IGBT
- ASTEC - AA05A-024L-150S - Power Supply. In: 9-36V. Out: 15V 5W.
ASTEC - AA05A-024L-150S - Power Supply.
Input: 9-36V.
Output: 15V 5 watt.
Isolated Output.
Shielded.
Mount: PCB.
Operating Temp: -25 C to 71 C
Dimensions: 2" x 1" x 0.4" High, 4 leads.
Listed: UL.
Note: Double marked QA13-030-18 and MAS4030-8.
Learn More - Vishay - VS-T40HF10 - Diode Module, 100V, 40A, 2-Pin D-55, Factory NewOut of stock
Vishay - VS-T40HF10 - Diode Module, 100V, 40A, 2-Pin D-55
These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built.
Mounting Style: Screw Mount
Package / Case: D-55
Vr - Reverse Voltage: 100 V
If - Forward Current: 40 A
Type: Standard Recovery Rectifiers
Configuration: Single
Vf - Forward Voltage: 1.3 V
Max Surge Current: 600 A
Ir - Reverse Current: 100 uA
Operating Temperature: - 40 C to 150 C
Dimensions: Height: 25 mm, Length: 41 mm, Width: 27 mm
Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification.
Unit Weight: 2 oz
Factory New
- TDK Lambda - L-35-0V-5 - Overvoltage Protector Module, IGBTSpecial Price $22.98 Regular Price $28.50
TDK Lambda - L-35-0V-5 - Overvoltage Protector Module, IGBT.
Overvoltage Protection
Range: 6.6V =/-0.2V
Package: Module.
Made in Japan
Typical Applications: Overvoltage Protection used in expensive Voltage Regulated Power Supplies, Standard for 5VDc Power Supplies
NSN 6130-01-115-0946
- Motorola - 1N1183R - Diode. 40Amp 50V.IN STOCK - MORE THAN 100 READY TO SHIP!
Motorola - 1N1183R Diode. 40Amp 50V.
Package: DO-5 stud.
Note: Silicon.
Reverse polarity, anode case.
Maximum Ratings:
Average forward current IF(AV): 40 Amps
Maximum surge current IFSM: 800 Amps
Maximum I2t for fusing I2t: 2600 A2s
Maximum peak forward voltage VFM: 1.19 Volts
Maximum peak reverse current IRM: 10 µA
Maximum peak reverse current IRM: 2.0 mA
Maximum thermal resistance RθJC: 1.25°C/W
Maximum recommended operating frequency: 10 kHz
Storage temperature range Tstg: -65 to +200°C
Operating junction temperature range TJ: -65 to +200°C
Alternate: ECG5941
New Old Stock - Some oxidation on bulk packaged components (Cosmetic and does not affect operation).
- ERICSSON - PKG4410PI - DC/DC 3.3VDC 14A OUT,38-72V-IN 3"X2.5"READY TO SHIP - ONLY 50 LEFT IN STOCK!
ERICSSON - PKG4410P - DC/DC Convertor
The PKG units can be used as on-board distributed power modules, or serve as building blocks for more centralized power boards. The high efficiency makes it possible to operate over a wide temperature range without any extra heatsinks. At forced convection cooling >200 lfm (1 m/s), the PKG units can deliver full power without heatsinks up to +65°C ambient. With derated output power it can also operate in temperature controlled environments with non-forced convection cooling. By adding external heatsinking, the temperature range can be extended even further. Thanks to its peak power capability, the PKG series is ideal for applications where max power is only required during short durations e.g. in disc drives. The PKG series uses ceramic substrates with plated copper in order to achieve good thermal management, low voltage drops, and a high efficiency.
Input Voltage: 38-72VDC
Output Voltage: 3.3VDC @ 13.6Amps
45W Output.
Efficiency typ 86% (5 V) at full load
1500 V dc isolation voltage
Terminal Type: PCB
MTBF >200 years at +75 °C casetemperature
Rugged mechanical design andefficient thermal management, max+100 °C case temperature
EMI measured according toEN 55 022 and FCC part 15J
Dimensions: Size 74.7x63.5x11.0 mm (2.94x2.50x0.433 in.
Made in Sweden
Learn More - Toshiba - MG25J1BS11 - Transistor, IGBT. 25A, 600V, N-Channel.
Toshiba - MG25J1BS11 Transistor, IGBT.
Status: Discontinued
Max voltage: 600V (.6KV).
Max current: 25Amp.
Package: Module with Hardware.
Made in Japan
New Old Stock
- Powerex. - KS621K30 - IGBT. Voltage: 1,000V. Current: 300Amp. Used.Special Price $46.98 Regular Price $89.99IGBT. Voltage: 1,000V. Current: 300Amp. Package: Module, Used/Removed from equipment. Note. Darlington. No hardware. Learn More
- MATSUSHITA - M57962B - 12-CERAMIC SIP IGBT DRIVERSpecial Price $21.95 Regular Price $29.00READY TO SHIP - ONLY 31 LEFT IN STOCK!
- IXYS - IXGT30N60B - Transistor, IGBT, HiPer Fast.Special Price $4.98 Regular Price $5.95IXYS - IXGT30N60B - Transistor, IGBT, HiPer Fast. Status: Discontinued Transistor, IGBT, HiPerFast. Max voltage: 600V. Max current: 70Amp. Package: TO-268 SMD. Operating temperature: -55 to 150 Deg C. Application: PFC circuits, UPS, AC motor control, DC servo and robot drives and DC choppers. Note: Optimized for 10-25 KHz hard switching and up to 150KHZ resonant switching. Learn More
- IR - G4BC30KD - Transistor, IGBT. 600V, 16A, TO-220
IR - G4BC30KD Transistor, IGBT.
Status: Discontinued
Insulated gate bipolar.
Max voltage: 600V.
Max current: 16Amp.
8-25 KHz
Package: TO-220.
Note: Ultra-fast soft recovery diode.
Genuine International Rectifier - New Old Stock - Difficult Transistor/IGBT to Find
Learn More - International Rectifier - IRG4BC20UD - Transistor, IGBT. 600V, 13ASpecial Price $4.98 Regular Price $6.00
International Rectifier - IRG4BC20UD - Transistor, IGBT.
Max voltage: 600V.
Max current: 13Amp @ 25 Deg C, continuous.
Dissipation: 60W @ 25 Deg C, 24W @ 100 Deg C.
Package: TO-220.
Operating temperature: -55 to 150 Deg C.
Note: Ultra-Fast soft recovery.
Insulated gate bipolar transistor.
Learn More - International Rectifier IR - IRGPC40U - TO-247 IGBT NEW
International Rectifier IR - IRGPC40U
INSULATED GATE BIPOLAR TRANSISTOR
Product Category: IGBT Modules
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Continuous Collector Current at 25 C: 40 A
Package / Case: TO-247AC-3
Operating Temperature: - 55 C to + 150 C
Height: 20.7 mm
Length: 15.87 mm
Width: 5.31 mm
Brand: Infineon / IR
Mounting Style: Through Hole
Maximum Gate Emitter Voltage: 20 V
Learn More - OnSemiconductor FAIRCHILD - FGB30N6S2 - NEW IGBT
OnSemiconductor FAIRCHILD - FGB30N6S2 - 600V SMPS II Series N-Channel IGBT TO-263/D2PAK
Status: Discontinued
Collector Emitter Breakdown Voltage: 600 V
Collector Emitter Saturation Voltage: 2 V
Collector Emitter Voltage (VCEO): 600 V
Current Rating: 45 A
Element Configuration: Single
Max Collector Current: 45 A
Operating Temperature: -55 °C to 150 °C
Max Power Dissipation: 167 W
Min Operating Temperature
Power Dissipation: 167 W
Rise Time: 10 ns
Voltage Rating (DC): 600 V
Package (SMD TO-220/2 NO TAB)
BULK NEW
Learn More - FAIRCHILD - FGB20N6S2 - Transistor, IGBT N Channel. P/N: FGB20N6S2.$1.99Transistor, IGBT N Channel. Max voltage: 600Vces. Max current: 28 Amp @ 25 Deg C, 13 Amp @ 110 Deg C. Dissipation: 125 watt. Package: TO-263/D2PAK . P/N: FGB20N6S2. Note: Series: SMPS II. Operating temperature: -55 to 150 Deg C. Learn More
- Lambda - L-20-OV-20 - Overvoltage Protector. 20V.READY TO SHIP - ONLY 98 LEFT IN STOCK!
Lambda - L-20-OV-20 - Overvoltage Protector.
The L-20-OV Series of Overvoltage Protectors are hybrid devices designed to prevent damage to a load caused by excessive power supply output voltage. Load protection is accomplished by effectively short circuiting the output terminals of the power supply when the trip point is exceeded. The L-20-OV is reset when s power to the overvoltage protector is interrupted and its case temperature has fallen below 71°C. An external heatsink is required to maintain case temperature below rated limit.
The L-20-OV Series is available for nominal supply voltages from 5 to 30 volts. The trip point voltage is fixed and cannot be adjusted. This two terminal device is available in a hybrid with an isolated flange.
20V, Trip 22.8V +/- 0.7V
On State Current; 20 A
On State Voltage: 1.75V
Non Repetitive Peak Surge Current: 260A
Standby Current: 30 mA
Mount: PCB.
New Old Stock - Difficult to Find.
Learn More - IXYS - IXGM30N50A - Transistor, MOSIGBT. P/N: IXGM30N50A.$25.99Transistor, MOSIGBT. Max voltage: 500V. Max current: 30Amp. Dissipation: 200 Watt. Package: TO-3 (TO-204). P/N: IXGM30N50A. Note: Time: 800ns. Learn More
- FAIRCHILD - ISL9V5036P3 - Transistor, IGBT. N-Channel ignition. EcoSPARK.Special Price $2.95 Regular Price $17.50Out of stockTransistor, IGBT. N-Channel ignition. EcoSPARK TM 500mJ, 360V. Voltage: 390 BVcer, 24 BV ces. Collector current continuous at 25 Deg: 46 Amp. Collector current continuous at 110 Deg: 31 Amp. Dissipation: 250 watt. Package: TO-220. Applications: For use in automotive ignition circuits, specifically as coil drivers. Learn More
- Toshiba - TSS16J41S - Relay, SSR. 16 Amp 600V.Special Price $18.98 Regular Price $22.50
Toshiba - TSS16J41S - Relay, Solid Stat Relay, SSR.
Onstate Current: 16 Amp, 600V.
Zero Cross Type.
Operting Temperature: -30 C to 80 C
Isolation Voltage: 2060 V
Control Current in: 20mA minimum.
Control Voltage in: 6VDC minimum.
Mount: Panel.
No hardware - Old Stock.
Learn More - GOULD INSTRUMENTS - CL-212103 - Gordos 9203700 - Hybrid MOSFET Output Amplifier Module.IN STOCK - MORE THAN 500 READY TO SHIP!
GOULD INSTRUMENTS - CL-212103 - Gordos 9203700 - Puse Width Modulation Amplifier Module.
Note: Amplifier Module without Gould Heat Sink is Gordos P/N 9203700
Hybrid MOSFET Switching Module for Medium Sized Pulse-Width Modulated Amplifiers.
H-Bridge Output Stage- PWM and ENABLE inputs.
Minimum Load Resistance: 10 ohms.
Power Requirements: +/-15 VDC at 3 Amperes.
Physically Polarized 7-pin Encapsulated Package with Integral Black Anodized Heat Sink.
1.4" by 2" by 0.5" with PCB-style mounting pins.
Note: Power Unit with Gould Instruments Heat Sink bonded to unit.
Overall Dimensions: 2" x 1.4" x 0.4" Above Board
Gordos 9203700 Amplifer contains Eight IRFD1Z3 N-Channel Power Field Effect Transistors.
Each IRFD1Z3 N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuitsInternal Module Schematic in Attached pictures.
New Old Stock - Made in USA
- OnSemiconductor Fairchild - HGT1N30N60A4D - Transistor, IGBT. 30A 600VSpecial Price $18.98 Regular Price $24.50
OnSemiconductor Fairchild - HGT1N30N60A4D - Transistor, IGBT.
30A 600V MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Status: Discontinued
Manufacturer: Onsemiconductor /Fairchild
Product Category: Motor / Motion / Ignition Controllers & Drivers
Operating Temperature: - 55 C to + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-227-4
Dimensions: Height: 9.6 mm, Length: 38.2 mm
Series: SPM 3
Width: 25.04 mm
Pd - Power Dissipation: 225 W
Product Type: Motor / Motion / Ignition Controllers & Drivers
Part # Aliases: HGT1N30N60A4D_NL
Unit Weight: 1.058219 oz
- FAIRCHILD - FSAM30SH60A - Smart power module. Power supply IGBT.$47.00 As low as $39.00Out of stockSmart power module. 30Amp 600V 3-Phase inverter bridge including control IC's for gate driving and protection. Power: 2.4Kw / 100~253 VAC. Switching frequency:15kHz. Case: 32 Pin. SPM32-AA designed to provide very compact and high performance ac motor drives mainly targeting high speed low-power inverter driven applications. It combines optimized circuit protection and drive matched to low-loss IGBTs. Highly effective short-circuit current detection/ protection is realized through the use of advanced current sensing IGBT chips that allow continuous monitoring of the IGBTs current. System reliability is further enhanced by the built-in over-temperature monitoring and integrated under-voltage lock-out protection. Learn More
- ST Microelectronics - STE50DE100 - Transistor, IGBT Mosfet. 1000V 50Amp 160W.$30.00READY TO SHIP - ONLY 4 LEFT IN STOCK!Transistor, IGBT Mosfet. Max voltage: 1000V (1KV). Max current: 50Amp. Dissipation: 160 watt. Package: ISOTOP. P/N: STE50DE100. Note: RDS On: 0.026 Ohm. Note: Hybrid emitter switched bipolar transistor. Learn More
- ST Microelectronics - STGF7NC60HD - Transistor, N Channel. 600V 6Amp 25W. IGBT.IN STOCK - MORE THAN 100 READY TO SHIP!
ST Microelectronics - STGF7NC60HD Transistor, N Channel.
Max voltage: 600V.
Max current: 6Amp.
Dissipation: 25 watt.
Package: TO-220FP (plastic tab).
Note: Very fast PowerMesh IGBT.
High Voltage.
Learn More - Siemens - MTT40M12N - SCR, Doubler. 1.2KV 48Amp. IGBT, Thyristor Module, Used.Special Price $48.98 Regular Price $84.95READY TO SHIP - ONLY 4 LEFT IN STOCK!
Siemens - MTT40M12N - SCR/silicon Controlled Rectifier, Doubler, Thyristor Module.
Status: Discontinued
Description: IGBT Thyristor Module
Voltae / Current Ratings: 1.2KV 48Amp.
Housing: T Module
Case: Module TO-240var.
Made in Germany
Note: Used / Removed from Equipment.
No hardware.
Alternate: Eupec DD84N24K