Toshiba - MG180V2YS40 - Transistor, IGBT N-Channel. P/N: MG180V2YS40.
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Transistor, IGBT. Insulated gate bipolar N-Channel. Max voltage: 1700V. Max current: 180Amp. Dissipation: 1800 watt. Package: Silicon module. P/N: MG180V2YS40. Application: half-bridge configuration for multiple-phase motor drive applications. Note: From: Manufactures box of 9. Manufactured in Japan.
Availability: Only 250 left in stock!