Toshiba - MG180V2YS40 - Transistor, IGBT N-Channel. P/N: MG180V2YS40.

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SKU
142383

Toshiba - MG180V2YS40 Transistor, IGBT.

Insulated gate bipolar N-Channel.

Max voltage: 1700V.

Max current: 180Amp.

Dissipation: 1800 watt.

Package: Silicon module.

MG180V2YS40.

Application: half-bridge configuration for multiple-phase motor drive applications.

From: Manufactures box of 9.

Manufactured in Japan.