Semiconductors
Semiconductor Components
At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.
Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.
Find the semiconductor component you need in our selection below.
- Advanced Power Technology - APT4525AN - N Channel Mosfet, 20Amp 450V.$4.99Transistors. N Channel Mosfet, 20Amp 450V 230Watt. Case: TO-3 steel.Manufactured by: Advanced Power Technology. Learn More
- Vishay Siliconix - SI9400DY - Si9400DY - Transistor, P Channel MOSFET. 20V. SOIC, 8 SMD$2.98 As low as $1.98Out of stock
Vishay Siliconix - SI9400DY - Si9400DY - Transistor, P Channel MOSFET.
Max voltage: 20V(D-S).
Continuous drain current: 2.5A @ 25 Deg C, 2.0Amp @ 70 Deg C.
Dissipation: 2.5 watt @ 25 Deg C, 1.6 watt @ 70 Deg C.
Package: SOIC 8 SMD.
Operating Temperature: -55 to 150 Deg C.
Learn More - Siliconix - VN88AF - Transistor, N Channel DS Mosfet.$9.00Transistor, N Channel DS Mosfet. Max voltage: 80V. Package: TO-202AA. Note: 4 Ohm. Learn More
- NEC Corporation - NE70083 - Transistor, microwave 80GHz. P/N: NE70083.$14.99Transistor, microwave 80GHz. Package: 4-pin Outline 83. P/N: NE70083. Note: Low noise Ku-K band GaAs MESFET. RED DOT =2SK353. Learn More
- IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247ADIN STOCK - MORE THAN 100 READY TO SHIP!
IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247AD
Current Rating: 20 A
Drain to Source Breakdown Voltage: 600 V
Drain to Source Resistance: 350 mΩ
Drain to Source Voltage (Vdss): 600 V
Fall Time: 40 ns
Gate to Source Voltage (Vgs): 20 V
Input Capacitance: 4.5 nF
Operating Temperature: -55 °C to 150 °C
Max Power Dissipation: 300 W
Power Dissipation: 300 W
Rds On Max: 350 mΩ Resistance: 350 mΩ
Rise Time: 43 ns
Turn-Off Delay Time: 70 ns
Voltage Rating (DC): 600 V
RoHS Compliant
Package: TO-247AD.
Accessories: Fischer Elektronik - FK 243 MI 247 H, Fischer Elektronik - FK 243 MI 247 O, Fischer Elektronik - SK 145/25 STS-220, Fischer Elektronik - WLK 5
Learn More - IR - JANTXV2N6766 - Transistor, N-CH Mosfet. 200V, 30A, 150WSpecial Price $28.98 Regular Price $48.50
IR - JANTXV2N6766 - Transistor, N-CH Mosfet.
Max voltage: 200V.
Max current: 30Amp.
Dissipation: 150 watt.
Package: TO-3.
Derate >25 degC: -55 to 150 Deg C.
Military/Aerospace
- ONSEMI FAIRCHILD - NDS9948 - Transistor, P Channel FET, Dual. 8 SOIC SMD
ONSEMI FAIRCHILD - NDS9948 - Transistor, P Channel FET, Dual.
Drain Source: -60V.
Drain Current: -2.3Amp @ 25 Deg, 1.8Amp @ 70 Deg.
Dissipation: Single operation: 1.6 watt.
Dual Operation: 2 watt.
Package: 8 SOIC SMD.
From: Manufacture new T/R. P/N: NDS9948.
Operating Temperature: -55 to 150 Deg C.
Note: Enhancement mode.
Learn More - Motorola - 2N7002LT1 - Transistor, N-Ch mosfet.
Motorola - 2N7002LT1 - Transistor, N-Channel MosFet.
Voltage: 60V.
Current: 115mA.
Dissipation: 625mW.
Package: SOT-23-3 SMD.
Package of 100.
High Discounted when purchased by the reel of 3,000 or quantity of 30X100.
Learn More - Zetex - ZVN2106A - Transistor, N Channel Vertical DMOS FET.Out of stock
Zetex - ZVN2106A - Transistor, N Channel Vertical DMOS FET.
Voltage: 60 Vds.
Current: ID (Cont) 450mA.
RDS (on): 2 Ohm.
Dissipation: 700mW.
Operating Temperature: -55 to 150 Deg C.
Package: TO-92, Plastic.
New Old Stock
Note: Enhancement mode.
Learn More - TELEDYNE - 2N4303 - Transistor, N Channel FET. P/N: 2N4303.$1.99Out of stockTransistor, N Channel FET. Max voltage: 30V. Max current: 4mA (10mA max). Dissipation: 300mW. Package: TO-106 ceramic, gold leads. (Similar to TO-18). P/N: 2N4303. Learn More
- TELEDYNE - 2N5197 - Transistor, N Channel FET. P/N: 2N5197.$24.99Transistor, N Channel FET. Dual monolithic. Max Voltage: 50V. Collector current: 50mA. Dissipation: 250mW one side, 500mW both sides. Package: TO-71-6 long gold leads. P/N: 2N5197 Learn More
- SUPERTEX - VN10K - N-CHAN 60V 0.5A 5-OHM PWR FET TO-92Special Price $0.79 Regular Price $1.00N-Channel Enhancement-Mode Vertical DMOS FETs60V 0.5A 5-OHM TO-92 Learn More
- Siliconix - P1087 - P-Channel switch Transistors New TO-92Special Price $2.25 Regular Price $3.00Out of stock-30V Drain 30V Gate 50ma P-Channel switch Transistors New TO-92 Learn More
- Siliconix - 5961-01-015-9884 - Transistor, N-Channel FET.Special Price $3.64 Regular Price $4.85Transistor, N-Channel FET. Voltage: 30V. Current: 10mA. Dissipation: 200mW. Package: TO-92 plastic. Note: Silicon. Military NSN 5961-01-015-9884. Fluke P/N: J2168 and or 386730. Learn More
- Siliconix - 386730 - Transistor, N-Channel FET.Special Price $3.64 Regular Price $4.85Transistor, N-Channel FET. Voltage: 30V. Current: 10mA. Dissipation: 200mW. Package: TO-92 plastic. Note: Silicon. Military NSN 5961-01-015-9884. Fluke P/N: J2168 and or 386730. Learn More
- SILCONIX - SD210 - Transistor, N Channel FET. P/N: SD210.$9.50Transistor, N Channel FET. Max voltage: 30V breakdown. 2V threshold. Max current: 10mA current saturation. Package: TO-72 gold. P/N: SD210. Note: Input capacitance 3.5pF. Leads may have a bit of residual foam that deteriorated and was removed. Learn More
- SEC Samsung Electronics - IRF540 - Transistor, N Channel MOSFET. 100V, 28A, 85W, TO-220
SEC Samsung Electronics - IRF540 - Transistor, N Channel MOSFET. 100V, 28A, 85W, TO-220
The IRF540N is an N-Channel Mosfet. This mosfet can drive loads upto 23A and can support peak current upto 110A. It also has a threshold voltage of 4V, which means it can easily driven by low voltages like 5V. Hence it is mostly used with Arduino and other microcontrollers for logic switching. Speed control of motors and Light dimmers are also possible with this Mosfet since it has good switching characteristics.
Status: Discontinued
Max voltage: 100V.
Max current: 28Amp.
Dissipation: 85 watt.
Package: TO-220.
Operating temperature: -55 to 175 Deg C.
Note: Low gate charge StripFet.
RDS on: 0.55 Ohm.
Alternates: RFP30N06, IRFZ44, 2N3055, IRF3205
Learn More - International Rectifier - IRFP064 - Transistor, 60V, N-Channel Power MOSFET, TO-247AC,
International Rectifier - IRFP064 Transistor, N-Channel Power MOSFET.
Voltage: 60V.
Current: 70 Amp.
Dissipation: 300 watt.
RDS on: 0.009 Ohm.
Operating temperature: -55 to 175 Deg C.
Package: TO-247AC.
Note: Hexfet.
Learn More - IR - IRFD310 - Transistor, N Channel MOSFET. P/N: IRFD310.$0.95Transistor, N Channel MOSFET. Max voltage: 400V. Max current: 0.4 Amp. Dissipation: 1 watt. Package: 4 Dip. P/N: IRFD310. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon gate. RDS on: 3.6 Ohm. Learn More
- INTERSIL - J175 - Transistor, P Channel FET. P/N: J175.$0.59Transistor, P Channel FET. Max voltage: 30V. Max current: 50mA. Dissipation: 350mW. Package: TO-92 plastic. P/N: J175. Derate >25 degC: 3.3mW / Deg C. Please refer to specification sheet for gate source cutoff voltage. Learn More
- Zetex - ZVN2106GTA - Transistor, N CH Mosfet. P/N: ZVN2106GTA.$0.49Transistor, N CH Mosfet. Max voltage: 60V. Max current: 0.71Amp. Package: SOT-223 SMD (4 Pin = 3 plus tab). P/N: ZVN2106GTA. Learn More
- Unidentified MFG - 2N5432 - Transistor, N Channel FET. P/N: PN5432.Special Price $2.63 Regular Price $3.50Transistor, N Channel FET. Breakdown Voltage Vbr:-25V. Gate-Source Cutoff Voltage Vgs(off) Max:-10V. Continuous Drain Current Id:150mA. Gate-Source Breakdown Voltage:-25V. Package: TO-92. P/N: PN5432. Learn More
- Texas Instruments - 2N4858 - Transistor, N Channel FET. P/N: 2N4858.$6.00Transistor, N Channel FET. Max voltage: 40V. Max current: 50mA. Dissipation: 1.8 watt. Package: TO-18. P/N: 2N4858. Operating temperature: -65 to 175 Deg C. Note: Silixon. Depletion, switching. RDS on: 60 Ohm. Learn More
- SML - IRF9140 - Transistor, P Channel MOSFET. P/N: IRF9140.$13.99Out of stock
SML - IRF9140 Transistor, P Channel MOSFET.
Max voltage: 100V.
Max current: 19Amp.
Dissipation: 125 watt.
Package: TO-3 steel (TO-204AA).
Note: RDS on: 0.2 Ohm.
Learn More