Motorola - MRF209 - Transistor, NPN. 4A, 25W, SOE Gold Stud.
Motorola - MRF209 - Transistor, NPN.
MRF209 is a silicon NPN transistor, Ucb = 36V, Ic = 4A, applications: VHF range, power transistor.
Vbr CBO: 36
Vbr CEO:18
Max. PD (W): 50
Min hFE: 5.0
Ic Max. (A): 4.0
@Ic (test) (A): 500m
Icbo Max. @Vcb Max. (A): 500u
Polarity: NPN
Oper. Temp (°C) Max.: 175
@VCE (V): 5.0
Pkg Style: StX-8
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Max voltage: 18VCEO, 30VCBO.
Package: SOE stud gold.
Note: RF Silicon.
| SKU | 134707 |
|---|---|
| Condition | FN - FACTORY NEW |
| Part Number | MRF209 |
Motorola - MRF209 - Transistor, NPN.
MRF209 is a silicon NPN transistor, Ucb = 36V, Ic = 4A, applications: VHF range, power transistor.
Vbr CBO: 36
Vbr CEO:18
Max. PD (W): 50
Min hFE: 5.0
Ic Max. (A): 4.0
@Ic (test) (A): 500m
Icbo Max. @Vcb Max. (A): 500u
Polarity: NPN
Oper. Temp (°C) Max.: 175
@VCE (V): 5.0
Pkg Style: StX-8
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Max voltage: 18VCEO, 30VCBO.
Package: SOE stud gold.
Note: RF Silicon.