Toshiba - MG180V2YS40 - Transistor, IGBT N-Channel. P/N: MG180V2YS40.
Special Price
$259.88
Regular Price
$299.99
READY TO SHIP - ONLY 0 LEFT IN STOCK!
SKU
142383
Toshiba - MG180V2YS40 Transistor, IGBT.
Insulated gate bipolar N-Channel.
Max voltage: 1700V.
Max current: 180Amp.
Dissipation: 1800 watt.
Package: Silicon module.
MG180V2YS40.
Application: half-bridge configuration for multiple-phase motor drive applications.
From: Manufactures box of 9.
Manufactured in Japan.
| SKU | 142383 |
|---|---|
| Condition | FN - FACTORY NEW |
| Part Number | MG180V2YS40 |
Transistor, IGBT. Insulated gate bipolar N-Channel. Max voltage: 1700V. Max current: 180Amp. Dissipation: 1800 watt. Package: Silicon module. P/N: MG180V2YS40. Application: half-bridge configuration for multiple-phase motor drive applications. Note: From: Manufactures box of 9. Manufactured in Japan.
