Memory

IC, memory. EE CMOS (Zero power) versatile PAL device. Package: 28 PLCC SMD. Used/Removed from equipment. Learn More

IC, memory. 32768 x 8 Bit. Programmable read only memory. Package 28 Cdip. Used/Removed from equipment. Note: UV Erasable. Learn More

IC, memory. DRAM 512 refresh cycle/8ms. Package: 19 Pin SIP, staggered leads. Learn More

Texas Instruments - TMS4416-15NL IC, Memory.

High Performance NMOS DRAM, 16,384 word by 4 Bit.

Discontinued - New Old Stock - Genuine Texas Instruments

Package: 18 Pin DIP.

Package of 21, one new full manufactures tube.

Functionally Equivalent to following discontinued  TI Memory chips:

SMJ4416-20JDL, SMJ4416-20JDS, SMJ4416-15JDE, SMJ4416-15JDL, SMJ4416-12JDE, SMJ4416-20JDE, TMS4416-20NL, SMJ4416-15JDS, SMJ4416-12JDL, TMS4416-12NL, SMJ4416-12JDS

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SYNERTEK - SY2128L-4 - IC, Memory. SRAM 2048 x 8, 200nS, MOS PDIP24.

SY2128-3 is a 16,384 bit static random access memory organized, 2048 words by eight bits and is fabricated using Synertek's new scaled n-channel silicon gate technology.

200ns operating current 100ma standby current 20mA.

Package: 24 PDIP.

General Purpose Static Ram where applications include use in Video Arcades.

SYNERTEK is a subsidiary HONEYWELL

Used/Perfect Socket Pulls.

(Check your data sheets for more specifics, The -4 version is faster than SY2128L-1, -2, -3). 

Alternates, Substitutions, Replacements:

Hitachi HM6116, HM6116L, Fujitsu MB8416A, NEC uPD446, Mitsubishi 5M5517, M58725, Mostek MK4802, Motorola MCM4016, MCM65116, Texas Instruments TMS4016, Toshiba TC5517, TMM2016, OKI MSM5128, MSM2128, Sony CXK5816, Sieko/Epson SRM2016, Sharp LH5116  

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IC. Interface, 135 character row buffer memory for CRT or printer. Case: 28 Dip. Note: Socket pulls. Used/Removed from equipment. Learn More

IC, memory. 1Megabit (128K x 8 Bit) CMOS, single 5.0V only, ultra-fast sectored flash memory. Access time: 45ns. NexFlash. Package: 32 Dip.

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IC, memory. Programmable logic array, series 24. Case: 24 Dip. Learn More

IC, memory. 512 x 4-Bit Programmable read only memory. Package: 16 Dip. New. Learn More

IC, memory. 1 Megabit CMOS boot block flash memory. High speed 128K x 8 Bit electrically erasable and reprogrammable. Case: 32 PLCC SMD, Used/programmed, perfect socket pulls. (Label: 755717-425 U22 Program No. 93919-063 REV9).

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IC, memory. Multiport DRAM 266,144 Words x 4 Bit. Silicon gate CMOS. Package: 28 Dip. Used/Removed from equipment. Learn More

IC, memory. SRAM 1024 Word x 4 Bit, 200ns, 550mW. Package: 18 Dip. Used/Removed from equipment. Learn More

IC, memory. 32768 x 8 Bit. Programmable read only memory. Package 28 Cdip. Used/Removed from equipment. Note: UV Erasable. Learn More

IC, memory. Static RAM. Case: 20-dip, tarnishing. Learn More

IC, memory. 32768 x 8 Bit. Programmable read only memory. Package 28 Cdip. Used/Removed from equipment. Note: UV Erasable. Learn More

IC, memory. Multiport DRAM 266,144 Words x 4 Bit. Silicon gate CMOS. Package: 28 Dip. Used/Removed from equipment. Learn More

IC, memory. 32768 x 8 Bit. Programmable read only memory. Package 28 Cdip. Used/Removed from equipment. Note: UV Erasable. Learn More

IC, memory. 32768 x 8 Bit. Programmable read only memory. Package 28 Cdip. Used/Removed from equipment. Note: UV Erasable. Learn More

IC, memory. 32768 x 8 Bit. Programmable read only memory. Package 28 Cdip. Used/Removed from equipment. Note: UV Erasable. Learn More

IC, memory. 32768 x 8 Bit. Programmable read only memory. Package 28 Cdip. Used/Removed from equipment. Note: UV Erasable. Learn More

IC, memory. SRAM, DRAM, Video RAM. Package: 16 Dip. Learn More

Dynamic RAM - With separate RAS/CAS pins, Number of Words=16k,Bits Per Word=1, t(acc) Max. (S)=200n, tW Min (S)=375n, Output Config=3-State,P(D) Max.(W) Power Dissipation=462m, Nom. Supp (V)=12, 16-dip BULK. Learn More

IC, memory. NMOS SRAM 1024-Bit (1024 x 1). Package: 16 Cdip. Learn More

IC, memory. SRAM 4K x 1. Package: 18 Dip. Socket pulls. Used/Removed from equipment. Learn More