MITSUBISHI - M5K4164ANP-15 - IC, Memory. 65,536 word x 1 Bit DRAM. New.
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MITSUBISHI - M5K4164ANP-15 IC, Memory.
This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities. The M5K4164ANP operates on a 5V power supply using the on-chip substrate bias generator.
Status: Discontinued
65,536 Word x 1 Bit
DRAM Page Mode.
Package: 16 DIP.
New Old Stock.
| SKU | 137489 |
|---|---|
| Condition | NS - NEW SURPLUS |
| Part Number | M5K4164ANP-15 |
MITSUBISHI - M5K4164ANP-15 IC, Memory.
This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities. The M5K4164ANP operates on a 5V power supply using the on-chip substrate bias generator.
Status: Discontinued
65,536 Word x 1 Bit
DRAM Page Mode.
Package: 16 DIP.
New Old Stock.
