Transistors

Transistor, NPN. Max voltage: 150V. Max current: 10Amp. Dissipation: 150 Watt. Package: TO-36. P/N: 2N2232. Note: High gain fused silicon. Learn More

Transistor. Unknown values. Case: TO-92 plastic. New, bulk packaged. Note: Marked 144 972 01. Learn More

Transistor. Only marked 232B. Case: TO-92 plastic. New, bulk packaged. Note: Maybe P/N 921-232B? Learn More

Transistor, NPN. Max voltage: 65VCEO 150VCBO. Max current: 300mA. Dissipation: 800mW. Package: TO-5. P/N: 2N1342. Note: Silicon. Learn More

IC. Transistor array. Eight darlingtons with common emitters. Output voltae to 50V. Output current to 500mA. Input resistor: 10.5K Ohm. Package: 18 Dip. Please Note: One piece is Motorola. Learn More

Transistor, NPN. Voltage: 60VCEO, 80VCB. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3 steel. Note: Silicon. Military NSN5961-00-416-4859. Learn More

Transistor, NPN. Max voltage: 55CVEO, 100VCBO. Max current: 6 Amp. Dissipation: 75 Watt. Package: TO-3. P/N: JAN2N1490. Operating temperature: -65 to 200 Deg C. Note: Silicon high power. Learn More

Transistor, NPN silicon. Max voltage: 400V. Max current: 3.5Amp. Dissipation: 100 Watt, 1.33 Watt/Deg C. Package: TO-3 steel. P/N: JAN2N3902. Application: Designed for use in high voltage inverters, converters, switching regulators and line operated amplifiers. Note: High Voltage. Operating temperature; -65 to 150 DegC. Military NSN 5961-00-085-0468. Learn More

Transistor, RF power FET. Case: RF, 211-07. Note: Factory new, all individually packaged. Learn More

SIGNETICS - SD306 Transistor, DMOS FET.

Max voltage: 20VDS.

Max current: 50mA.

Dissipation: 300mW.

Package: TO-72 Gold Leads.

New. 

Application: For use with VHF, TV.

Note: Double-diffused inputs. Diode protected gates.

Alternate: 2SK194 

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Transistor, N CH JFET. Max voltage: 30V. Max current: 10mA. Dissipation: 300mW. Package: TO-72. New. P/N:JANTXV 2N3823. Note: Cross NTE459. Aerospace/Military NSN 5961-00-104-8426. Learn More

Transistor, P Channel Mosfet. Max voltage: 45V (-3.5VGS). Max current: 0.18Amp. Dissipation: 0.83 watt. Package: TO-92 (TO-226AA) plastic, 3 leads. P/N: BS250. Note: VMOS. RDS on 14 Ohm (Typical 9 Ohm). Learn More

Transistor, PNP. Max voltage: 12VCEO 15VCBO. Max current: 0.2Amp. Package: TO-72 gold leads. New. P/N: 2N3248. Note: 250MHz. Learn More

Transistor, P Channel mosfet. Max voltage: 100v. Max current: 0.28Amp. Dissipation: 800mW. Package: TO-92 plastic (TO-226AA). P/N: VP1008L. Note: Enhancement mode. RDS on 4.4 - 8 Ohm. Learn More

Transistor, N-Channel FET. Voltage: 60V. Current: 2 amp. Dissipation: 50mW. Operating temperature: -55 to 150 Deg C. Package: TO-39. Note: Switching. Enhancement mode. Military NSN 5961-01-084-2583. Learn More

Transistor, N Channel FET. Max voltage: 100V. Max current: 45Amp. Package: TO-3 steel. New. P/N: SMM45N10. Learn More

Vishay Siliconix - JANTX2N4857 Transistor, N Channel FET.

Status: Discontinued

Case/Package: TO-18-3

Mount: Through Hole

Number of Pins: 3

Gate to Source Voltage (Vgs): -40 V

Max current: 50mA.

Dissipation: 1.8 watt.

RDS on: 40 Ohm.

Operating Temperature: -65C to 200 °C

Radiation Hardening: Yes

RoHS Compliant

NSN: 5961-00-517-9416

 

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Unknown function & values. Case: TO-18 gold leads. New. Learn More

Transistor, PNP. Max voltage: 18VCEO, 30VCBO. Max current: 50mA. Dissipation: 30mW. Package: TO-1, 3 Leads/metal can. P/N: 2N499. Note: Germanium. Learn More

Silicon General/Microsemi - MJ2500 Transistor, PNP.

Max voltage: 60V.

Max current: 10Amp.

Dissipation: 150 watt.

Package: TO-3 steel.

Application: GP amplifier.

Medium power complementary silicon darlington.

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Transistor, NPN. Max voltage: 400VCEO, 850VCEV. Max current: 8Amp. Dissipation: 125 watt. Package: TO-3 Heavy steel. P/N: 2N6545. Note: Silicon. Used/Removed from equipment. Pulled from clean boards, no solder, no compound. High Voltage. Cross: ECG53/NTE53. Learn More

Transistor, NPN. Max voltage: 275VCEO, 300VCBO. Max current: 3Amp. Dissipation: 100 watt. Package: TO-3 Steel. P/N: 2N5839. Note: Silicon. High voltage, high power. Cross ECG94. Used/Removed from equipment. Excellent condition. Pulled from clean boards, no solder, no compound. Learn More

Transistor, NPN. Max voltage: 275VCEO, 300VCBO. Max current: 3Amp. Dissipation: 100 watt. Package: TO-3 Aluminum. P/N: 2N5839. Note: Silicon. High voltage, high power. Cross ECG94. Used/Removed from equipment. Pulled from clean boards, no solder, no compound. Learn More

Siliconix - 2N4092 Transistor, N CH FET.

Status: Discontinued

Voltage: 40V.

Current: 10mAdc.

Dissipation: 0.36 watt.

Operating temperature: -65 to 175 Deg C.

Package: TO-92.

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