Transistors

MATSUSHITA - M57962B IGBT GATE DRIVER

12-SIP CERAMIC NEWSPEX ON Page-183

NEWARK #114

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IXYS - IXGT30N60B - Transistor, IGBT, HiPer Fast. Status: Discontinued Transistor, IGBT, HiPerFast. Max voltage: 600V. Max current: 70Amp. Package: TO-268 SMD. Operating temperature: -55 to 150 Deg C. Application: PFC circuits, UPS, AC motor control, DC servo and robot drives and DC choppers. Note: Optimized for 10-25 KHz hard switching and up to 150KHZ resonant switching. Learn More

International Rectifier - IRFP064 Transistor, N-Channel Power MOSFET.

Voltage: 60V.

Current: 70 Amp.

Dissipation: 300 watt.

RDS on: 0.009 Ohm.

Operating temperature: -55 to 175 Deg C.

Package: TO-247AC.

Note: Hexfet.

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IR - G4BC30KD Transistor, IGBT.

Status: Discontinued

Insulated gate bipolar.

Max voltage: 600V.

Max current: 16Amp.

8-25 KHz

Package: TO-220.

Note: Ultra-fast soft recovery diode.

Genuine International Rectifier - New Old Stock - Difficult Transistor/IGBT to Find

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International Rectifier - IRG4BC20UD - Transistor, IGBT.

Max voltage: 600V.

Max current: 13Amp @ 25 Deg C, continuous.

Dissipation: 60W @ 25 Deg C, 24W @ 100 Deg C.

Package: TO-220.

Operating temperature: -55 to 150 Deg C.

Note: Ultra-Fast soft recovery.

Insulated gate bipolar transistor.

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Transistor, N Channel MOSFET. Max voltage: 400V. Max current: 0.4 Amp. Dissipation: 1 watt. Package: 4 Dip. P/N: IRFD310. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon gate. RDS on: 3.6 Ohm. Learn More

TO-3 steel NEW 94-0051 Hughes Aircraft Stamped 5727461-1

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Transistor, P Channel FET. Max voltage: 30V. Max current: 50mA. Dissipation: 350mW. Package: TO-92 plastic. P/N: J175. Derate >25 degC: 3.3mW / Deg C. Please refer to specification sheet for gate source cutoff voltage. Learn More

Transistor. Hewlett Packard P/N: 1855-0677. Package: TO-220. Possible cross: STP4046T. Learn More

Transistor, NPN. Max voltage: 400VCEO, 850VCEV. Max current: 8 Amp. Dissipation: 125 watt. Package: TO-3 (TO-204AA) steel. P/N: 2N6545. Operating temperature: -65 to 200 Deg C. Note: Silicon, switchmode series. High Voltage. Learn More

NPN HI SPEED 10Amp 60Watt 100Vcbo 80Vceo New TO-3 Learn More

Transistor, NPN. Max voltage: 25VCES, 10VEBO. Max current: 300mA. Dissipation: 625mW. Package: TO-92 plastic. P/N: MPSD04. Operating temperature: -55 to 150 Deg C. Application: High gain driver. Package of 20. Note: Darlington silicon planar. Marked House # GE 940011. Learn More

Transistor, unijunction? Package: TO-92 New bulk. Learn More

General Electric - MPSA14 - Transistor, NPN.

Voltage: 30V.

Current: 500mAdc.

Dissipation: 625mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Note: Silicon darlington.

Alternate: NTE46.

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Transistor, IGBT. Max voltage: 1200V. Max current: 150Amp. Package: Module M215 (2-pack). P/N: 2MBI150F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Used/RFE/removed from equipment. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 15Amp. Package: Module (6-pack) M604. P/N: 6MBI15F-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Max voltage: 600V. Max current: 50Amp. Package: Module (2-pack) M218. P/N: 2MBI50F-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Note: New. No hardware. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 300Amp. Package: Module (2-pack) M217. P/N: 2MBI300L-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Used/RFE/removed from equipment. Learn More

Transistor, IGBT. Max voltage: 600V. Max current: 30Amp. Package: Module. P/N: 7MBR30NE060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1000V. Max current: 50Amp. Package: Module M204 (2-pack). P/N: 2DI50Z-100. Application: High power switching. AC and DC motor controls. Uninterruptible power supplies. Learn More

OnSemiconductor FAIRCHILD - FGB30N6S2 - 600V SMPS II Series N-Channel IGBT TO-263/D2PAK

Status: Discontinued

Collector Emitter Breakdown Voltage: 600 V

Collector Emitter Saturation Voltage: 2 V

Collector Emitter Voltage (VCEO): 600 V

Current Rating: 45 A

Element Configuration: Single

Max Collector Current: 45 A

Operating Temperature: -55 °C to 150 °C

Max Power Dissipation: 167 W

Min Operating Temperature      

Power Dissipation: 167 W

Rise Time: 10 ns

Voltage Rating (DC): 600 V

Package (SMD TO-220/2 NO TAB)

BULK NEW

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Transistor, IGBT N Channel. Max voltage: 600Vces. Max current: 28 Amp @ 25 Deg C, 13 Amp @ 110 Deg C. Dissipation: 125 watt. Package: TO-263/D2PAK . P/N: FGB20N6S2. Note: Series: SMPS II. Operating temperature: -55 to 150 Deg C. Learn More