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Siemens - MTT40M12N - SCR/silicon Controlled Rectifier, Doubler, Thyristor Module.

Status: Discontinued

Description: IGBT Thyristor Module

Voltae / Current Ratings: 1.2KV 48Amp.

Housing: T Module

Case: Module TO-240var.

Made in Germany

Note: Used / Removed from Equipment.

No hardware.

Alternate: Eupec  DD84N24K

 

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Transistor, IGBT. Dual 800Amp 600V. Package: Module. Note: Used/Removed from equipment. Extremely clean. Without hardware. A few may have a scratch or two, but look as if never used at all. On Sale. Learn More

Transistor, IGBT. 400Amp 1200V. Single module. Application: AC motor control. Motion/Servo control. Uninterruptible power supplies. Welding power supplies. Laser power supplies. Case: Module. With hardware. Learn More

Transistor, IGBT. 600Amp 1200V. Single module. Application: AC motor control. Motion/Servo control. Uninterruptible power supplies. Welding power supplies. Laser power supplies. Case: Module. Used/RFE/Removed from equipment. Learn More

INFINEON EUPEC - TT250N14KOF -  SCR, Silicon Controlled Rectifier.

Doubler 250Amp 1400V.

Case/Package: Module

Connections: Screw

Number of Pins: 7

Hold Current: 300 mA

Max Forward Surge Current (Ifsm): 7 kA

Operating Temperature: -40 °C to 125 °C

Max Repetitive Reverse Voltage (Vrrm): 1.4 kV

Output Current: 410 A

Reverse Voltage: 1.4 kV

Halogen Free: Not Halogen Free

Lead Free

Note: Used / Removed fronm Equipment

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INFINEON EUPEC - TT210N - TT210N12KOF - SCR, Silicon Controlled Rectifier.

Doubler 210Amp

Case/Package: Module

Mount: Screw

Weight: 160.000002 g

Hold Current: 300 mA

Max Forward Surge Current (Ifsm): 5.8 kA

Max Operating Temperature: 125 °C

Max Repetitive Reverse Voltage (Vrrm)  : 1.4 kV

Min Operating Temperature: -40 °C

Output Current : 10 A

Package Quantity: 3

Reverse Voltage (DC): 1.4 kV

Case: Module, Removed from Equipment.

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Eupec - FZ300R12KF2 - Transistor, IGBT.

Case: Module.

Mount: Panel.

Sub Category: Insulated Gate BIP Transistors

Configuration: SINGLE WITH BUILT-IN DIODE

Package Shape: RECTANGULAR

Package Style:FLANGE MOUNT Meter

Surface Mount: NO

Terminal Position: UPPER

Number of Elements: 1

Number of Terminals: 4

Package Body Material: PLASTIC/EPOXY

Polarity/Channel Type: N-CHANNEL

Gate-emitter Voltage-Max: 20 V

Operating Temperature-Max: 150 Cel

Collector Current-Max (IC): 300 A

Note: Used/Removed from equipment.

Sold As Is.

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AEG - TT162N1200KOC SCR, Silicon Controlled Rectifier.

Status: Discontinued

Dual Phase Control Thyristor Module, 2 Gates.

Voltage: 1200V.

Current: 260Amp.

Package: TP34, 34mm.

New Old Stock

Note: Hardware purchased separately.

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Transistor, N Channel IGBT. Max voltage: 1200V. Max current: 200Amp. Package: Module 2-109C1A. P/N: MG200Q2YS40. Note: Silicon. High Voltage. Used/Removed from equipment. No hardware. Learn More

Sanrex - TSR100AA60 - Triac, Single. 100Amp 600V. Isolated.

The TSR Series Triacs are designed for full wave AC control applications. They can be used as an On/Off function for phase control operations. Typical applications include copiers, microwave ovens, solid state switching, motor control, light control, and heater control.

Manufacturer: Sanrex-Sansha Electric Manufacturing

Product Series: TSR

Family Series: Sanrex-Sansha Electric Manufacturing Triacs, TSR Series

Package Type: TO-240AA

Vdrm (Volts): 600 Volts, Vrrm (Volts): 600 Volts

Idrm Peak (mA): 10 MilliAmps, Irrm Peak (mA): 10 MilliAmps

It (rms) Amps: 100 Amps

Itsm Amps: 1,200 Amps

I2T@60Hz (A2Sec): 6,000

Vtm (Volts): 1.45 Volts

dv/dt (V/microseconds): 50, di/dt (A/microseconds): 50

Igt (mA)   50 MilliAmps

Vgt (Volts): 3 Volts

Junction Temperature: 257

RoHS Compliant: Yes

Net Weight: 0.375 lbs

Package: TO-240 module.

Operating Temperature: 125 Deg C.

Sansha Electric Co Ltd.

Applications: Heater Control, Motor Control, Lighting Control

Made in Japan - Not a Chinese Copy.

Genuine Sanrex - Factory New Old Stock

UPC 0818497014895

No Hardware.

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Transistor, 2-Pack IGBT. N Series. Max voltage: 1200V. Max current: 50Amp. Package: Module. P/N: 2MBI50N-120. Note: High Voltage. Used/Removed from equipment. No hardware. Learn More

Toshiba - MG180V2YS40 Transistor, IGBT.

Insulated gate bipolar N-Channel.

Max voltage: 1700V.

Max current: 180Amp.

Dissipation: 1800 watt.

Package: Silicon module.

MG180V2YS40.

Application: half-bridge configuration for multiple-phase motor drive applications.

From: Manufactures box of 9.

Manufactured in Japan.

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Transistor, IGBT Mosfet. Max voltage: 1000V (1KV). Max current: 50Amp. Dissipation: 160 watt. Package: ISOTOP. P/N: STE50DE100. Note: RDS On: 0.026 Ohm. Note: Hybrid emitter switched bipolar transistor. Learn More

ST Microelectronics - STGF7NC60HD Transistor, N Channel.

Max voltage: 600V.

Max current: 6Amp.

Dissipation: 25 watt.

Package: TO-220FP (plastic tab). 

Note: Very fast PowerMesh IGBT.

High Voltage.

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Toshiba - TSS16J41S - Relay, Solid Stat Relay, SSR.

Onstate Current: 16 Amp, 600V.

Zero Cross Type.

Operting Temperature: -30 C to 80 C 

Isolation Voltage: 2060 V

Control Current in: 20mA minimum.

Control Voltage in: 6VDC minimum.

Mount: Panel.

No hardware - Old Stock.

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Microsemi - APTGF75DA120T1G Transistor, IGBT.

Status: Discontinued

Max voltage: 1200V.

Max current: 75Amp. (100Amp 25 Deg C).

Dissipation: 500 Watt. Package: 12 Pin module.

Package: SP1

Operating temperature: 80 Deg C.

Application: AC and DC motor control.

Switched mode power supplies.

Power Factor Correction.

Marked: APTGF75DA120T1G - 9464 - 1050.

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International Rectifier - IR - IRKE270-08 Diode.

VSK series of MAGN-A-PAKs use high voltage power diodes in two basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges and the single diode module can be used in conjunction with the thyristor modules as a freewheel diode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.).

Status: Discontinued

Current Rating: 270 A

Forward Voltage: 1.48 V

Output Current: 270 A

Voltage Rating (DC): 800 V

MagnaPak. Standard Recovery.

Case: Electrically Isolated Base Plate, Module.

New Old Stock.

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GOULD INSTRUMENTS - CL-212103 - Gordos 9203700 - Puse Width Modulation Amplifier Module.

Note: Amplifier Module without Gould Heat Sink is Gordos P/N 9203700

Hybrid MOSFET Switching Module for Medium Sized Pulse-Width Modulated Amplifiers.

H-Bridge Output Stage- PWM and ENABLE inputs.

Minimum Load Resistance: 10 ohms.

Power Requirements: +/-15 VDC at 3 Amperes.

Physically Polarized 7-pin Encapsulated Package with Integral Black Anodized Heat Sink.

1.4" by 2" by 0.5" with PCB-style mounting pins.

Note: Power Unit with Gould Instruments Heat Sink bonded to unit.

Overall Dimensions: 2" x 1.4" x 0.4" Above Board

Gordos 9203700 Amplifer contains Eight IRFD1Z3 N-Channel Power Field Effect Transistors. 

Internal Module Schematic in Attached pictures.

New Old Stock - Made in USA

 

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Transistor, IGBT. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. No hardware. Learn More

FUJI ELECTRIC - 6RI75E-060 - 75Amp 600V Power Diode Module

Status: Discontinued

Repettitive Peak Reverse Voltage 60V, Non-repetitive Peak Reverse Voltage 660 V

Average output current: 75 A

Surge current: 1000 A

Features: Glass Passivation Chip, Easy Connection, Insulated Type

Applictions: Inverters, Battery Chargers, DC Motors, General Purpose DC Power Supplies
Maximum

Used, Removed From Equipment

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FUJI ELECTRIC - 6RI75E-060 - 75Amp 600V Power Diode Module

Status: Discontinued

Repettitive Peak Reverse Voltage 60V, Non-repetitive Peak Reverse Voltage 660 V

Average output current: 75 A

Surge current: 1000 A

Features: Glass Passivation Chip, Easy Connection, Insulated Type

Applictions: Inverters, Battery Chargers, DC Motors, General Purpose DC Power Supplies
Maximum

Factory New  - No hardware.

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OnSemiconductor Fairchild  - HGT1N30N60A4D - Transistor, IGBT.

30A 600V MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Status: Discontinued

Manufacturer: Onsemiconductor /Fairchild         

Product Category: Motor / Motion / Ignition Controllers & Drivers            

Operating Temperature: - 55 C to + 150 C             

Mounting Style: SMD/SMT          

Package / Case: SOT-227-4          

Dimensions: Height: 9.6 mm, Length: 38.2 mm

Series: SPM 3    

Width: 25.04 mm            

Pd - Power Dissipation: 225 W   

Product Type: Motor / Motion / Ignition Controllers & Drivers    

Part # Aliases: HGT1N30N60A4D_NL       

Unit Weight: 1.058219 oz

 

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Smart power module. 30Amp 600V 3-Phase inverter bridge including control IC's for gate driving and protection. Power: 2.4Kw / 100~253 VAC. Switching frequency:15kHz. Case: 32 Pin. SPM32-AA designed to provide very compact and high performance ac motor drives mainly targeting high speed low-power inverter driven applications. It combines optimized circuit protection and drive matched to low-loss IGBTs. Highly effective short-circuit current detection/ protection is realized through the use of advanced current sensing IGBT chips that allow continuous monitoring of the IGBTs current. System reliability is further enhanced by the built-in over-temperature monitoring and integrated under-voltage lock-out protection. Learn More