HITACHI - 2SC1942 Transistor, NPN.

Voltage: 800VCEO, 1500VCBO.

Current: 3 Amp.

Dissipation: 50 watt.

Operating temperature: -45 to 150 Deg C.

Package: Hermetically Sealed Heavy TO-3 steel.

Note: High power switching TV horizontal deflection output.

Silicon triple diffused. High Voltage.

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FAIRCHILD - 2N3137 Transistor, NPN.

Voltage. 20VCEO, 40VBCO.

Current: 150mA.

Dissipation: 0.8 watt.

Power Gain: 250Mhz.

Package: TO-5.

Note: Silicon.

P/N: House numbered 115329-2.

Package of 10.

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2N4125 HOUSE -Transistors, PNP.

Ratings: 30V 200ma amplifier.

House Marked 183-1.

Case: TO-92.

Package of 25.

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Motorola - MJ13333 - Transistor, NPN

The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as; Switching Regulators, Inverters, Solenoid and Relay Drivers, Motor Controls, and Deflection Circuits.

Type Designator: MJ13333, Material: Si Switchmode, Polarity: NPN

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): -65 C to 200 °C

Collector Capacitance (Cc): 500 pF

Package: TO-3 Steel

Used/As Removed From Equipment

Difficult to find Vintage Genuine Motorola Power Transistor.  

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Motorola - JAN2N6365 Transistor, PNP. 5961-01-017-0381

Germanium 30v collector to base emitter open and 25 collector to emitter with base short circuited to emitter100.00 max coll current DC 150.0 max total power dissipation. TO-18 gold leads metal can, hermetically sealed.

Made in the USA.

Military NSN 5961-01-017-0381.

MRC      Parameter          Characteristics

ABBH     Inclosure Material            Metal

ABHP     Overall Length   0.170 inches minimum and 0.210 inches maximum

ABJT      Terminal Length               0.500 inches minimum and 0.750 inches maximum

ADAV    Overall Diameter              0.209 inches minimum and 0.230 inches maximum

ALAS      Internal Configuration    Junction contact

ALBA     Electrode Internally-Electrically Connected to Case           Collector

ASCQ     Internal Junction Configuration  PNP

AXGY     Mounting Method           Terminal

AYQS     Terminal Circle Diameter              0.100 inches nominal

CBBL      Features Provided           Hermetically sealed case

CTMZ    III Semiconductor Material           Germanium

CTQN    Voltage Rating in Volts per Characteristic               30.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter

CTQX     Current Rating per Characteristic               100.00 milliamperes source cutoff current maximum

CTRD     Power Rating per Characteristic 150.0 milliwatts small-signal input power, common-collector preset

TEST       Test Data Document       81349-MIL-S-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "nominal", etc.).

TTQY      Terminal Type and Quantity        3 uninsulated wire lead

ZZZK      Specification/Standard Data        81349-MIL-S-19500/471 government specification

 

 

 

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Transistor, NPN. Max voltage: 700VCEO, 1500VCEX. Max current: 5 Amp. Dissipation: 55 watt. Package: TO-3 steel. P/N: BU208. Operating temperature: -65 to 115 Deg C.

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Genuine General Electric - 2N3394 - Transistor, NPN.

Max voltage (Uce): 25V.

Max current: 100mA.

Dissipation: 360mW.

Ucesat/Ic:   1.6V@50mA

Frequency: 120 MHz

Package: TO-92. 

Operating temperature: -55 to 150 Deg C.

Note: Silicon.

Rare Quality GE Vintage component

NSN: 5961-00-928-5637

Alternates: ECG289A , SK3124A,

 

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Texas Instruments - TIL99 Transistor, NPN InfraRed Phototransistor, Foto Transistor, Pyrometric Sensor.

Max voltage: 50Vcb, 30Vce, 7Veb.

Status: Discontinued

Dark Current-Max: 100.0  nA

Mounting Feature: THROUGH HOLE MOUNT

On-State Current-Max: 0.05  A (50mA-Ic)

Operating Temperature-Min: -60.0  Cel

Operating Temperature-Max: 125.0  Cel

Power Dissipation-Max: 0.25  W

Response Time-Max:  8.0E-6  s

Package: TO-18 Gold Lead, Hermetically Sealed.

Note: Case is Collector.

Spectrally & Physically matched with TIL31 GaAs Near-IR 940nm Emitters.

Alternates: ECG3032, NTE3032

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Hitachi - 2SB337 Transistor, PNP Germanium.

Status: Discontinued

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 90 °C

Transition Frequency (ft): 0.125 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Package: TO-3 Steel

Note: New Old Stock - Highly discounted due to transistor are operable but may not meet all of the original manufactures specifications completely. One customer reportedly did some testing on a sample and reported transistor worked fine but did not meet all specs. Over 700 Transistors sold with no returns.

Made In Japan

Genuine Hitachi - New Old Stock - Rare

Alternates: ECG 104, ECG 121, NTE 104, NTE 121 

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2N5810 HOUSE - Transistor, NPN. Small Signal Transistor.

Max voltage: 25VCEO, 35VCBO.

Max current: 750mA.

Dissipation: 625mW.

Package: TO-92 Plastic. P

House# 180-1.

Operating/Storage Temperature: -55 to 150 Deg C.

Note: Silicon Planar Epitaxial.

Noew Old Stock

Package of 10.

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Toshiba - 2SD822 - Transistor, NPN.

Max voltage: 600VCEO, 1500VCBO.

Max current: 7Amp.

Dissipation: 50 watt.

Package: TO-3.

Note: Silicon.

High switching speed.

High Voltage.

Genuine Toshiba - New Old Stock - Rare

Alternates: NTE238, ECG165, SK2SD822.

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5961-01-171-7410 TO-92 MOTOROLA Learn More

Texas Instruments - 2N1303 Texas Instruments Transistor, PNP. Germanium

Status: Discontinued

Maximum Collector-Base Voltage Vcb 30V

Maximum Collector-Emitter Vce 25V

Maximum Emitter-Base Voltage Veb 25V

Maximum Collector current IC Max 0.3A

Transistion Frequency 1Mhz

 Collector Capacitance 20pF

Forward Current Transfer Ratio (hFE) min 20

Dissipation 0.15 watt

TO5

Gold Leads.

Note: Alloy-junction Germanium.

Alternate: Equivalent  2N1309

 

 

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RCA - 2N4240 Transistor, NPN.

Max voltage: 300V.

Max current: 2 Amp.

Dissipation: 35 watt.

Package: TO-66 aluminum.

Note: High voltage.

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RCA - 2N3055HOM / 2N3055H Transistor, NPN Silicon.

Over time, RCA changed the structure of the 2N3055 transistors. The first transistors were called hometaxial, and this model is certainly one of them. They were manufactured by simultaneously inversely doping a wafer with a base doping on both sides, thus generating the emitter and collector layers. Then only the base layer had to be etched free for contacting. 

Max Voltage: 60V.

Max Current: 15 Amp collector, 7 Amp base.

Dissipation: 115 Watt.

Package: TO-3 Steel.

Application: Designed for general purpose switching and amplifier applications.

Operating Temperature: -65 to +200 DegC.

RCA - 2N3055HOM is a High Reliability Version "Hometaxial Selected version" of the old standard which often works as compared to earlier versions "E" (Epitaxial).

Genuine Vintage RCA - New Old Stock - Rare

Alternates: ECG130, BDY73

Note: Genuine RCA 2N3055HOM/2N3055H Power Transistors have a reduced bandwidth as compared to the new currently manufactured 2N3055 replacements. Repair shop personnel report 2N3055H transistors perform better in vintage equipment. Few suppliers still have the older RCA 2N3055H transistors. 

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PNP 40W 2N5956 TO-66 W/HTSNK Learn More

RCA - 40347 Transistor, NPN.

Max voltage: 40VCEO 60VCBO.

Max current: 1.5Amp.

Dissipation: 1 watt.

Package: TO-39. New.

Note: Silicon. With attached radiator (Heatsink).

Genuine Vintage RCA - New Old Stock

Alternate: NTE186.

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RCA - 2N4347 Transistor, NPN.

Max voltage: 120VCEO 140VCBO.

Max current: 5Amp (10Amp Peak).

Dissipation: 100 watt.

Package: TO-3 steel.

Note: High Power Silicon.

Genuine RCA - 2N4347 Vintage New Old Stock

NSN: 5961-00-102-0367

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Transistor, NPN. Voltage: 450VCEO, 1000VCBO. Current: 8 Amp. Dissipation: 125 watt. Operating temperature. -65 to 175 Deg C. Package: TO-3NP (TO-218). Note: Silicon. High Voltage, fast speed. Learn More

National Semiconductor Corp - 2N4401 Transistor, NPN.

Voltage: 40VCEO, 60VCBO.

Current: 600mAdc.

Dissipation: 200mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Note: Maybe replaced with equal manufactured by General Electric.

Package of 25.

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Motorola - JAN2N5582 Transistor, NPN silicon.

Max voltage: 50Vceo, 70Vcbo.

Max current: 800mA. Dissipation: 500mW, 11.43mW/DegC.

Package: TO-4, Manufactures prepped gold leads 5.1mm.

P/N: J2N5582.

Note: Operating temperature -55 to +200 DegC.

Military Jan qualified, NSN 5961-01-018-5993.

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Motorola - 2N4240  Transistor, NPN.

Max Voltage: 300V.

Max Current: 2 Amp.

Dissipation: 35 watt.

Package: TO-66 Steel. 

Note: High Voltage.

Alternate: ECG175

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Motorola - 2N4240 Transistor, NPN.

Max voltage: 300V.

Max current: 2 Amp.

Dissipation: 35 watt.

Package: TO-66 Aluminum, Gold leads.

Note: High voltage.

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International Rectifier - IRFP064 Transistor, N-Channel Power MOSFET.

Voltage: 60V.

Current: 70 Amp.

Dissipation: 300 watt.

RDS on: 0.009 Ohm.

Operating temperature: -55 to 175 Deg C.

Package: TO-247AC.

Note: Hexfet.

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