Semiconductors

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 75Amp. Package: Module (2-pack). P/N: 2MBI75N060. Application: Inverter for motor drive. AC and DC servo drive. Uninteruptible power supplies. Industrial machines, such as welding machines. More info: www.fujisemicon-elis.com

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FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT. Power Module. Insulated Gate Bipolar.

Half Bridge IGBT Power Module

Max Voltage: 1200V.

Max Current: 75Amp.

V(BR)CES (V)=1.2kV

(BR)GES (V)=20

I(C) Abs.(A) Collector Current=75

Absolute Max. Power Diss. (W)=480

I(CES) Min. (A)=1.0m

I(GES) Max. (A)=15u

V(CE)sat Max.(V)=2.2

t(d)off Max. (s) Off time=950n

t(f) Max. (s) Fall time.=200n

Package: Module (2-Pack Internal).

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fugi Electric- Factory New Old Stock

Made in Japan

 

 

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Transistor, IGBT, NPN. Max voltage: 600V. Max current: 300Amp. Package: Module. P/N: MG300G1UL1. Note: Silicon, triple diffused. With hardware. Learn More

FUJI ELECTRIC - 7MBR10NE120 -Transistor, IGBT.

Insulated Gate Bipolar.

Max Voltage: 1200V.

Max Current: 10Amp.

Package: Module.

Made in Japan

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

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Toshiba - MG25J1BS11 Transistor, IGBT.

Status: Discontinued

Max voltage: 600V (.6KV).

Max current: 25Amp.

Package: Module with Hardware.

Made in Japan

New Old Stock

 

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Toshiba - MG300M1UK1 Transistor, IGBT.

Max voltage: 1000V (1KV).

Max current: 300Amp.

Package: Module.

Note: Used/Removed from equipment.

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Transistor, IGBT. Max voltage: 1200V. Max current: 300Amp. Package: Module insulated 2-element. P/N: CM300DU24F. Application: High power switching use. AC drive inverters. Servo controls. Used/RFE/removed from equipment. No hardware. Learn More

Transistor, IGBT. Max voltage: 1200V. Max current: 300Amp. Package: Module insulated 2-element. P/N: CM300DU24F. Application: High power switching use. AC drive inverters. Servo controls. Used/RFE/removed from equipment. No hardware. Learn More

IGBT. Voltage: 1,000V. Current: 300Amp. Package: Module, Used/Removed from equipment. Note. Darlington. No hardware. Learn More

Transistors, IGBT. Dual 75Amp 600V. Application: AC motor control. Motion/Servo control. Uninterruptible power supplies. Welding power supplies. Laser power supplies. Case: Module. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 300Amp. Package: Module (2-pack) M217. P/N: 2MBI300L-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Used/RFE/removed from equipment. Learn More

Transistor, IGBT. Max voltage: 600V. Max current: 30Amp. Package: Module. P/N: 7MBR30NE060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

IGBT. Voltage: 1,000V. Current: 300Amp. Package: Module, Used/Removed from equipment. Note. Darlington. No hardware. Learn More

Transistor, intelligent power module. Max voltage: 1200V. Max current: 75Amp. Package: Flat base type insulated. P/N: PM75DSA120. Application: power switching applications. Learn More

Transistor, intelligent power module. Max voltage: 600V. Max current: 300Amp. Package: Flat base type insulated. P/N: PM300DSA060. Application: power switching applications. Learn More

Transistor, MOSIGBT. Max voltage: 500V. Max current: 30Amp. Dissipation: 200 Watt. Package: TO-3 (TO-204). P/N: IXGM30N50A. Note: Time: 800ns. Learn More

EUPEC - FS300R12KE3 - Power Module Transistor, IGBT.

VCES: 1200V.

Current: 300Amp at 80 Deg C.

Current: 500Amp at 25 Deg C.

Dissipation: 1.45kW (1450 Watt).

Package: Module/Econopack.

Mounting Style: Screw.

Maximum operating temperature: 125 Deg C.

Factory New.

Alternate: FS300R12KE3BOSA1

 

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Transistor, IGBT. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. No hardware. Learn More

OnSemiconductor Fairchild  - HGT1N30N60A4D - Transistor, IGBT.

30A 600V MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Status: Discontinued

Manufacturer: Onsemiconductor /Fairchild         

Product Category: Motor / Motion / Ignition Controllers & Drivers            

Operating Temperature: - 55 C to + 150 C             

Mounting Style: SMD/SMT          

Package / Case: SOT-227-4          

Dimensions: Height: 9.6 mm, Length: 38.2 mm

Series: SPM 3    

Width: 25.04 mm            

Pd - Power Dissipation: 225 W   

Product Type: Motor / Motion / Ignition Controllers & Drivers    

Part # Aliases: HGT1N30N60A4D_NL       

Unit Weight: 1.058219 oz

 

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