Transistors

Transistor, dual darlington. Max voltage: 1000V. Max current: 50Amp. Package: Module. P/N: QCA50AA100. Application: Motor control. AC and DC servo. UPS. Switching power supply. Ultrasonic. Used/RFE/removed from equipment. No hardware. Learn More

Transistor, Dual darlington. Max voltage: 600V. Max current: 30Amp. Dissipation: 250 watt. Package: Module. Used/Removed from equipment. P/N: QCA30B60. Operating temperature: -40 to 150 Deg C. Application: Motor control, AC/DC servo, UPS, switching power supply, ultrasonic applications. Note: Series connected high-speed, high-power. Each transistor has a reverse paralleled fast recovery diode. Used/Removed from equipment. Learn More

Transistor, NPN. Max voltage: 400VCER, 700VCB. Max current: 2.5Amp. Dissipation: 100Watt. Package: heavy TO-3 steel. P/N: STI425. Note: Used/Removed from equipment. Cross DTS-425. High Voltage. Learn More

Transistor, NPN. Voltage: 80V. Power: 1.2Amp. Dissipation: 800mW. Package: TO-5 long gold leads. P/N: 2N3036. Note: Silicon. Bipolar. Military NSN 5961-00-900-4818. Learn More

Transistor, PNP. Voltage: -45V. Current: -100mAdc. Dissipation: 340mW. Operating temperature: -65 to 150 Deg C. Package: TO-18 gold leads. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 40VCEO, 50VCBO. Max current: 200mA. Dissipation: 350mW. Package: TO-18. P/N: BCY70. Operating temperature: -65 to 200 Deg C. Note: Switching transistor. Silicon planar epitaxial. Learn More

Transistor, NPN. Max voltage: 32V. Max current: 200mA. Dissipation: 390mW. Package: TO-18. P/N: BCY59. Operating temperature: -65 to 200 Deg C. Note: Switching transistor. Silicon planar epitaxial. Learn More

5961-01-112-8087 NEW NPN 50 WATT High Voltage Silicon High Power Transistors 800.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 600.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE CURRENT RATING PER CHARACTERISTIC 0.50 MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN MIL TO-3 HVY STEEL Learn More

Transistor, NPN. Max voltage: 80VCEO, 100VCBO. Max current: 3Amp. Dissipation: 30 watt. Package: TO-111 Stud 3 leads, all gold. P/N: 2N4075. Learn More

Transistor, PNP. Voltage: 45VCEO, 60VEBO. Current: 3 Amp. Gain: 44. Freq: 0.75MHz. Package: TO-5. P/N: 2N1186. Note: alloy-junction germanium. Learn More

SGS - TIP137 - Transistor, PNP.

Voltage: 100V.

Current: 8Amp.

Dissipation: 70 watt.

Operating temperature: -65 to 150 Deg C.

Package: TO-220.

Note: Silicon darlington.

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Transistor, NPN. Max voltage: 120V. Max current: 1Amp. Dissipation: 1 watt. Package: TO-202. P/N: 2SD600K. Note: Epitaxial silicon planar. Marked D600K. Learn More

Transistor, NPN. Max voltage: 600Vceo,1500Vcbo. Max current: 3.5Amp. Dissipation: 50 Watt. Package: (TO-3PML) Similiar to TO-218. Note: High speed switching with built in damper diode. Learn More

Transistor, NPN. Max voltage: 150VCEO, 200VCBO. Max current: 5 Amp. Dissipation: 100 watt. Package: TO-3. P/N: 2SC1829. Note: Silicon. Used, has heatsink compound. Learn More

Transistor, PNP. Voltage: -40VCEO, 60VCBO. Current: -0.6Amp. Dissipation: 1.8 watt. Operating temperature: -65 to 200 Deg C. Package: TO-18 (TO206AA) metal. Note: Silicon planar epitaxial. Switching. Learn More

Semiconductor Technology Inc - 2N3720 MIL HOUSE Transistor, PNP.

Max Voltage: 60VCE.

Max Current: 3Amp.

Dissipation: 6 watt.

Package: TO-39. 

Application: High-speed switching, Drivers Switches Medium-Power Amplifiers, Medium Current Switching, High-Frequency Amplifiers.

Note: Silicon.

Military NSN 5961-00-154-0110.

Marked house number ST2845/723047-1.

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Transistor, PNP. Max voltage: 105V. Max current: 200ma. Dissipation: 150mW. Package: TO-5. P/N: 2N398A. Note: Germanium, alloy junction. Learn More

SEM - 2N604 - Transistor, PNP Germanium

Type Designator: 2N604

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.015 A

Max. Operating Junction Temperature (Tj): 90 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Package: TO5

Note: Germanium.

Manuf: SEMICONDUCTOr TECHNOLOGY.

NSN 5961-00-846-9156

New Old Stock

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Transistor, NPN. Max voltage: 80V. Max current: 5 Amp. Dissipation: 2 watt @ 25 Deg C, 25 watt @ 100 Deg C. Package: TO-24 (TO-213AA), similar to TO-66. P/N: JANTX2N6352. Operating temperature: -65 to 200 Deg C. Application: Designed for use in industrial-military power amplifier and switching circuits. Note: Silicon darlington. Military JANTX, marked JX2N6352. Learn More

Transistor, PNP. Voltage: 30V. Current: 50mA. Dissipation: 250mW. Package: TO-5. P/N: 2N1036. Note: Silicon. Learn More

Transistor, NPN. Max voltage: 800VCEO, 1200VCBO. Max current: 3Amp. Dissipation: 80 watt. Package: TO-218 (TO-3P). P/N: 2SC4235. Learn More

Transistor, PNP. Dual. Max Voltage: 45V. Collector current: 10mA. Dissipation: 250mW one side, 500 mW both sides. Package: TO-78. P/N: 2N5117. Note: Dielectrically isolated dual PNP general purpose amplifier. Learn More

Transistor, NPN. Max voltage: 800VCEO, 1100VCBO. Max current: 25 Amp. Dissipation: 300 watt. Package: TO-218 (TO-3BPL). P/N: 2SC3994. Storage temperature: -55 to 150 Deg C. Application: High speed switching regulator. Note: Silicon triple diffused planar. Learn More

Transistor, NPN. Max voltage: 800VCEO, 1200VCBO. Max current: 8Amp. Dissipation: 140 watt. Package: TO-218 (TO-3P). P/N: 2SC3643. Application: Very high-definition display horizontal deflection output. Note: Triple diffused silicon planar. Learn More