IGBT
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FUJI ELECTRIC - 2MBI200J-060 - Transistor, IGBT. P/N: 2MBI200J-060.$149.00Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 200Amp. Package: Module (2-pack). P/N: 2MBI200J-060. Application: High power switching. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More -
Powerex. - CM200DY-24E - Transistor, IGBT. P/N: CM200DY-24E.Special Price $149.98 Regular Price $185.00Powerex. - CM200DY-24E Transistor, IGBT.
Max Voltage: 1200V.
Max Current: 200Amp.
Package: Module insulated 2-element.
Application: High power switching use.
AC Drive Inverters.
Servo Controls.
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Powerex. - CM200DY-24E - Transistor, IGBT. P/N: CM200DY-24E.$165.00Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 200Amp. Package: Module insulated 2-element. P/N: CM200DY-24E. Application: High power switching use. AC drive inverters. Servo controls. Learn More -
EUPEC - FZ1200R12KF4 - Transistor, IGBT. 1200V 1200Amp.Special Price $569.98 Regular Price $650.00EUPEC - FZ1200R12KF4 - Transistor, IGBT.
VCES: 1200V.
Current: 1200Amp.
Dissipation: 7800 watt.
Item Number: FZ1200R12KF4
Manufacturer: Infineon
Item Category: Transistors
Subcategory: IGBTs
Type: Single
Vges +/-: +/- 20
Iges Max: 0.4 MicroAmps
Vge(th) Min/Max: 6.5 Volts
Vce(sat) Max: 3.2 Volts
Dimensions; Height (mm): 38, Width (mm): 130, Depth (mm): 140 H x W x D (in.): 1.5 x 5.12 x 5.51
Net Weight: 3 lb 5 oz
Package: Module.
Operating temperature: -40 to 125 Deg C.
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DYNEX - GP1200FSS12S - Transistor, IGBT. 1800V 1200Amp.Special Price $749.98 Regular Price $950.00DYNEX - GP1200FSS12S - Transistor, IGBT.
VCES: 1800V.
Current: 1200Amp.
Single Switch.
Package: Module.
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Toshiba - MG200Q2YS40 - Transistor, N Channel IGBT. Used.$80.00Transistor, N Channel IGBT. Max voltage: 1200V. Max current: 200Amp. Package: Module 2-109C1A. P/N: MG200Q2YS40. Note: Silicon. High Voltage. Used/Removed from equipment. No hardware. Learn More
