Semiconductors

Semiconductor Components

At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.  

Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.

 Find the semiconductor component you need in our selection below.  

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  1. FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    Special Price $89.98 Regular Price $159.00
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
  2. FUJI ELECTRIC - 6MBI8L-120 - Transistor, IGBT. P/N: 6MBI8L-120.
    FUJI ELECTRIC - 6MBI8L-120 - Transistor, IGBT. P/N: 6MBI8L-120.
    Special Price $129.95 Regular Price $159.00
    Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 8Amp. Package: Module (6-pack) M604. P/N: 6MBI8L-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. More info: www.fujielectric.com Learn More
  3. MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    Special Price $189.98 Regular Price $285.00 As low as $169.98

    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

    Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

    MOSFET Type: FREDFET 7

    Mount: Chassis Mount, Screw

    Number of Contacts: 6

    Continuous Drain Current: (ID) 90 A

    Drain to Source Voltage: (Vdss) 500 V

    Fall Time: 77 ns

    Gate to Source Voltage (Vgs): 30 V

    Input Capacitance: 1.2 nF

    Operating Temperature: -40 C to 150 °C

    Max Power Dissipation: 694 W

    Number of Elements: 4

    Power Dissipation: 694 W

    Rds On Max: 45 mΩ

    Rise Time: 35 ns

    Turn-Off Delay Time: 87 ns

    Turn-On Delay Time: 18 ns

    Approximate Dimensions: See Attached Detailed Diagram

    RoHS Compliant

    Does not include mounting hardware.

    Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

    Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

    Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

     

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  4. Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Special Price $89.98 Regular Price $125.00

    Toshiba - MG25N2CK1 Transistors, IGBT.

    25Amp 1100V.

    Darlington half bridge power module.

    Hardware not included.

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  5. EUPEC - FZ1200R12KF4 - Transistor, IGBT. 1200V 1200Amp.
    EUPEC - FZ1200R12KF4 - Transistor, IGBT. 1200V 1200Amp.
    Special Price $569.98 Regular Price $650.00

    EUPEC - FZ1200R12KF4 - Transistor, IGBT.

    VCES: 1200V.

    Current: 1200Amp.

    Dissipation: 7800 watt.

    Item Number: FZ1200R12KF4

    Manufacturer:  Infineon

    Item Category:  Transistors

    Subcategory: IGBTs

    Type: Single

    Vges +/-: +/- 20

    Iges Max: 0.4 MicroAmps

    Vge(th) Min/Max: 6.5 Volts

    Vce(sat) Max: 3.2 Volts

    Dimensions; Height (mm): 38, Width (mm): 130, Depth (mm): 140 H x W x D (in.): 1.5 x 5.12 x 5.51

    Net Weight: 3 lb 5 oz

    Package: Module.

    Operating temperature: -40 to 125 Deg C.

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  6. DYNEX - GP1200FSS12S - Transistor, IGBT. 1800V 1200Amp.
    DYNEX - GP1200FSS12S - Transistor, IGBT. 1800V 1200Amp.
    Special Price $749.98 Regular Price $950.00

    DYNEX - GP1200FSS12S - Transistor, IGBT.

    VCES: 1800V.

    Current: 1200Amp.

    Single Switch.

    Package: Module.

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