Semiconductors > IGBT



Mfg. Part # Description Condition Price Buy
TOSHIBA
MG180V2YS40 		1700V - 180A - 1800W Isolated-Gate-Bipolar-Transistor (IGBT) Module, Silicon N-Channel half-bridge configuration for multiple-phase motor drive applications. From : Factory new 9pcs box - Manufactured in Japan. FN $339.00
FUJI ELECTRIC
2MBI75N060 		Transistors, IGBT. Dual 75A. 600V. http://www.fujisemiconductor.com/pdf/B0400502.pdf FN $79.50
FAIRCHILD
FSAM30SH60A 		SMART POWER MODULE 30Amp (SPM) 32 Pin SPM32-AA designed to provide very compact and high performance ac motor drives mainly targeting high speed low-power inverter driven applications. It combines optimized circuit protection and drive matched to low-loss IGBTs. Highly effective short-circuit current detection/ protection is realized through the use of advanced current sensing IGBT chips that allow continuous monitoring of the IGBTs current. System reliability is further enhanced by the built-in over-temperature monitoring and integrated undervoltage lock-out protection. FN $399.00
FUJI ELECTRIC
2MBI100L-060 		100A 600V 400W IGBT high speed switching - transistor module Factory new with hardware. 0.8/1.0uSec tON/OFF M218-package 210-grams FN $155.00
FUJI ELECTRIC
2MBI75J-120 		IGBT. 75Amp 1200V.  Half Bridge IGBT Power Module. Current Control Circuit 1 Circuit Per Package. V(BR)CES: 1.2kV.  V(BR)GES: 20V, I(C) Abs.75A. Absolute Max. Power Diss. 480W.  I(CES) Min. 1mA. I(GES) Max. 15uA.  V(CE)sat Max.2.2V. t(d)off Max. 950ns. t(f) Max. 200ns.  10 oz. NS $98.95
FAIRCHILD
HGT1N30N60A4D 		30A 600V IGBT MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. NOS $59.00
FUJI ELECTRIC
2MBI100N-120 		100A 1200V IGBT transistor module new. 2-Pack IGBT N series. Manuf in Japan NS $84.50
TOSHIBA
MG300J1US51 		IGBT 300Amp 600V Factory New No Hardware. FN $124.50
FAIRCHILD
HGTG27N120BN 		IGBT. Transistor. 1200V 72Amp. Power dissipation: 500 watt. Operating temperature range: -55 DegC to +150 DegC. Case: TO-247. NOS $4.48
FAIRCHILD
HGTG18N120BN AZ 		IGBT. Transistor. 1200V 54Amp. Power dissipation: 390 watt. Operating temperature range: -55 DegC to +150 DegC. Case: TO-247.  NS $6.95
PRX
CM15MD1-24H 		IGBT. CI Module three phase converter/Three phase inverter 15 Amperes 1200V.Used, small solder amount on four pins. RFE $37.50
FUJI ELECTRIC
7MBR30NE060 		Factory New 30Amp 600V High speed switching IGBT module , Pretty part. For inverter or motor drive. Manuf in the UK. NS $125.00
TOSHIBA
MG25N2CK1 		25AMP 1100V NEW MODULES NO HARDWARE Darlington Half Bridge Power Module NS $62.50
FAIRCHILD
ISL9V5036P3 		EcoSPARKTM 500mJ 360V N-Channel Ignition IGBT TO-220 NOS $17.50
TOSHIBA
MG50Q2YS40 		New N-Channel IGBT Transistor 50A 1200V 400W modul, High-speed Isolated-case FN $169.00
TOSHIBA
MG300M1UK1 		RFE IGBT 300Amp 1000V AR $85.00
PRX
CM400DY12H 		Dual IGBTMOD 400 Amperes/600 Volts USED MODULE AR $74.50
PRX
KD221K05 		Dual Darlington Transistor Module(50 Amperes / 1000 Volts) RFE/Used AR $27.50
TOSHIBA
MG400Q1US41 		400Amp 1200V Used/RFE IGBT Module N Channel High power switching for motor control applications. Guaranteed not DOA. Fair condition. AR $45.00
FAIRCHILD
FGB30N6S2 		600V SMPS II Series N-Channel IGBT TO-263/D2PAK Package (SMD TO-220/2 NO TAB) BULK NEW NS $4.00
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