IR - IRFP250 - Transistor, N Channel MOSFET. 200V, 30Amp
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IR - IRFP250 Transistor, N Channel MOSFET.
Fifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applications.
Max voltage: 200V.
Max current: 30 Amp.
Dissipation: 190 watt.
Package: TO-247.
Operating temperature: -55 to 150 Deg C.
Note: RDS on: 0.085 Ohm.
Additional Data: http://www.irf.com/product-info/datasheets/data/irfp250.pdf
| SKU | 9983 |
|---|---|
| Condition | FN - FACTORY NEW |
| Part Number | IRFP250 |
IR - IRFP250 Transistor, N Channel MOSFET.
Fifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applications.
Max voltage: 200V.
Max current: 30 Amp.
Dissipation: 190 watt.
Package: TO-247.
Operating temperature: -55 to 150 Deg C.
Note: RDS on: 0.085 Ohm.
Additional Data: http://www.irf.com/product-info/datasheets/data/irfp250.pdf
