Transistors
- Vishay Siliconix - SI9400DY - Si9400DY - Transistor, P Channel MOSFET. 20V. SOIC, 8 SMD$2.98 As low as $1.98Out of stock
Vishay Siliconix - SI9400DY - Si9400DY - Transistor, P Channel MOSFET.
Max voltage: 20V(D-S).
Continuous drain current: 2.5A @ 25 Deg C, 2.0Amp @ 70 Deg C.
Dissipation: 2.5 watt @ 25 Deg C, 1.6 watt @ 70 Deg C.
Package: SOIC 8 SMD.
Operating Temperature: -55 to 150 Deg C.
Learn More - Siliconix - VN88AF - Transistor, N Channel DS Mosfet.$9.00Transistor, N Channel DS Mosfet. Max voltage: 80V. Package: TO-202AA. Note: 4 Ohm. Learn More
- SGS-Thompson - M652 7698 1570651 - Transistors, NPN. Darlington.$0.23Transistors, NPN. Darlington. Case: TO-220/3 preformed leads. Learn More
- SANYO - 2SC3038 - Transistor, NPN. P/N: 2SC3038.
SANYO - 2SC3038 - Transistor, NPN.
Max Voltage: 400VCEO, 500VCBO.
Max Current: 4 Amp.
Dissipation: 40 watt.
Package: TO-220.
Application: For Switching Regulators.
Note: Silicon, Triple Ddiffused Planar.
Genuine Vintage Sanyo - New Old Stock - Rare
Alternate: NTE51, SK9452
Learn More - RCA - 2N6546 - Transistor, NPN. P/N: 2N6546.Special Price $17.50 Regular Price $20.00Transistor, NPN. Max voltage: 300VCEO, 600VCEX. Max current: 15 Amp. Dissipation: 175 watt. Package: TO-3 (TO-204AA) steel. P/N: 2N6546. Operating temperature: -65 to 200 Deg C. Note: Silicon. High Voltage. Learn More
- RCA - 2N3235 HOUSE - HOUSE#61998 TO-3 STEEL NPN 117W modifiedSpecial Price $2.96 Regular Price $3.95HOUSE#61998 TO-3 STEEL NPN 117W modified with crimped leads on bottom two terminals - won't plug into socket, must be soldered to Learn More
- Raytheon - 2N2270 - Transistor. Silicon NPN. TO-5 Gold LeadsIN STOCK - MORE THAN 1,000 READY TO SHIP!
Raytheon - 2N2270 - Transistor. Silicon NPN.
Status: Discontinued
5W 1A 60V.
High Speed Planar Power Transistor.
Mounted in a Hermetically Sealed Package
TO-5 Long Gold Leads.
NSN 5961-00-890-9768
Genuine Vintage Raytheon
Alternate: Rockwell Collins 352-0430-000, National Semiconductor NS2915, ECG128, SK3024
Test Dotted
Learn More - NEC Corporation - NE70083 - Transistor, microwave 80GHz. P/N: NE70083.$14.99Transistor, microwave 80GHz. Package: 4-pin Outline 83. P/N: NE70083. Note: Low noise Ku-K band GaAs MESFET. RED DOT =2SK353. Learn More
- Motorola - MJ2500 - Transistor, PNP. 60V, 10A, 150W. TO-3 SteelIN STOCK - MORE THAN 500 READY TO SHIP!
Motorola - MJ2500 Transistor, PNP.
Max voltage: 60V.
Max current: 10Amp.
Dissipation: 150 watt.
Package: TO-3 steel.
Application: GP amplifier.
Medium power complementary silicon darlington.
Learn More - Motorola - MJ13333 - Transistor, NPN. 400 V, 175 W, 20 A, TO-3 Steel, Used/As RemovedREADY TO SHIP - ONLY 20 LEFT IN STOCK!
Motorola - MJ13333 - Transistor, NPN
The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as; Switching Regulators, Inverters, Solenoid and Relay Drivers, Motor Controls, and Deflection Circuits.
Type Designator: MJ13333, Material: Si Switchmode, Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): -65 C to 200 °C
Collector Capacitance (Cc): 500 pF
Package: TO-3 Steel
Used/As Removed From Equipment
Difficult to find Vintage Genuine Motorola Power Transistor.
Learn More - Motorola - JAN2N6365 - Transistor, PNP. Germanium 30v TO-18. Gold Leads, 5961-01-017-0381IN STOCK - MORE THAN 500 READY TO SHIP!
Motorola - JAN2N6365 Transistor, PNP. 5961-01-017-0381
Germanium 30v collector to base emitter open and 25 collector to emitter with base short circuited to emitter100.00 max coll current DC 150.0 max total power dissipation. TO-18 gold leads metal can, hermetically sealed.
Made in the USA.
Military NSN 5961-01-017-0381.
MRC Parameter Characteristics
ABBH Inclosure Material Metal
ABHP Overall Length 0.170 inches minimum and 0.210 inches maximum
ABJT Terminal Length 0.500 inches minimum and 0.750 inches maximum
ADAV Overall Diameter 0.209 inches minimum and 0.230 inches maximum
ALAS Internal Configuration Junction contact
ALBA Electrode Internally-Electrically Connected to Case Collector
ASCQ Internal Junction Configuration PNP
AXGY Mounting Method Terminal
AYQS Terminal Circle Diameter 0.100 inches nominal
CBBL Features Provided Hermetically sealed case
CTMZ III Semiconductor Material Germanium
CTQN Voltage Rating in Volts per Characteristic 30.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter
CTQX Current Rating per Characteristic 100.00 milliamperes source cutoff current maximum
CTRD Power Rating per Characteristic 150.0 milliwatts small-signal input power, common-collector preset
TEST Test Data Document 81349-MIL-S-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "nominal", etc.).
TTQY Terminal Type and Quantity 3 uninsulated wire lead
ZZZK Specification/Standard Data 81349-MIL-S-19500/471 government specification
- Motorola - JAN2N3792 - Transistor, PNP. P/N: JAN2N3792. New.$20.00Transistor, PNP. Voltage: 80V. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3. Note: Silicon. Military NSN 5961-00-1364-4162. Learn More
- Motorola - 2N6547 - Transistor, NPN. P/N: 2N6547.$13.00Out of stockTransistor, NPN. Max voltage: 400VCEO, 450VCEX, 850VCEV. Max current: 15 Amp. Dissipation: 175 watt. Package: TO-3 (TO-204AA) steel. P/N: 2N6547. Operating temperature: -65 to 200 Deg C. Note: Silicon, switchmode series. High Voltage. Learn More
- Motorola - JANTX2N6058 - Bipolar Transistor, NPN Darlington, 80v 12A, TO-3, 150WREADY TO SHIP - ONLY 64 LEFT IN STOCK!
Motorola - JANTX2N6058 Transistor, NPN Darlington.
Categories Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/502
Packaging Bulk
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 12A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 3V @ 120mA, 12A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 6A, 3V
Power - Max 150W
Frequency - Transition -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Military NSN 5961-010689520.
Learn More - Motorola - JAN2N3442 - Transistor, NPN. BJT, 140V, 10A, TO-3IN STOCK - MORE THAN 100 READY TO SHIP!
Motorola - JAN2N3442 Transistor, NPN.
Max voltage: 140VCEO, 160VCBO.
Max current: 10 Amp.
Dissipation: 117 watt.
Package: TO-3.
Operating temperature: -65 to 200 Deg C.
Note: Silicon.
Learn More - Motorola - 2002 HOUSE - Transistor, PNP. Messanger output.Special Price $3.71 Regular Price $4.95Transistor, PNP. Messenger output. CB-Radio. House numbered: 2002. Package: TO-3. Note: Germanium. Learn More
- Motorola - 2N5876 - Transistor, PNP. 10 Amp, 80V, 150WSpecial Price $9.98 Regular Price $12.00Out of stock
Motorola - 2N5876 Transistor, PNP.
Max Voltage: 80V.
Collector current continuous: 10Amp.
Dissipation: 150 watt.
Operating/storage temperature: -65 to 200 Deg C.
Package: TO-3.
Note: Silicon high power.
Application: power amplifier and switching applications.
Form Fit & Function replacement: 2N5875
Functional Equivalents: ECG285, 2N5875, 2N6489, 2N5885, 2N5886
- Motorola - 2N4900 - Transistor, PNP. P/N: 2N4900.$3.00Transistor, PNP. Max voltage: 80V. Max current: 1Amp. Dissipation: 25 watt. Package: TO-66. P/N: 2N4900. Learn More
- Linear Integrated Systems - LS313 - Transistor, NPN Dual. Very High Gain >200, TO-78 Gold Leads (TO-99-6).
Linear Integrated Systems - LS313 Transistor, NPN Dual.
Max voltage: 45V.
Max current: 10ma.
Dissipation: 250mW each.
Package: TO-78 Gold Leads (TO-99-6).
Very High Gain >200. Operating junction temperature 150 Deg C.
NSN: 5961-01-317-1936
Learn More - KEC - KN2907 - Transistor, PNP. Epitaxial Planar, TO-92, Package of 10.IN STOCK - MORE THAN 1,000 READY TO SHIP!
KEC (Korea Electronics Corp.) - KN2907 Transistor, PNP.
Max voltage: 40VCEO, 60VCBO.
Max current: 600mA.
Dissipation: 625mW.
Package: TO-92.
Operating Temperature: -55 to 150 Deg C.
Note: Epitaxial Planar.
Genuine KEC - New Old Stock
Alternates: 2N2907, MPS2907, NTE159
Package of 10.
Learn More - IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247ADIN STOCK - MORE THAN 100 READY TO SHIP!
IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247AD
Current Rating: 20 A
Drain to Source Breakdown Voltage: 600 V
Drain to Source Resistance: 350 mΩ
Drain to Source Voltage (Vdss): 600 V
Fall Time: 40 ns
Gate to Source Voltage (Vgs): 20 V
Input Capacitance: 4.5 nF
Operating Temperature: -55 °C to 150 °C
Max Power Dissipation: 300 W
Power Dissipation: 300 W
Rds On Max: 350 mΩ Resistance: 350 mΩ
Rise Time: 43 ns
Turn-Off Delay Time: 70 ns
Voltage Rating (DC): 600 V
RoHS Compliant
Package: TO-247AD.
Accessories: Fischer Elektronik - FK 243 MI 247 H, Fischer Elektronik - FK 243 MI 247 O, Fischer Elektronik - SK 145/25 STS-220, Fischer Elektronik - WLK 5
Learn More - IR - JANTXV2N6766 - Transistor, N-CH Mosfet. 200V, 30A, 150WSpecial Price $28.98 Regular Price $48.50
IR - JANTXV2N6766 - Transistor, N-CH Mosfet.
Max voltage: 200V.
Max current: 30Amp.
Dissipation: 150 watt.
Package: TO-3.
Derate >25 degC: -55 to 150 Deg C.
Military/Aerospace
- General Electric - D44R2 - High Voltage Power Transistor, NPN, TO-220 Gold Leads.
General Electric - D44R2 - High Voltage Power Transistor, NPN.
Type Designator: D44R2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 31 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Max Frequency: 40 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO-220 Red power tab, Pkg.229, Gold Leads.
Genuine Vintage General Electric - New Old Stock
Made in USA
Alternate/Replaces: ECG198, SK3219, D44R1
NSN 5961-01-005-8801
- FUJI ELECTRIC - 2MBI200J-060 - Transistor, IGBT. P/N: 2MBI200J-060.$149.00Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 200Amp. Package: Module (2-pack). P/N: 2MBI200J-060. Application: High power switching. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More