Semiconductors

Semiconductor Components

At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.  

Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.

 Find the semiconductor component you need in our selection below.  

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  1. FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    Special Price $89.98 Regular Price $159.00
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
  2. FUJI ELECTRIC - 7MBR10NE120 - Transistor, IGBT.1200V, 10A, Module
    FUJI ELECTRIC - 7MBR10NE120 - Transistor, IGBT.1200V, 10A, Module
    Special Price $89.98 Regular Price $132.00

    FUJI ELECTRIC - 7MBR10NE120 -Transistor, IGBT.

    Insulated Gate Bipolar.

    Max Voltage: 1200V.

    Max Current: 10Amp.

    Package: Module.

    Made in Japan

    Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

    Learn More
  3. MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    Special Price $189.98 Regular Price $285.00 As low as $169.98

    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

    Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

    MOSFET Type: FREDFET 7

    Mount: Chassis Mount, Screw

    Number of Contacts: 6

    Continuous Drain Current: (ID) 90 A

    Drain to Source Voltage: (Vdss) 500 V

    Fall Time: 77 ns

    Gate to Source Voltage (Vgs): 30 V

    Input Capacitance: 1.2 nF

    Operating Temperature: -40 C to 150 °C

    Max Power Dissipation: 694 W

    Number of Elements: 4

    Power Dissipation: 694 W

    Rds On Max: 45 mΩ

    Rise Time: 35 ns

    Turn-Off Delay Time: 87 ns

    Turn-On Delay Time: 18 ns

    Approximate Dimensions: See Attached Detailed Diagram

    RoHS Compliant

    Does not include mounting hardware.

    Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

    Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

    Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

     

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  4. Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Special Price $89.98 Regular Price $125.00

    Toshiba - MG25N2CK1 Transistors, IGBT.

    25Amp 1100V.

    Darlington half bridge power module.

    Hardware not included.

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  5. Powerex. - KS621K40A41 - IGBT. Voltage: 1,000V. Current: 400Amp. Used.
    Powerex. - KS621K40A41 - IGBT. Voltage: 1,000V. Current: 400Amp. Used.
    Special Price $78.98 Regular Price $99.98

    Powerex. - KS621K40A41 - IGBT, Voltage: 850V, Current: 400Amp.

    KS621K40A41
    Darlington Independent Power Module - Viso 2.5kV(RMS),3-Stage
    Powerex Power Semiconductors
    Isolated Case (Y/N)=Yes
    Circuits Per Package=1
    V(BR)CEO (V)=850
    V(BR)CBO (V)=1.0k
    I(C) Abs.(A) Collector Current=400
    Absolute Max. Power Diss. (W)=1.98k
    R(thJC) (¡ãC/W)=63m
    h(FE) Min. Static Current Gain=70
    @I(C) (A) (Test Condition)=400
    @VCE (test)=5.0
    V(CE)sat Max.(V)=2.5
    @I(C) (A) (Test Condition)=400
    @I(B) (A) (Test Condition)=8.0
    t(r) Max. (s) Rise time=3.0u
    t(f) Max. (s) Fall time.=3.0u

    Package: Module, NPN SI Power Transistor

    Used/Removed from equipment.

    Note. Darlington. No hardware.

    NSN: 5961-01-350-7226

    Made in Japan

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  6. Toshiba - MG400Q1US41 - Transistor, IGBT N CH. P/N: MG400Q1US41. Used.
    Toshiba - MG400Q1US41 - Transistor, IGBT N CH. P/N: MG400Q1US41. Used.
    $90.00

    Toshiba - MG400Q1US41 Transistor, IGBT N Channel.

    Max voltage: 1200VCES.

    Max current: 400Amp IC DC.

    Dissipation: 2400 Watt @ 25 Deg C.

    ackage: Module.

    Storage temperature: -40 to 125 Deg C.

    Application: High power switching, motor control.

    Used. Guaranteed not DOA. Fair condition. No hardware.

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  7. Powerex. - CM400HA-24E - IGBT. 400Amp 1200V. New.
    Powerex. - CM400HA-24E - IGBT. 400Amp 1200V. New.
    $195.00
    Transistor, IGBT. 400Amp 1200V. Single module. Application: AC motor control. Motion/Servo control. Uninterruptible power supplies. Welding power supplies. Laser power supplies. Case: Module. With hardware. Learn More
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