Transistors

Transistor, NPN. Max voltage: 30VCEO, 40VCBO. Max current: 1 Amp. Dissipation: 1 watt. Package: TO-92 tab. P/N: 2N6714. Operating temperature: -55 to 200 Deg C. Note: Silicon planar. Learn More

National Semiconductor Corp - 2N4401 Transistor, NPN.

Voltage: 40VCEO, 60VCBO.

Current: 600mAdc.

Dissipation: 200mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Package of 10

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National Semiconductor Corp - 2N2192A - Transistor, NPN Bipolar.

Status: Discontinued

Medium Power Amp.

Max Voltage: 40V.

Max Current: 1Amp.

Dissipation: 0.8 watt.

Package: TO-39 Gold Leads. 

Genuine Vinatge National Semiconductor - New Old Stock - Rare

Alternates: BC140XV1, BFR18, BSX96, 40348

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Transistor, NPN. Max voltage: 15VCE, 40VCB. Max current: 100mA. Dissipation: 280mW. Package: TO-18 gold leads. P/N: 2N4275. Note: Silicon. With blue test dots. Learn More

National Semiconductor Corp - 2N3020 - Transistor, NPN.

Max voltage: 80VCEO, 140VCBO.

Max current: 1Amp.

Package: TO-92.

Note: Silicon planar epitaxial.

Marked TN3020.

Genuine National Semiconductor - New Old Stock

NSN 5961-00-400-6242

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National Semiconductor Corp - 2N3645 - Transistor, PNP.

Status: Discontinued

Max Voltage: 60V.

Max Current: 500mA.

Dissipation: 300mW.

Package: TO-105 (TO-39).

Genuine National Semiconductor  Vintage - New Old Stock

NSN 5961-00-929-2857, FSCM 07263

Alternate: NTE129.

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Transistor, NPN. Voltage: 50V. Current: 0.5Amp. Dissipation: 6.25mW. Operating temperature: -55 to 150 Deg C. Package: TO-198, similar to a TO-220 and can be formed to a TO-5 pin configuration. Note: Silicon darlington, high gain. Learn More

National Semiconductor - ERC2N3053 Transistor, NPN.

On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division. 

Max voltage: 40VCEO, 60VCBO.

Max current: 700mA.

Dissipation: 5 watt.

Operating temperature: -65 to 200 Deg C.

Package: TO-39.

Note: Silicon planar.

Genuine Vintage National Semiconductor - New Old Stock - Rare

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Transistor, PNP. Max voltage: 100VCEO, 5VCBO. Max current: 1 Amp. Dissipation: 30 watt. Gain: 3MHz. Package: TO-220. P/N: TIP30C. Application: Medium power linear switching applications. Note: Epitaxial silicon. Junction temperature: 150 Deg C. Storage temperature: -65 to 150 Deg C. Learn More

Motorola - TIP30B Transistor, PNP.

Max voltage: 80VCEO, 5VCBO.

Max current: 1 Amp.

Dissipation: 30 watt.

Gain: 3MHz.

Package: TO-220.

Application: Medium power linear switching applications.

Note: Epitaxial silicon.

Junction temperature: 150 Deg C. Storage temperature: -65 to 150 Deg C.

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Motorola - TIP125 - Transistor, PNP Darlington.

Max voltage: 60V.

Max current: 5Amp.

Package: TO-220

Note: Operating temperature: -65 to 150 Deg C. 

Application: General Purpose Amplifier and Low Speed Switching Spplications.

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Transistor, PNP. Max voltage: 70V. Max current: 10Amp. Dissipation: 90 watt. Package: TO-3 steel. P/N: SP1801. Note: Germanium. Learn More

Transistor. Package: TO-225AA (TO-106) formed leads. P/N: SJE5116. Package of 10. Note: Cross MJE5116 house numbered marked S5116. Learn More

Motorola - ULN2803A IC. Transistor Array.

Status: Discontinued

Eight darlingtons with common emitters.

Mfr Package Description: PLASTIC, CASE 707, DIP-18

Collector Current-Max (IC): 0.5 A

Collector-emitter Voltage-Max: 50.0 V

Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Operating Temperature-Max; 125.0 C

Polarity/Channel Type; NPN

Terminal Position; DUAL

Transistor Application: SWITCHING

Transistor Element Material:  SILICON

VCEsat-Max: 1.6 V

Input resistor: 2.7K Ohm.

Package: 18 Dip.

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Motorola - TIP34B Transistor, PNP.

Max voltage: 80V.

Max current: 10 Amp.

Dissipation: 80 watt.

Gain: 3MHz.

Package: TO-247.

Application: power amplifiers and switching applications.

Note: Silicon high power.

Operating/storage temperature: -65 to 150 Deg C.

 

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Transistor, NPN Silicon. Max voltage: 60V. Max current: 15 Amp. Dissipation: 90 watt. Package: TO-218. P/N: TIP3055. Note: Operating temperature: -65 to 150 DegC. Package of 2. Learn More

Transistor, NPN. Max voltage: 100V. Max current: 6Amp. Dissipation: 65 watt. Package: TO-220. P/N: TIP41C. Operating temperature: -65 to 150 Deg C. Note: Silicon. Learn More

Transistor, N Channel Fet. Max voltage: 30V. Max current: 10mA. Dissipation: 175mW. Package: TO-72-4 hermetically sealed, gold leads. Inclosure material: glass. P/N: SFE265U1. Derate >25 degC: Operating temperature: 200 Deg C. Note: Silicon. Military NSN 5961-00-501-1100. Military Alt P/N: 352-0756-012. Learn More

Transistor, PNP. Max voltage: 40VCEO. Max current: 3Amp. Dissipation: 40 watt. Package: TO-220 manufactures formed leads. P/N: TIP32. Note: Silicon epitaxial. Learn More

Transistor, NPN silicon. Max voltage: 80V. Max current: 25Amp. Dissipation: 125 watt. Package: TO-218. P/N: TIP35B. Note: High power. Note: Used/Removed from equipment, with full leads. Learn More

Transistor, NPN. Voltage: 60V. Current: 2Amp. Dissipation: 50 watt. Operating temperature: -65 to 150 deg C. Package: TO-220, cut and formed leads. Note: Silicon darlington. Learn More

IC. Transistor array. Eight darlingtons with common emitters. Output voltage to 50V. Output current to 500mA. Input resistor: 2.7K Ohm. Package: 18 Dip. Used/Removed from sockets. Learn More

Transistor, NPN. Marked 8278503-IBM and marked 498. Package: TO-3 steel. Learn More

Transistor, PNP. Voltage: 60V. Current: 2Amp. Dissipation: 50 watt. Operating temperature: -65 to 150 deg C. Package: TO-220, cut 1/4" leads. Note: Silicon darlington. Learn More