Semiconductors
Semiconductor Components
At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.
Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.
Find the semiconductor component you need in our selection below.
- National Semiconductor Corp - 2N3993 - Transistor, P Channel FET. P/N: 2N3993.$20.00Transistor, P Channel FET. Max voltage: 25V. Max current: 10mA. Dissipation: 300mW. Package: TO-72 gold. P/N: 2N3993. Note: RDS on: 150 Ohm. Operating temperature: -55 to 175 Deg C. Learn More
- National Semiconductor Corp - 2N3386 - Transistor, P Channel FET. P/N: 2N3386.$5.00Transistor, P Channel FET. Max voltage: 30V. Max current: 50mA. Dissipation: 300mW. Package: TO-18 gold leads. P/N: 2N3386. Learn More
- National Semiconductor Corp - 2N3368 - Transistor, N Channel FET. P/N: 2N3368.$10.00Transistor, N Channel FET. Max voltage: 40V. Max current: 10mA. Dissipation: 300mW. Package: TO-18 gold leads. P/N: 2N3368. Learn More
- National Semiconductor Corp - 2N5047 - Transistor, Dual N CH Fet. P/N: 2N5047.$15.00Transistor, Dual N CH Fet. Max voltage: -50V. Max current: 30mA. Dissipation: 400mW. Package: TO-71 gold leads. P/N: 2N5047. Learn More
- Motorola - MTP36N06V - Transistor, N CH TMOS Fet. P/N: MTP36N06V.$8.99Transistor, N CH TMOS Fet. Max voltage: 60V. Max current: 32 Amp. Dissipation: 90 watt. Package: TO-220AB. P/N: MTP36N06V. Operating temperature: -55 to 175 Deg C. Note: Enhancement mode. RDS on: 0.04 Ohm. Learn More
- Motorola - MTM3N60 - Transistor, N Channel FET. P/N: MTM3N60.$25.00Transistor, N Channel FET. Max voltage: 600V. Max current: 3 Amp. Dissipation: 75 watt. Package: TO-3 steel. P/N: MTM3N60. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. RDS on: 2.5 Ohm @ 1.5 Amp. Learn More
- Motorola - MTW14N50E - Transistor, N Channel FET. P/N: MTW14N50E.$9.50Transistor, N Channel FET. Max voltage: 500V. Max current: 14Amp. Dissipation: 180 watt. Package: TO-247. New. P/N: MTW14N50E. Note: High Voltage. TMOS enhancement mode silicon gate. RDS on 0.40 Ohm. Learn More
- Motorola - MTP40N06M - Transistor, N CH TMOS Sensefet. P/N: MTP40N06M.$10.00Transistor, N CH TMOS Sensefet. Max voltage: 60V. Max current: 40 Amp. Dissipation: 125 watt. Package: TO-220-5 staggered leads. P/N: MTP40N06M. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon gate. RDS on: 0.04 Ohm. Learn More
- Motorola - MPF4861A - Transistor, N Channel FET. P/N: MPF4861A.$3.00Transistor, N Channel FET. Max voltage: 30V. Max current: 80mA. Dissipation: 360mW. Package: TO-92 plastic. P/N: MPF4861A. Learn More
- Motorola - MTP3055EL - Transistor, N CH TMOS Fet. P/N: MTP3055EL.$3.50Transistor, N CH TMOS Fet. Max voltage: 60V. Max current: 12 Amp. Dissipation: 40 watt. Package: TO-220AB. P/N: MTP3055EL. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode. RDS on: 0.15 Ohm. Learn More
- Motorola - MMFT3055EL - TMOS FET Transistors 1.5 AMP 60V 2-SMD. Package of 7.$3.50Transistor, N-Chl TMOS FET. Max voltage: 60V. Max current: 1.5 Amp. Dissipation: 0.8 watt. Gain: 0.18 Ohm. Package: SOT-223 SMD, 2 pin (Manuf 3pin with middle lead removed). P/N: MMFT3055EL. Note: N-Channel enhancement mode silicon gate. Operating temperature -65 to 150 DegC. Package of 7. Learn More
- Motorola - J176 - Transistor, P Channel FET. P/N: J176.$1.99Transistor, P Channel FET. Max voltage: 30V. Max current: 50mA. Dissipation: 350mW. Package: TO-92 plastic. P/N: J176. Derate >25 degC: 3.3mW / Deg C. Please refer to specification sheet for gate source cutoff voltage. Learn More
- Motorola - J177 - Transistor, P Channel FET. P/N: J177. Cut.Special Price $0.89 Regular Price $1.95Motorola - J177 - Transistor, P Channel FET. Max voltage: 30V. Max current: 50mA. Dissipation: 350mW. Package: TO-92 Plastic Cut and Formed leads. Derate >25 deg C: 3.3mW / Deg C. Please refer to specification sheet for gate source cutoff voltage. Note: Cut and Formed Leads Learn More
- Motorola - J309 - Transistor, N Channel JFET, TO-92, UHF/VHF Amplifier$0.98 As low as $0.79IN STOCK - MORE THAN 100 READY TO SHIP!
Motorola - J309 Transistor.
Type Designator: J309
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.625 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 4 V
Maximum Drain Current |Id|: 0.03 A
Maximum Junction Temperature (Tj): 150 °C
Package: TO-92, Gold Leads
Max current: 10mA.
Applications: UHF/VHF Amplifier. Oscillators. Mixers..
Cross Reference potential substitutions: (Confirm specifications for your application)
BF246B, J105, J106, J107, J309, PF5103, PN4091, PN4861, TIS73
- Motorola - 2N4857 - Transistor, N Channel FET. 40V 50mA 1.8W.Special Price $3.74 Regular Price $4.99Transistor, N Channel FET. Max voltage: 40V. Max current: 50mA. Dissipation: 1.8 watt. Package: TO-18. P/N: 2N4857. Note: Silicon. RDS on: 40 Ohm. Learn More
- Motorola - 2N4858 - Transistor, N Channel FET. P/N: 2N4858.$6.00Transistor, N Channel FET. Max voltage: 40V. Max current: 50mA. Dissipation: 1.8 watt. Package: TO-18. P/N: 2N4858. Operating temperature: -65 to 175 Deg C. Note: Silicon. Depletion, switching. RDS on: 60 Ohm. Learn More
- Motorola - 2N4092 - Transistor, N CH FET. P/N: 2N4092.Special Price $3.98 Regular Price $6.50
Motorola - 2N4092 Transistor, N CH FET.
Status: Discontinued
Voltage: 40V.
Current: 10mAdc.
Dissipation: 0.36 watt.
Operating Temperature: -65 to 175 Deg C.
Package: TO-18-3 Gold leads.
Learn More - Motorola - 2N4220 - Transistor, N Channel FET. P/N: 2N4220.Special Price $6.75 Regular Price $9.00Transistor, N Channel FET. Max voltage: -30V. Max current: 10mA. Package: TO-72-4 metal. P/N: 2N4220. Derate >25 degC: 2.0mW/Deg C. Operating temperature: -55 to 175 Deg C. Application: Amplifier, switch. Note: Silicon. Learn More
- International Rectifier - IR - IRF9521 - Transistor, P Channel FET. P/N: IRF9521.READY TO SHIP - ONLY 26 LEFT IN STOCK!
International Rectifier - IR - IRF9521 Transistor, P Channel power FET.
Metal-Oxide Semiconductor
Max voltage: 60V.
Max current: 6Amp.
Operating Temp: 150 C
Package: TO-220AB.
Note: Enhancement mode vertical DMOS.
RDS on: 0.60 Ohm.
Learn More - INTERSIL - 2N4044 - Transistor, N CH FET. P/N: 2N4044.$15.00Transistor, N Channel FET. Package: TO-99-6. Note: Learn More
- IR - IRFAG42 - Transistor FET 125W 1,000Vds TO-3 steelSpecial Price $49.95 Regular Price $69.89Transistors. 125W 1,000V High voltage MOS power N-channel FET. 1,000Vds Rds(on):4.2-ohm, max. Id:3.6A. Pd:125W. Package: Steel TO-3, TO-204AA. Learn More
- IR - IRF1010E - Transistor, N Channel FET. P/N: IRF1010E.$2.25Transistor, N Channel FET. Max voltage: 60V. Max current: 75Amp. Dissipation: 140 watt. Package: TO-220. P/N: IRF1010E. Note: Hexfet. RDS on 8.5 mOhm. Learn More
- IR - IRFD9210 - Transistor, P Channel HEXFET. P/N: IRFD9210.$0.95Transistor, P Channel HEXFET. Max voltage: 200V. Max current: 0.4 Amp. Dissipation: 1 watt. Package: 4 Dip. P/N: IRFD9210. Operating temperature: -55 to 150 Deg C. Note: RDS on: 3 Ohm. Learn More
- IR - IRFD9010 - Transistor, P Channel HEXFET, 50V, 1.1A, 1W, 4Pin DIp
IR - IRFD9010 - Transistor, P Channel HEXFET.
Max voltage: 50V.
Max current: 1.1 Amp.
Dissipation: 1 watt.
Package: 4 Dip.
Operating temperature: -55 to 150 Deg C.
Note: RDS on: 0.5 Ohm.
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