Semiconductors

Semiconductor Components

At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.  

Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.

 Find the semiconductor component you need in our selection below.  

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  1. FUJI ELECTRIC - 2MBI75N060 - Transistor, IGBT. P/N: 2MBI75N060.
    FUJI ELECTRIC - 2MBI75N060 - Transistor, IGBT. P/N: 2MBI75N060.
    READY TO SHIP - ONLY 51 LEFT IN STOCK!

    Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 75Amp. Package: Module (2-pack). P/N: 2MBI75N060. Application: Inverter for motor drive. AC and DC servo drive. Uninteruptible power supplies. Industrial machines, such as welding machines. More info: www.fujisemicon-elis.com

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  2. FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    Special Price $89.98 Regular Price $159.00
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
  3. FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT Power Module. Insulated Gate Bipolar.
    FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT Power Module. Insulated Gate Bipolar.
    Special Price $78.95 Regular Price $120.00 As low as $68.95

    FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT. Power Module. Insulated Gate Bipolar.

    Half Bridge IGBT Power Module

    Max Voltage: 1200V.

    Max Current: 75Amp.

    V(BR)CES (V)=1.2kV

    (BR)GES (V)=20

    I(C) Abs.(A) Collector Current=75

    Absolute Max. Power Diss. (W)=480

    I(CES) Min. (A)=1.0m

    I(GES) Max. (A)=15u

    V(CE)sat Max.(V)=2.2

    t(d)off Max. (s) Off time=950n

    t(f) Max. (s) Fall time.=200n

    Package: Module (2-Pack Internal).

    Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

    Genuine Fugi Electric- Factory New Old Stock

    Made in Japan

     

     

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  4. MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    Special Price $189.98 Regular Price $285.00 As low as $169.98

    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

    Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

    MOSFET Type: FREDFET 7

    Mount: Chassis Mount, Screw

    Number of Contacts: 6

    Continuous Drain Current: (ID) 90 A

    Drain to Source Voltage: (Vdss) 500 V

    Fall Time: 77 ns

    Gate to Source Voltage (Vgs): 30 V

    Input Capacitance: 1.2 nF

    Operating Temperature: -40 C to 150 °C

    Max Power Dissipation: 694 W

    Number of Elements: 4

    Power Dissipation: 694 W

    Rds On Max: 45 mΩ

    Rise Time: 35 ns

    Turn-Off Delay Time: 87 ns

    Turn-On Delay Time: 18 ns

    Approximate Dimensions: See Attached Detailed Diagram

    RoHS Compliant

    Does not include mounting hardware.

    Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

    Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

    Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

     

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  5. Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Special Price $89.98 Regular Price $125.00

    Toshiba - MG25N2CK1 Transistors, IGBT.

    25Amp 1100V.

    Darlington half bridge power module.

    Hardware not included.

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  6. Powerex. - CM75DY-12H - IGBT. Dual 75Amp 600V. P/N: CM75DY-12H.
    Powerex. - CM75DY-12H - IGBT. Dual 75Amp 600V. P/N: CM75DY-12H.
    $140.00
    Transistors, IGBT. Dual 75Amp 600V. Application: AC motor control. Motion/Servo control. Uninterruptible power supplies. Welding power supplies. Laser power supplies. Case: Module. Learn More
  7. FUJI ELECTRIC - 2MBI75F-120 - Transistor, IGBT. P/N: 2MBI75F-120.
    FUJI ELECTRIC - 2MBI75F-120 - Transistor, IGBT. P/N: 2MBI75F-120.
    $124.00
    Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
  8. FUJI ELECTRIC - 2MBI75F-120 - Transistor, IGBT. P/N: 2MBI75F-120.
    FUJI ELECTRIC - 2MBI75F-120 - Transistor, IGBT. P/N: 2MBI75F-120.
    $124.00
    Transistor, IGBT. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
  9. FAIRCHILD - FGB20N6S2 - Transistor, IGBT N Channel. P/N: FGB20N6S2.
    FAIRCHILD - FGB20N6S2 - Transistor, IGBT N Channel. P/N: FGB20N6S2.
    $1.99
    Transistor, IGBT N Channel. Max voltage: 600Vces. Max current: 28 Amp @ 25 Deg C, 13 Amp @ 110 Deg C. Dissipation: 125 watt. Package: TO-263/D2PAK . P/N: FGB20N6S2. Note: Series: SMPS II. Operating temperature: -55 to 150 Deg C. Learn More
  10. Powerex. - PM75DSA120 - IGBT. P/N: PM75DSA120.
    Powerex. - PM75DSA120 - IGBT. P/N: PM75DSA120.
    $325.00
    Transistor, intelligent power module. Max voltage: 1200V. Max current: 75Amp. Package: Flat base type insulated. P/N: PM75DSA120. Application: power switching applications. Learn More
  11. Fuji Electric - 2MBI75F-120 - Transistor, IGBT. P/N: 2MBI75F-120.
    Fuji Electric - 2MBI75F-120 - Transistor, IGBT. P/N: 2MBI75F-120.
    $124.00
    Transistor, IGBT. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. No hardware. Learn More
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