IGBT
- FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.Special Price $89.98 Regular Price $159.00FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
- MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module
Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6
MOSFET Type: FREDFET 7
Mount: Chassis Mount, Screw
Number of Contacts: 6
Continuous Drain Current: (ID) 90 A
Drain to Source Voltage: (Vdss) 500 V
Fall Time: 77 ns
Gate to Source Voltage (Vgs): 30 V
Input Capacitance: 1.2 nF
Operating Temperature: -40 C to 150 °C
Max Power Dissipation: 694 W
Number of Elements: 4
Power Dissipation: 694 W
Rds On Max: 45 mΩ
Rise Time: 35 ns
Turn-Off Delay Time: 87 ns
Turn-On Delay Time: 18 ns
Approximate Dimensions: See Attached Detailed Diagram
RoHS Compliant
Does not include mounting hardware.
Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet
Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control
Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.
- Toshiba - MG25N2CK1 - Darlington Half Bridge Power ModuleSpecial Price $89.98 Regular Price $125.00
Toshiba - MG25N2CK1 Transistors, IGBT.
25Amp 1100V.
Darlington half bridge power module.
Hardware not included.
Learn More - Powerex. - KS621K40A41 - IGBT. Voltage: 1,000V. Current: 400Amp. Used.Special Price $78.98 Regular Price $99.98
Powerex. - KS621K40A41 - IGBT, Voltage: 850V, Current: 400Amp.
KS621K40A41
Darlington Independent Power Module - Viso 2.5kV(RMS),3-Stage
Powerex Power Semiconductors
Isolated Case (Y/N)=Yes
Circuits Per Package=1
V(BR)CEO (V)=850
V(BR)CBO (V)=1.0k
I(C) Abs.(A) Collector Current=400
Absolute Max. Power Diss. (W)=1.98k
R(thJC) (¡ãC/W)=63m
h(FE) Min. Static Current Gain=70
@I(C) (A) (Test Condition)=400
@VCE (test)=5.0
V(CE)sat Max.(V)=2.5
@I(C) (A) (Test Condition)=400
@I(B) (A) (Test Condition)=8.0
t(r) Max. (s) Rise time=3.0u
t(f) Max. (s) Fall time.=3.0uPackage: Module, NPN SI Power Transistor
Used/Removed from equipment.
Note. Darlington. No hardware.
NSN: 5961-01-350-7226
Made in Japan
Learn More - Toshiba - MG400Q1US41 - Transistor, IGBT N CH. P/N: MG400Q1US41. Used.$90.00Out of stock
Toshiba - MG400Q1US41 Transistor, IGBT N Channel.
Max voltage: 1200VCES.
Max current: 400Amp IC DC.
Dissipation: 2400 Watt @ 25 Deg C.
ackage: Module.
Storage temperature: -40 to 125 Deg C.
Application: High power switching, motor control.
Used. Guaranteed not DOA. Fair condition. No hardware.
Learn More - Powerex. - CM400HA-24E - IGBT. 400Amp 1200V. New.$195.00Transistor, IGBT. 400Amp 1200V. Single module. Application: AC motor control. Motion/Servo control. Uninterruptible power supplies. Welding power supplies. Laser power supplies. Case: Module. With hardware. Learn More