Semiconductors

Semiconductor Components

At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.  

Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.

 Find the semiconductor component you need in our selection below.  

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  1. FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.
    Special Price $89.98 Regular Price $159.00
    FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
  2. MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
    Special Price $189.98 Regular Price $285.00 As low as $169.98

    MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

    Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

    MOSFET Type: FREDFET 7

    Mount: Chassis Mount, Screw

    Number of Contacts: 6

    Continuous Drain Current: (ID) 90 A

    Drain to Source Voltage: (Vdss) 500 V

    Fall Time: 77 ns

    Gate to Source Voltage (Vgs): 30 V

    Input Capacitance: 1.2 nF

    Operating Temperature: -40 C to 150 °C

    Max Power Dissipation: 694 W

    Number of Elements: 4

    Power Dissipation: 694 W

    Rds On Max: 45 mΩ

    Rise Time: 35 ns

    Turn-Off Delay Time: 87 ns

    Turn-On Delay Time: 18 ns

    Approximate Dimensions: See Attached Detailed Diagram

    RoHS Compliant

    Does not include mounting hardware.

    Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

    Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

    Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

     

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  3. Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Toshiba - MG25N2CK1 - Darlington Half Bridge Power Module
    Special Price $89.98 Regular Price $125.00

    Toshiba - MG25N2CK1 Transistors, IGBT.

    25Amp 1100V.

    Darlington half bridge power module.

    Hardware not included.

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  4. FUJI ELECTRIC - 7MBR30NE060 - Transistor, IGBT. P/N: 7MBR30NE060.
    FUJI ELECTRIC - 7MBR30NE060 - Transistor, IGBT. P/N: 7MBR30NE060.
    $250.00
    Transistor, IGBT. Max voltage: 600V. Max current: 30Amp. Package: Module. P/N: 7MBR30NE060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
  5. Powerex. - KS624550 - IGBT. 450VCEO 500Amp. Used.
    Powerex. - KS624550 - IGBT. 450VCEO 500Amp. Used.
    $190.00
    IGBT. Voltage: 450VCEO, 600VCBO. Current: 500Amp. Package: Module, Used/Removed from equipment. No hardware. Appear as new. Note. Darlington. Learn More
  6. IXYS - IXGM30N50A - Transistor, MOSIGBT. P/N: IXGM30N50A.
    IXYS - IXGM30N50A - Transistor, MOSIGBT. P/N: IXGM30N50A.
    $25.99
    Transistor, MOSIGBT. Max voltage: 500V. Max current: 30Amp. Dissipation: 200 Watt. Package: TO-3 (TO-204). P/N: IXGM30N50A. Note: Time: 800ns. Learn More
  7. OnSemiconductor Fairchild - HGT1N30N60A4D - Transistor, IGBT. 30A 600V
    OnSemiconductor Fairchild - HGT1N30N60A4D - Transistor, IGBT. 30A 600V
    Special Price $18.98 Regular Price $24.50

    OnSemiconductor Fairchild  - HGT1N30N60A4D - Transistor, IGBT.

    30A 600V MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

    Status: Discontinued

    Manufacturer: Onsemiconductor /Fairchild         

    Product Category: Motor / Motion / Ignition Controllers & Drivers            

    Operating Temperature: - 55 C to + 150 C             

    Mounting Style: SMD/SMT          

    Package / Case: SOT-227-4          

    Dimensions: Height: 9.6 mm, Length: 38.2 mm

    Series: SPM 3    

    Width: 25.04 mm            

    Pd - Power Dissipation: 225 W   

    Product Type: Motor / Motion / Ignition Controllers & Drivers    

    Part # Aliases: HGT1N30N60A4D_NL       

    Unit Weight: 1.058219 oz

     

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