Semiconductors

Semiconductor Components

At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.  

Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.

 Find the semiconductor component you need in our selection below.  

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  1. FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    Special Price $89.98 Regular Price $159.00
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
  2. FUJI ELECTRIC - 7MBR10NE120 - Transistor, IGBT.1200V, 10A, Module
    FUJI ELECTRIC - 7MBR10NE120 - Transistor, IGBT.1200V, 10A, Module
    Special Price $89.98 Regular Price $132.00

    FUJI ELECTRIC - 7MBR10NE120 -Transistor, IGBT.

    Insulated Gate Bipolar.

    Max Voltage: 1200V.

    Max Current: 10Amp.

    Package: Module.

    Made in Japan

    Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

    Learn More
  3. Fuji Electric - 2MBI100N-120 - Transistor, IGBT. 1200V, 100 Amp
    Fuji Electric - 2MBI100N-120 - Transistor, IGBT. 1200V, 100 Amp
    Special Price $169.98 Regular Price $185.00

    Fuji Electric - 2MBI100N-120 - Transistor, IGBT. 

    IGBT MODULE ( N Series ) N Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply.

    Status: Discontinued

    Insulated gate Bipolar.

    Max voltage: 1200V.

    Max current: 100Amp.

    Package: Module (2 in one-package). Two Circuits within a single IGBT.  

    Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

    Genuine Fuji Electric - New Old Stock - Bulk Packaged.

    Alternate: Reliance Electric 602909-810AW for GV3000

    Reliance uses them for their GV3000, and the part number they assign the module is: 602909-810AW. 

    Made in Japan

    Learn More
  4. FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT. Dual 2 in 1 Pack.
    FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT. Dual 2 in 1 Pack.
    Special Price $128.98 Regular Price $165.00

    FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT.

    Insulated Gate Bipolar.

    Low Stauration 

    Max Voltage: 1200V.

    Max Current: 100Amp.

    Temperature: 150C

    Mount: Screw

    Package: Dual Module, 2 in 1 Pack.

    Applications: Industrial Machines, Uninterruptible Power Supplies, Welding Machines, Motor Drive, AC/DC Servo Drivces.

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  5. MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    Special Price $189.98 Regular Price $285.00 As low as $169.98

    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

    Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

    MOSFET Type: FREDFET 7

    Mount: Chassis Mount, Screw

    Number of Contacts: 6

    Continuous Drain Current: (ID) 90 A

    Drain to Source Voltage: (Vdss) 500 V

    Fall Time: 77 ns

    Gate to Source Voltage (Vgs): 30 V

    Input Capacitance: 1.2 nF

    Operating Temperature: -40 C to 150 °C

    Max Power Dissipation: 694 W

    Number of Elements: 4

    Power Dissipation: 694 W

    Rds On Max: 45 mΩ

    Rise Time: 35 ns

    Turn-Off Delay Time: 87 ns

    Turn-On Delay Time: 18 ns

    Approximate Dimensions: See Attached Detailed Diagram

    RoHS Compliant

    Does not include mounting hardware.

    Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

    Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

    Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

     

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  6. Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Special Price $89.98 Regular Price $125.00

    Toshiba - MG25N2CK1 Transistors, IGBT.

    25Amp 1100V.

    Darlington half bridge power module.

    Hardware not included.

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  7. Powerex. - PM100CSA060 - Intelligent power module. P/N: PM100CSA060.
    Powerex. - PM100CSA060 - Intelligent power module. P/N: PM100CSA060.
    Special Price $249.95 Regular Price $325.00
    Transistors. Intelligent power module. IGBT output. Max voltage: 600V. Max current: 100Amp. Package: Flat base type insulated. P/N: PM100CSA060. Application: power switching applications. Learn More
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