Transistors

Transistor, NPN. 125V 2Amp 40 watt, high power. Package: TO-66 steel. New. Note: Cross S5012. Learn More

IC. High low side transistor driver. Package: 14 Dip. New, tubed. Learn More

Intersil - Harris - CA3083 Transistor, NPN. Array.

Five independent transistors plus separate substrate connection.

Package: 16 Dip.

New

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Transistor, 2-Pack BJT. Max voltage: 1200V. Max current: 75Amp. Package: Module M209. P/N: 2DI75Z-120. Note: High Voltage. Used/Removed from equipment. No hardware. Learn More

Transistor, P Channel. Max voltage: 60V. Max current: 180mA. Dissipation: 360mW. Package: SOT-23 SMD. P/N: NDS0605. Learn More

Transistor, NPN. Max voltage: 900V. Max current: 3Amp. Dissipation: 50 watt. Package: TO-3 steel. New. P/N: DTS-708. Note: Silicon. High Voltage. Learn More

Boca Semiconductor Corp - 2N930A - Transistor, NPN. TO-18, Low Noise, Low Signal Amplifier. The product is a lot of 2 Boca Semiconductor 2N930A 45V NPN silicon amplifier transistors in TO-18 package. These transistors are designed for small signal amplification, with a maximum collector-emitter voltage of 45V and maximum base-emitter voltage of 6V. Manufactured in the United States, their minimum operating temperature is -55 °C and maximum operating temperature is 200 °C. With a maximum power dissipation of 300 mW and maximum collector-emitter saturation voltage of 1V, these low noise transistors are suitable for various electronic applications requiring precise amplification. Boca Semiconductor Corp - 2N930A Transistor, NPN. Technology: Si (Silicon) Mounting Style Through Hole Package / Case: TO-18-3 (TO-206AA) Transistor Polarity: NPN Maximum DC Collector Current: 30 mA Collector- Emitter Voltage VCEO Max: 45 V Collector- Base Voltage VCBO: 60 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Pd - Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 200 C Packaging: Bulk Product Type: BJTs - Bipolar Transistors Max voltage: 45VCEO, 60VCBO. Max current: 30mA. Dissipation: 600mW. Application: Low Noise, Low Level amplifier. Alternates: Mouser 494-2N930A, Newark 36AJ2812, Genuine Boca Semiconductor Made in USA New Old Stock Learn More

Transistor, NPN. Max voltage: 40V. Max current: 700mA. Dissipation: 1 watt. Package: TO-39 Metal. New. P/N: 40317. Note: Silicon. Learn More

Motorola - 2N6296 - Transistor, PNP.

Status: Discontinued

Voltage: 60V.

Current: 4 Amp.

Dissipation: 50 watt.

Operating Temperature: -65 to 200 Deg C.

Package: TO-66. Steel

Note: Silicon Darlington.

New Old Stock

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Motorola - 2N6294 - Transistor, NPN.

Voltage: 60V.

Current: 4 Amp.

Dissipation: 50 watt.

Operating Temperature: -65 to 200 Deg C.

Package: TO-66. Steel

Note: Silicon Darlington.

New Old Stock

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CRP - JANTX2N918 Transistor, NPN.

Status: Discontinued

Small Signal Transistor

Voltage: 15VCEO, 30VCBO.

Current: 50mAdc.

Dissipation: 200mW.

Bands: UHF, VHF

Package: TO-72-4 Gold Leads.

Note: RF/IF oscillator.

Silicon.

Military NSN 5961-00-836-6663.

Proudly Made in USA

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TO-92 gold leads. N-Channel JFET 30V. New. 

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Transistor, PNP. Max voltage: 40VCEO 50VCBO. Max current: 1.5Amp. Dissipation: 1.2 watt. Package: TO-126B. New. P/N: 2SA885. Note: Silicon epitaxial planar. Cross NTE185. Learn More

2N6027 Transistor.

Programmable Unijunction 4

0V 300mW.

Case: TO-92.

New.

Note: Trigger.

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Transistors? Unknown values Case: TO-18 gold leads prepped 1/4". New. Note: Indiv packaged. Package labelled 102248606, 525 A Dio. Learn More

Transistor, NPN. Max voltage: 700VCEO 1500VCBO. Max current: 16Amp. Dissipation: 200 watt. Package: TO-218. New. P/N: BUH1215. Note1: High voltage, fast switching. Note2: Cross NTE2533. Minor mechanical differences exist, but device will fit most applications. Learn More

Transistor, P Channel Mosfet/Hexfet. Max voltage: 200V. Max current: 3Amp. Dissipation: 35 watt. Package: TO-220FP isolated pkg. New. P/N: IRFI9630G. Note: RDS on: 1.5 Ohm. Cross NTE2373. Learn More

Transistor, NPN. Max voltage: 12VCEO 20VCBO. Max current: 80mA. Dissipation: 100mW. Package: TO-247. P/N: 2SC5088. Note: Epitaxial planar. Cross NTE2643. Used/Removed from equipment. Learn More

Transistor, NPN. Max voltage: 12VCEO 20VCBO. Max current: 80mA. Dissipation: 100mW. Package: TO-247. P/N: 2SC5088. New. Note: Epitaxial planar. Cross NTE2643. Learn More

Transistor, N Channel mosfet. Max voltage: 250V. Max current: 11Amp. Dissipation: 35 watt. Package: TO-220FP. New. P/N: 2SK2341. Note: RDS On: 0.26 Ohm. Learn More

Transistor, N Channel Mosfet. Max voltage: 60V. Max current: 2Amp. Dissipation: 15 watt. Package: TO-126. P/N: 2SK701. Note: Field effect. RDS On: 0.6 Ohm. Learn More

Transistor, NPN. Max voltage: 600VCEO 1500VCBO. Max current: 20Amp. Dissipation: 150 watt. Package: TOP-3L. New. P/N: 2SC5584. Note: Silicon. High voltage. Cross NTE2533. Learn More

Transistor, NPN. Max voltage: 80V. Max current: 4Amp. Dissipation: 40 watt. Package: TO-126. New. P/N: SK3996. Note: Silicon darlington. Cross NTE253. Learn More

Transistor, PNP. Max voltage: 110VCER 115VCBO. Max current: 300mA. Dissipation: 3 watt. Package: TO-126. New. P/N: BFQ252A. Cross NTE2634. Learn More