Transistors

Matsushita / Panasonic - M57962L - 12-Ceramic SIP IGBT Gate Driver, New The Matushita / Panasonic M57962L Single In-line Hybrid IC for driving high speed devices designed to convert logic level control signals into optimal IGBT gate drive. Input signals are isolated from the IGBT drive using high speed optocouplers with 15,000V/ms. Mitsubishi IGBT drivers are designed to provide the pulse currents necessary for high performance switching applications and to maintain sufficient off bias to guarantee ruggedness. Hybrid IGBT drivers simplify gate drive design by minimizing the number of components required. The M57962L provides short-circuit protection. M57962L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates as an isolation amplifier for these modules and provides the required electrical isolation between the input and output with an opto-coupler. Short circuit protection is provided by a built in desaturation detector. A fault signal is provided if the short circuit protection is activated. Status: Discontinued 12-SIP CERAMIC Max Operating Temperature: 60 °C Min Operating Temperature: -20 °C Min Supply Voltage: 14 V Peak Output Current: 5 Amps Operating Supply Voltage: 15 V Dimensions: Height - Seated (Max): 25 mm Made in Japan No Counterfeit – No China - No Delays – No Disappointments, Learn More

IXYS - IXGT30N60B - Transistor, IGBT, HiPer Fast. Status: Discontinued Transistor, IGBT, HiPerFast. Max voltage: 600V. Max current: 70Amp. Package: TO-268 SMD. Operating temperature: -55 to 150 Deg C. Application: PFC circuits, UPS, AC motor control, DC servo and robot drives and DC choppers. Note: Optimized for 10-25 KHz hard switching and up to 150KHZ resonant switching. Learn More

International Rectifier - IRFP064 Transistor, N-Channel Power MOSFET.

Voltage: 60V.

Current: 70 Amp.

Dissipation: 300 watt.

RDS on: 0.009 Ohm.

Operating temperature: -55 to 175 Deg C.

Package: TO-247AC.

Note: Hexfet.

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IR - G4BC30KD Transistor, IGBT.

Status: Discontinued

Insulated gate bipolar.

Max voltage: 600V.

Max current: 16Amp.

8-25 KHz

Package: TO-220.

Note: Ultra-fast soft recovery diode.

Genuine International Rectifier - New Old Stock - Difficult Transistor/IGBT to Find

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International Rectifier - IRG4BC20UD - Transistor, IGBT.

Max voltage: 600V.

Max current: 13Amp @ 25 Deg C, continuous.

Dissipation: 60W @ 25 Deg C, 24W @ 100 Deg C.

Package: TO-220.

Operating temperature: -55 to 150 Deg C.

Note: Ultra-Fast soft recovery.

Insulated gate bipolar transistor.

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Transistor, N Channel MOSFET. Max voltage: 400V. Max current: 0.4 Amp. Dissipation: 1 watt. Package: 4 Dip. P/N: IRFD310. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon gate. RDS on: 3.6 Ohm. Learn More

TO-3 steel NEW 94-0051 Hughes Aircraft Stamped 5727461-1

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Transistor, P Channel FET. Max voltage: 30V. Max current: 50mA. Dissipation: 350mW. Package: TO-92 plastic. P/N: J175. Derate >25 degC: 3.3mW / Deg C. Please refer to specification sheet for gate source cutoff voltage. Learn More

Transistor. Hewlett Packard P/N: 1855-0677. Package: TO-220. Possible cross: STP4046T. Learn More

Transistor, NPN. Max voltage: 400VCEO, 850VCEV. Max current: 8 Amp. Dissipation: 125 watt. Package: TO-3 (TO-204AA) steel. P/N: 2N6545. Operating temperature: -65 to 200 Deg C. Note: Silicon, switchmode series. High Voltage. Learn More

NPN HI SPEED 10Amp 60Watt 100Vcbo 80Vceo New TO-3 Learn More

Transistor, NPN. Max voltage: 25VCES, 10VEBO. Max current: 300mA. Dissipation: 625mW. Package: TO-92 plastic. P/N: MPSD04. Operating temperature: -55 to 150 Deg C. Application: High gain driver. Package of 20. Note: Darlington silicon planar. Marked House # GE 940011. Learn More

Transistor, unijunction? Package: TO-92 New bulk. Learn More

General Electric - MPSA14 - Transistor, NPN.

Voltage: 30V.

Current: 500mAdc.

Dissipation: 625mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Note: Silicon darlington.

Alternate: NTE46.

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Transistor, IGBT. Max voltage: 1200V. Max current: 150Amp. Package: Module M215 (2-pack). P/N: 2MBI150F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Used/RFE/removed from equipment. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 15Amp. Package: Module (6-pack) M604. P/N: 6MBI15F-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Max voltage: 600V. Max current: 50Amp. Package: Module (2-pack) M218. P/N: 2MBI50F-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Note: New. No hardware. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 300Amp. Package: Module (2-pack) M217. P/N: 2MBI300L-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Used/RFE/removed from equipment. Learn More

Transistor, IGBT. Max voltage: 600V. Max current: 30Amp. Package: Module. P/N: 7MBR30NE060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1000V. Max current: 50Amp. Package: Module M204 (2-pack). P/N: 2DI50Z-100. Application: High power switching. AC and DC motor controls. Uninterruptible power supplies. Learn More

OnSemiconductor FAIRCHILD - FGB30N6S2 - 600V SMPS II Series N-Channel IGBT TO-263/D2PAK

Status: Discontinued

Collector Emitter Breakdown Voltage: 600 V

Collector Emitter Saturation Voltage: 2 V

Collector Emitter Voltage (VCEO): 600 V

Current Rating: 45 A

Element Configuration: Single

Max Collector Current: 45 A

Operating Temperature: -55 °C to 150 °C

Max Power Dissipation: 167 W

Min Operating Temperature      

Power Dissipation: 167 W

Rise Time: 10 ns

Voltage Rating (DC): 600 V

Package (SMD TO-220/2 NO TAB)

BULK NEW

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Transistor, IGBT N Channel. Max voltage: 600Vces. Max current: 28 Amp @ 25 Deg C, 13 Amp @ 110 Deg C. Dissipation: 125 watt. Package: TO-263/D2PAK . P/N: FGB20N6S2. Note: Series: SMPS II. Operating temperature: -55 to 150 Deg C. Learn More