Semiconductors

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 75Amp. Package: Module (2-pack). P/N: 2MBI75N060. Application: Inverter for motor drive. AC and DC servo drive. Uninteruptible power supplies. Industrial machines, such as welding machines. More info: www.fujisemicon-elis.com

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Transistor, microwave 80GHz. Package: 4-pin Outline 83. P/N: NE70083. Note: Low noise Ku-K band GaAs MESFET. RED DOT =2SK353. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 200Amp. Package: Module (2-pack). P/N: 2MBI200J-060. Application: High power switching. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT. Power Module. Insulated Gate Bipolar.

Half Bridge IGBT Power Module

Max Voltage: 1200V.

Max Current: 75Amp.

V(BR)CES (V)=1.2kV

(BR)GES (V)=20

I(C) Abs.(A) Collector Current=75

Absolute Max. Power Diss. (W)=480

I(CES) Min. (A)=1.0m

I(GES) Max. (A)=15u

V(CE)sat Max.(V)=2.2

t(d)off Max. (s) Off time=950n

t(f) Max. (s) Fall time.=200n

Package: Module (2-Pack Internal).

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fugi Electric- Factory New Old Stock

Made in Japan

 

 

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ONSEMI FAIRCHILD - NDS9948 - Transistor, P Channel FET, Dual.

Drain Source: -60V.

Drain Current: -2.3Amp @ 25 Deg, 1.8Amp @ 70 Deg.

Dissipation: Single operation: 1.6 watt.

Dual Operation: 2 watt.

Package: 8 SOIC SMD.

From: Manufacture new T/R. P/N: NDS9948.

Operating Temperature: -55 to 150 Deg C. 

Note: Enhancement mode.

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Transistor, IGBT, NPN. Max voltage: 600V. Max current: 300Amp. Package: Module. P/N: MG300G1UL1. Note: Silicon, triple diffused. With hardware. Learn More

FUJI ELECTRIC - 7MBR10NE120 -Transistor, IGBT.

Insulated Gate Bipolar.

Max Voltage: 1200V.

Max Current: 10Amp.

Package: Module.

Made in Japan

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

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Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 8Amp. Package: Module (6-pack) M604. P/N: 6MBI8L-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. More info: www.fujielectric.com Learn More

Fuji Electric - 2MBI100N-120 - Transistor, IGBT. 

IGBT MODULE ( N Series ) N Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply.

Status: Discontinued

Insulated gate Bipolar.

Max voltage: 1200V.

Max current: 100Amp.

Package: Module (2 in one-package). Two Circuits within a single IGBT.  

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fuji Electric - New Old Stock - Bulk Packaged.

Alternate: Reliance Electric 602909-810AW for GV3000

Reliance uses them for their GV3000, and the part number they assign the module is: 602909-810AW. 

Made in Japan

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FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT.

Insulated Gate Bipolar.

Low Stauration 

Max Voltage: 1200V.

Max Current: 100Amp.

Temperature: 150C

Mount: Screw

Package: Dual Module, 2 in 1 Pack.

Applications: Industrial Machines, Uninterruptible Power Supplies, Welding Machines, Motor Drive, AC/DC Servo Drivces.

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Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V? Max current: 150Amp. Package: Module (2-pack). P/N: 2MBI150-20. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Label is torn off. We believe this is 150A 600V or 1200V? Part is being Sold As Is. Learn More

Toshiba - MG25J1BS11 Transistor, IGBT.

Status: Discontinued

Max voltage: 600V (.6KV).

Max current: 25Amp.

Package: Module with Hardware.

Made in Japan

New Old Stock

 

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MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

MOSFET Type: FREDFET 7

Mount: Chassis Mount, Screw

Number of Contacts: 6

Continuous Drain Current: (ID) 90 A

Drain to Source Voltage: (Vdss) 500 V

Fall Time: 77 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 1.2 nF

Operating Temperature: -40 C to 150 °C

Max Power Dissipation: 694 W

Number of Elements: 4

Power Dissipation: 694 W

Rds On Max: 45 mΩ

Rise Time: 35 ns

Turn-Off Delay Time: 87 ns

Turn-On Delay Time: 18 ns

Approximate Dimensions: See Attached Detailed Diagram

RoHS Compliant

Does not include mounting hardware.

Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

 

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Powerex CM1000HA-25H Power Transistor Module IGBT, 1000 Amp 1200V. Single module.

Collector Emitter Breakdown Voltage: 1.2 kV

Collector Emitter Voltage (VCEO): 3.6 V

Element Configuration: Single

Input: Standard

Input Capacitance: 200 nF

Max Collector Current: 1 kA

Max Power Dissipation: 5.8 kW

Compliance: RoHS Compliant     

Applications: AC motor control. Motion/Servo Control. Uninterruptible power supplies, Welding power supplies. Laser power supplies. Module Case, With Hardware.

 

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Zetex - ZVN2106A - Transistor, N Channel Vertical DMOS FET.

Voltage: 60 Vds.

Current: ID (Cont) 450mA.

RDS (on): 2 Ohm.

Dissipation: 700mW.

Operating Temperature: -55 to 150 Deg C.

Package: TO-92, Plastic.

New Old Stock

Note: Enhancement mode.

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Toshiba - MG300M1UK1 Transistor, IGBT.

Max voltage: 1000V (1KV).

Max current: 300Amp.

Package: Module.

Note: Used/Removed from equipment.

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Toshiba - MG25N2CK1 Transistors, IGBT.

25Amp 1100V.

Darlington half bridge power module.

Hardware not included.

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Transistor, N Channel FET. Max voltage: 30V. Max current: 4mA (10mA max). Dissipation: 300mW. Package: TO-106 ceramic, gold leads. (Similar to TO-18). P/N: 2N4303. Learn More

Transistor, N Channel FET. Dual monolithic. Max Voltage: 50V. Collector current: 50mA. Dissipation: 250mW one side, 500mW both sides. Package: TO-71-6 long gold leads. P/N: 2N5197 Learn More

N-Channel Enhancement-Mode Vertical DMOS FETs60V 0.5A 5-OHM TO-92 Learn More

-30V Drain 30V Gate 50ma P-Channel switch Transistors New TO-92 Learn More

Transistor, N-Channel FET. Voltage: 30V. Current: 10mA. Dissipation: 200mW. Package: TO-92 plastic. Note: Silicon. Military NSN 5961-01-015-9884. Fluke P/N: J2168 and or 386730. Learn More

Transistor, N-Channel FET. Voltage: 30V. Current: 10mA. Dissipation: 200mW. Package: TO-92 plastic. Note: Silicon. Military NSN 5961-01-015-9884. Fluke P/N: J2168 and or 386730. Learn More