IR - IRF840 - Transistor, NPN Channel FET. 500V, 8A, TO-220, High Voltage
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IR - IRF840 - Transistor, NPN Channel FET. 500V, 8A, TO-220, High Voltage
Continuous Drain Current (ID): 8 A
Current Rating: 8 A
Drain to Source Breakdown Voltage: 500 V
Drain to Source Resistance: 850 mΩ
Gate to Source Voltage (Vgs): 20 V
Operating Temperature: -55 to 150 °C
Power Dissipation: 125 W
Rise Time: 23 ns
Voltage Rating (DC): 500 V
Case/Package: TO-220AB
Transistor, NPN Channel FET. Max voltage: 500V. Max current: 8Amp. Dissipation: 125 watt. Package: TO-220. P/N: IRF840. Note: Enhancement mode silicon gate. RDS on 0.85 Ohm. High Voltage.
| SKU | 131367 |
|---|---|
| Condition | NS - NEW SURPLUS |
| Part Number | IRF840 |
IR - IRF840 - Transistor, NPN Channel FET. 500V, 8A, TO-220, High Voltage
Continuous Drain Current (ID): 8 A
Current Rating: 8 A
Drain to Source Breakdown Voltage: 500 V
Drain to Source Resistance: 850 mΩ
Gate to Source Voltage (Vgs): 20 V
Operating Temperature: -55 to 150 °C
Power Dissipation: 125 W
Rise Time: 23 ns
Voltage Rating (DC): 500 V
Case/Package: TO-220AB
Transistor, NPN Channel FET. Max voltage: 500V. Max current: 8Amp. Dissipation: 125 watt. Package: TO-220. P/N: IRF840. Note: Enhancement mode silicon gate. RDS on 0.85 Ohm. High Voltage.
