Semiconductors
Semiconductor Components
At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.
Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.
Find the semiconductor component you need in our selection below.
- FUJI ELECTRIC - 2MBI200J-060 - Transistor, IGBT. P/N: 2MBI200J-060.$149.00Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 200Amp. Package: Module (2-pack). P/N: 2MBI200J-060. Application: High power switching. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
- Powerex. - CM200DY-24E - Transistor, IGBT. P/N: CM200DY-24E.Special Price $149.98 Regular Price $185.00
Powerex. - CM200DY-24E Transistor, IGBT.
Max Voltage: 1200V.
Max Current: 200Amp.
Package: Module insulated 2-element.
Application: High power switching use.
AC Drive Inverters.
Servo Controls.
Learn More - Powerex. - CM200DY-24E - Transistor, IGBT. P/N: CM200DY-24E.$165.00Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 200Amp. Package: Module insulated 2-element. P/N: CM200DY-24E. Application: High power switching use. AC drive inverters. Servo controls. Learn More
- FUJI ELECTRIC - 7MBR30NE060 - Transistor, IGBT. P/N: 7MBR30NE060.$250.00Transistor, IGBT. Max voltage: 600V. Max current: 30Amp. Package: Module. P/N: 7MBR30NE060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
- IXYS - IXGM30N50A - Transistor, MOSIGBT. P/N: IXGM30N50A.$25.99Transistor, MOSIGBT. Max voltage: 500V. Max current: 30Amp. Dissipation: 200 Watt. Package: TO-3 (TO-204). P/N: IXGM30N50A. Note: Time: 800ns. Learn More
- OnSemiconductor Fairchild - HGT1N30N60A4D - Transistor, IGBT. 30A 600VSpecial Price $18.98 Regular Price $24.50
OnSemiconductor Fairchild - HGT1N30N60A4D - Transistor, IGBT.
30A 600V MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Status: Discontinued
Manufacturer: Onsemiconductor /Fairchild
Product Category: Motor / Motion / Ignition Controllers & Drivers
Operating Temperature: - 55 C to + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-227-4
Dimensions: Height: 9.6 mm, Length: 38.2 mm
Series: SPM 3
Width: 25.04 mm
Pd - Power Dissipation: 225 W
Product Type: Motor / Motion / Ignition Controllers & Drivers
Part # Aliases: HGT1N30N60A4D_NL
Unit Weight: 1.058219 oz
- Toshiba - MG180V2YS40 - Transistor, IGBT N-Channel. P/N: MG180V2YS40.Special Price $259.88 Regular Price $299.99Out of stock
Toshiba - MG180V2YS40 Transistor, IGBT.
Insulated gate bipolar N-Channel.
Max voltage: 1700V.
Max current: 180Amp.
Dissipation: 1800 watt.
Package: Silicon module.
MG180V2YS40.
Application: half-bridge configuration for multiple-phase motor drive applications.
From: Manufactures box of 9.
Manufactured in Japan.
Learn More - Toshiba - MG200Q2YS40 - Transistor, N Channel IGBT. Used.$80.00Transistor, N Channel IGBT. Max voltage: 1200V. Max current: 200Amp. Package: Module 2-109C1A. P/N: MG200Q2YS40. Note: Silicon. High Voltage. Used/Removed from equipment. No hardware. Learn More