Semiconductors
Semiconductor Components
At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.
Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.
Find the semiconductor component you need in our selection below.
- Fuji Electric - 2MBI100N-120 - Transistor, IGBT. 1200V, 100 AmpSpecial Price $169.98 Regular Price $185.00
Fuji Electric - 2MBI100N-120 - Transistor, IGBT.
IGBT MODULE ( N Series ) N Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply.
Status: Discontinued
Insulated gate Bipolar.
Max voltage: 1200V.
Max current: 100Amp.
Package: Module (2 in one-package). Two Circuits within a single IGBT.
Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.
Genuine Fuji Electric - New Old Stock - Bulk Packaged.
Alternate: Reliance Electric 602909-810AW for GV3000
Reliance uses them for their GV3000, and the part number they assign the module is: 602909-810AW.
Made in Japan
Learn More - FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT. Dual 2 in 1 Pack.Special Price $128.98 Regular Price $165.00
FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT.
Insulated Gate Bipolar.
Low Stauration
Max Voltage: 1200V.
Max Current: 100Amp.
Temperature: 150C
Mount: Screw
Package: Dual Module, 2 in 1 Pack.
Applications: Industrial Machines, Uninterruptible Power Supplies, Welding Machines, Motor Drive, AC/DC Servo Drivces.
Learn More - FUJI ELECTRIC - 7MBR30NE060 - Transistor, IGBT. P/N: 7MBR30NE060.$250.00Transistor, IGBT. Max voltage: 600V. Max current: 30Amp. Package: Module. P/N: 7MBR30NE060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
- Powerex. - PM100CSA060 - Intelligent power module. P/N: PM100CSA060.Special Price $249.95 Regular Price $325.00Transistors. Intelligent power module. IGBT output. Max voltage: 600V. Max current: 100Amp. Package: Flat base type insulated. P/N: PM100CSA060. Application: power switching applications. Learn More
- IXYS - IXGM30N50A - Transistor, MOSIGBT. P/N: IXGM30N50A.$25.99Transistor, MOSIGBT. Max voltage: 500V. Max current: 30Amp. Dissipation: 200 Watt. Package: TO-3 (TO-204). P/N: IXGM30N50A. Note: Time: 800ns. Learn More
- OnSemiconductor Fairchild - HGT1N30N60A4D - Transistor, IGBT. 30A 600VSpecial Price $18.98 Regular Price $24.50
OnSemiconductor Fairchild - HGT1N30N60A4D - Transistor, IGBT.
30A 600V MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Status: Discontinued
Manufacturer: Onsemiconductor /Fairchild
Product Category: Motor / Motion / Ignition Controllers & Drivers
Operating Temperature: - 55 C to + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-227-4
Dimensions: Height: 9.6 mm, Length: 38.2 mm
Series: SPM 3
Width: 25.04 mm
Pd - Power Dissipation: 225 W
Product Type: Motor / Motion / Ignition Controllers & Drivers
Part # Aliases: HGT1N30N60A4D_NL
Unit Weight: 1.058219 oz
- Toshiba - MG180V2YS40 - Transistor, IGBT N-Channel. P/N: MG180V2YS40.Special Price $259.88 Regular Price $299.99Out of stock
Toshiba - MG180V2YS40 Transistor, IGBT.
Insulated gate bipolar N-Channel.
Max voltage: 1700V.
Max current: 180Amp.
Dissipation: 1800 watt.
Package: Silicon module.
MG180V2YS40.
Application: half-bridge configuration for multiple-phase motor drive applications.
From: Manufactures box of 9.
Manufactured in Japan.
Learn More