IGBT

FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

MOSFET Type: FREDFET 7

Mount: Chassis Mount, Screw

Number of Contacts: 6

Continuous Drain Current: (ID) 90 A

Drain to Source Voltage: (Vdss) 500 V

Fall Time: 77 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 1.2 nF

Operating Temperature: -40 C to 150 °C

Max Power Dissipation: 694 W

Number of Elements: 4

Power Dissipation: 694 W

Rds On Max: 45 mΩ

Rise Time: 35 ns

Turn-Off Delay Time: 87 ns

Turn-On Delay Time: 18 ns

Approximate Dimensions: See Attached Detailed Diagram

RoHS Compliant

Does not include mounting hardware.

Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

 

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Toshiba - MG25N2CK1 Transistors, IGBT.

25Amp 1100V.

Darlington half bridge power module.

Hardware not included.

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