Transistors

Transistor, NPN. Voltage: 80VCEO, 100VCB. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Case: TO-3 steel. New. Note: Silicon. Manufactures logo has 3 arrows facing northwest. Learn More

Transistor, NPN. Max voltage: 80VCEO 100VCBO. Max current: 5Amp. Dissipation: 2 watt. Package: TO-59 stud, gold. New. P/N: 2N5004. Note: Silicon. Learn More

Transistor, PNP. Voltage: 60V. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3 steel new. Note: Silicon. Military NSN 5961-00-904-2021. Learn More

Transistor, PNP. Max voltage: 50VCEO, 75VCBO. Max current: 2Amp. Dissipation: 10 Watt. Package: TO-39. P/N: 2N5323. Note: Silicon. Learn More

Transistor, NPN. Max voltage: 100VCE. Max current: 30 Amp. Dissipation: 250 watt. Package: TO-114 Stud. P/N: 2N2110. Operating temperature: -65 to 175 Deg C. Note: Silicon. Military NSN 5961-00-957-9892. Learn More

Transistor, NPN. Max voltage: 100V. Max current: 2Amp. Dissipation: 40 watt. Package: TO-210AA (TO-59) stud. New. P/N: 2N3207. Note: Silicon. Manuf logo "S". Learn More

TRW - PT6707 Transistor - NEW OLD STOCK - RF GOLD LEADS

Status: Discontinued

Voltage Rating In Volts Per Characteristic:  55.0 breakdown voltage, collector-to-base, emitter open and 35.0 breakdown voltage, collector-to-emitter, base open and 3.5 breakdown voltage, emitter-to-base, collector open

Current Rating Per Characteristic: 425.00 milliamperes source cutoff current

Power Rating Per Characteristic: 5.0 watts small-signal input power, common-collector

Mounting Method: Threaded Stud 0.164 inches

Overall Height: 0.145 inches minimum and 0.165 inches maximum

Overall Diameter: 0.335 inches minimum and 0.375 inches maximum

Electrode Internally-Electrically Connected to Case: Collector

Features Provided: Hermetically sealed case

III Semiconductor Material: Silicon

Special Features: T.O. 31R2-2GRT-104

Junction pattern arrangement: NPN

Terminal Type and Quantity: 3 tab, solder lug

Altermates: 511810-1, DMS 8101B

NSN: 5961-00-416-3530

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Transistor, NPN. Max voltage: 500V. Max current: 10 Amp. Dissipation: 100 watt. Package: TO-3 steel. P/N: BUX80. Note: High speed, high voltage, high power. Silicon. Learn More

Transistor, NPN. Max voltage: 400V. Max current: 3 Amp. Dissipation: 40 watt. Package: TO-220. P/N: UMT1204. Note: 5Amp peak, 1Amp continuous. Operating and storage temperature -65 Deg to 150DegC. Silicon. Learn More

UNITRODE - VK2002 - Military Stud

3 leads.

NSN 5961-00-546-6473. 

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IC. Bipolar digital NPN transistor array, 7 single driver. CC. IR2C30. Package: 16 Dip. Note: Silicon monolithic. Note: Clean socket pulls. Used/Removed from equipment. Learn More

Toshiba - 2SC2236A - Transistor, NPN.

Max Voltage: 30V.

Max Current: 1.5Amp.

Frequency: 120 MHz

Dissipation: 900mW.

Package: Large Extended Round Back TO-92 Plastic.

Application: Audio Power Amplifier.

Note: Silicon Epitaxial.

Alternate: NTE382

Applications: Numerous amplifiers

Genuine Toshiba - New Old Stock - Rare

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Toshiba - 2SC2075 BJT Transistor, NPN.

• Type - NPN
• Collector-Emitter Voltage: 80V
• Collector-Base Voltage: 80V
• Emitter-Base Voltage: 4V
• Collector Current: 4A
• Collector Dissipation - 10W
• DC Current Gain (h_fe) - 25
• Transition Frequency - 100MHz
• Operating and Storage Junction Temperature Range -55 to +150°C
• Package - TO-220

Note: Silicon Epitaxial (PCT). 

Genuine Vintage Toshiba - New Old Stock - Original Factory Driver Transistor

Cross NTE236, ECG236.

Marked C2075.

Applications: CB Ham Radio

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Transistor, PNP. Max voltage: 12VCEO 45VCBO. Max current: 1Amp. Dissipation: 6.6 watt. Package: TO-66 steel. New. P/N: 2SB368. Note: Germanium. Cross ECG131. Learn More

Texas Instr, Motorola, RCA - PNP Transistors, TO-18 Gold, New, Package of 10 Mixed House Numbers 112003, 8510671, 198000, 222131, 112002 PNP Transistors with Spacer Gain hFE: 90 to 150 uF: 285 – 380 AV Appear to be Interchangeable PNP House Number Transistors. House Numbers are often assigned to withhold Proprietary Data Case: TO-18 Gold Leads New Old Stock Learn More

Toshiba - 2SD822 - Transistor, NPN.

Max voltage: 600VCEO, 1500VCBO.

Max current: 7Amp.

Dissipation: 50 watt.

Package: TO-3.

Note: Silicon.

High switching speed.

High Voltage.

Genuine Toshiba - Used - Leads Cut/ Removed from Equipment - Rare

Alternates: NTE238, ECG165, SK2SD822.

 

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Transistor, IGBT. Max voltage: 450VCEO 600VCBO. Max current: 30Amp. Package: Module. P/N: MG30G2YL1. Note: 2 Channel. Learn More

Transistor, GTR, NPN. Max voltage: 600V. Max current: 15Amp. Dissipation: 100 watt. Package: Module. P/N: MG15G6EL1. Application: High power switching and motor control. Note: Silicon, triple diffused type. New. Learn More

Transistor, NPN. Max voltage: 40V. Max current: 1Amp. Dissipation: 30 watt. Package: TO-220. P/N: TIP29. Note: Silicon. Tarnishing, cleanable. Learn More

Texas Instruments - TL430CJG Shunt Regulator.

Programmable. Adjustable 2.75V to 30V 

Voltage: 30V.

Current: 150mA.

Package: CDIP.

New.

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Transistor, NPN. Package: TO-220. New, older stock. Note: Cross NTE184. Learn More

Transistor, NPN. Max voltage: 60V. Max current: 10Amp. Dissipation: 5 watt, free air. Package: TO-3. P/N: TIP640. Note: Silicon. Darlington. Used/Removed from equipment. Note: Cross NTE270. Learn More

Transistor, NPN. Voltage: 80V. Current: 10Amp. Dissipation: 125 watt. Operating temperature: -65 to 150 Deg C. Package: to-218. Note: Silicon darlington. Learn More

Transistor. Package: TO-72 gold leads. New. Learn More