IGBT
- FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.Special Price $89.98 Regular Price $159.00FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
- MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module
Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6
MOSFET Type: FREDFET 7
Mount: Chassis Mount, Screw
Number of Contacts: 6
Continuous Drain Current: (ID) 90 A
Drain to Source Voltage: (Vdss) 500 V
Fall Time: 77 ns
Gate to Source Voltage (Vgs): 30 V
Input Capacitance: 1.2 nF
Operating Temperature: -40 C to 150 °C
Max Power Dissipation: 694 W
Number of Elements: 4
Power Dissipation: 694 W
Rds On Max: 45 mΩ
Rise Time: 35 ns
Turn-Off Delay Time: 87 ns
Turn-On Delay Time: 18 ns
Approximate Dimensions: See Attached Detailed Diagram
RoHS Compliant
Does not include mounting hardware.
Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet
Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control
Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.
- Toshiba - MG25N2CK1 - Darlington Half Bridge Power ModuleSpecial Price $89.98 Regular Price $125.00
Toshiba - MG25N2CK1 Transistors, IGBT.
25Amp 1100V.
Darlington half bridge power module.
Hardware not included.
Learn More - EUPEC - FZ1200R12KF4 - Transistor, IGBT. 1200V 1200Amp.Special Price $569.98 Regular Price $650.00
EUPEC - FZ1200R12KF4 - Transistor, IGBT.
VCES: 1200V.
Current: 1200Amp.
Dissipation: 7800 watt.
Item Number: FZ1200R12KF4
Manufacturer: Infineon
Item Category: Transistors
Subcategory: IGBTs
Type: Single
Vges +/-: +/- 20
Iges Max: 0.4 MicroAmps
Vge(th) Min/Max: 6.5 Volts
Vce(sat) Max: 3.2 Volts
Dimensions; Height (mm): 38, Width (mm): 130, Depth (mm): 140 H x W x D (in.): 1.5 x 5.12 x 5.51
Net Weight: 3 lb 5 oz
Package: Module.
Operating temperature: -40 to 125 Deg C.
Learn More - DYNEX - GP1200FSS12S - Transistor, IGBT. 1800V 1200Amp.Special Price $749.98 Regular Price $950.00
DYNEX - GP1200FSS12S - Transistor, IGBT.
VCES: 1800V.
Current: 1200Amp.
Single Switch.
Package: Module.
Learn More