Semiconductors

Semiconductor Components

At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.  

Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.

 Find the semiconductor component you need in our selection below.  

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  1. Siliconix - P1087 - P-Channel switch Transistors New TO-92
    Special Price $2.25 Regular Price $3.00
    -30V Drain 30V Gate 50ma P-Channel switch Transistors New TO-92 Learn More
  2. FAIRCHILD - FDC6327C - Dual N & P-Channel mosfet.
    $0.25
    NOT IN STOCK - CALL FOR PRICE AND AVAILABILITY
    Transistors. Dual N & P-Channel mosfet. 2.5V specified power trench. Fast switching speed. Package: Super SOT6 SMD. From: Manufactures reel. Learn More
  3. Siliconix - U147 - Transistor, P-Channel JFET.
    $2.95
    NOT IN STOCK - CALL FOR PRICE AND AVAILABILITY
    Transistor, P-Channel JFET. Max voltage: 20V. Dissipation: 300mw. Package: TO-18 gold. Learn More
  4. RCA - 40526 MIL - MILITARY PNPN
    Special Price $15.95 Regular Price $21.00
    JUNCTION CONTACT CHANNEL POLARITY AND CONTROL TYPE P-CHANNEL INSULATED GATE TYPE FEATURES PROVIDED HERMETICALLY SEALED CASE SEMICONDUCTOR MATERIAL SILICON SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: PNPN TO-5 ALL GOLD LONG LEADS Learn More
  5. Motorola - 2N4352 - TO-72 P-Channel Enhancement Mode MOS FET NEW GOLD
    Special Price $5.98 Regular Price $9.00

    Motorola 2N4352 Transistor, P-Channel Enhancement Mode MOS FET Amplifier/Switch TO-72 GOLD NEW 

    MAXIMUM RATINGS
    Rating Symbol Value Unit Drain-Source Voltage vds 25 Vdc
    Drain-Gate Voltage Vdg 30 Vdc
    Gate-Source Voltage Vgs ±30 Vdc
    Gate Current "G 30 mAdc
    Total Device Dissipation @ TA = 25°C
    Derate above 25°C PD 300
    1,7 mW
    mW/°C
    Total Device Dissipation @ Trj = 25°C
    Derate above 25°C pd 800
    4.56 mW
    mVWC
    Junction Temperature Range Tj 175 °C Storage Temperature Range Tstq -65 to +175 °C
    2N4352
    CASE 20-03, STYLE 2
    TO-72 (TO-206AF)
    MOS FET
    SWITCHING
    P-CHANNEL — ENHANCEMENT
    ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.] Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage
    (l D = -10 mA, Vqs = o) V(BR)DSX -25 - Vdc
    Zero-Gate-Voltage Drain Current
    (vDs = - 10 v, vqs = o) ta = 25°c TA = 150°C
    toss - -10 -10
    nAdc
    Gate Reverse Current (Vqs = ±30V, VDS = 0) 'gss — ±10 pAdc ON CHARACTERISTICS
    Gate Threshold Voltage
    (VDS = -10 V, l D = -10/iA) vGS(Th) -1.0 -5.0 Vdc
    Drain-Source On-Voltage
    (Iq = -2.0 mA, Vqs = -10 V) vDS(on) — -1.0 V
    On-State Drain Current (Vqs = -iovDS = -lov)
    !D(on) -3.0 — mA
    SMALL-SIGNAL CHARACTERISTICS
    Drain-Source Resistance (VGS = -10V,ID = 0, f = 1.0 kHz)
    rds(on) — 600 ohms
    Forward Transfer Admittance (Vds = -iov. Id = 2.0 mA, f = 1.0 kHz)
    lYfcl 1000 — /nmho
    Input Capacitance (Vds = -10 V, Vqs = O, f = 140 kHz)
    Cj Ss — 5.0 PF
    Reverse Transfer Capacitance
    (VDS = 0, Vqs = 0,f = 1 40 kHz) crss — 1.3 pF
    Drain-Substrate Capacitance (VD(SUB) = -10 V, f = 140 kHz) cd(sub) — 4.0 PF

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  6. INTERSIL - RFP30P06 - 30A 60V 0.065-Ohm TO-220 P-Channel
    $3.59

    30A 60V 0.065-Ohm P-Channel Power Mosfet Transistors.Factory new TO-220

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  7. Harris Corp - RFD8P05 - NEW SMD
    Special Price $4.50 Regular Price $6.00
    8A 50V 0.300-Ohm P-Channel Power MOSFETsNEW 2-PIN SMD Learn More
  8. Motorola - MFQ5460P - IC, transistor. Quad P-Channel junction FET.
    $4.99
    IC, transistor. Quad P-Channel junction FET. 40V, forward gate current 10mA, drain current 20mA, 0.5 watt each transistor, 1.5 watt total device. Case: 14 Dip. New. From manufactures tubes of 25 Per. Learn More
  9. IR - IRF9Z34S - Transistor, P-Channel Hexfet. P/N: IRF9Z34S.
    $1.00
    Transistor, P-Channel Hexfet. Max voltage: 60V. Max current: 18A. Dissipation: 3.7W TA, 88W TC. Gain: 72 Amp. Package: TO-220/D-Pak SMD. P/N: IRF9Z34S. Note: RDS On: 0.14 Ohm. Learn More
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