EG&G VACTEC - VTB8441BH - Photodiode Fotodiode. Spectral Range: 330-720nm.
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EG&G VACTEC - VTB8441BH Photodiode.
The VTB8441BH is a blue enhanced Silicon Photodiode on 8mm ceramic substrate coated with IR blocking filter having a 5.2mm² active area designed for spectral response between 330 and 720nm. This series of P on N Silicon planar photodiode has been designed for optimum response through the visible part of the spectrum. This photodiode is primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. It also been designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Spectral range: 330-720nm.
Dark current: 100pA.
Number of Pins: 2
Wave Length: 580 nm
Current Rating: 5 A
Voltage - DC Reverse: 40V
Open Circuit Voltage: 420mV.
Operating Temp: - 20 C to 75 C
Package: case 21F, 8mm ceramic (recessed).
Note: Silicon Planar.
SKU | 11225 |
---|---|
Condition | FN - FACTORY NEW |
Part Number | VTB8441BH |
EG&G VACTEC - VTB8441BH Photodiode.
The VTB8441BH is a blue enhanced Silicon Photodiode on 8mm ceramic substrate coated with IR blocking filter having a 5.2mm² active area designed for spectral response between 330 and 720nm. This series of P on N Silicon planar photodiode has been designed for optimum response through the visible part of the spectrum. This photodiode is primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. It also been designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Spectral range: 330-720nm.
Dark current: 100pA.
Number of Pins: 2
Wave Length: 580 nm
Current Rating: 5 A
Voltage - DC Reverse: 40V
Open Circuit Voltage: 420mV.
Operating Temp: - 20 C to 75 C
Package: case 21F, 8mm ceramic (recessed).
Note: Silicon Planar.