Motorola - MRF325 - Transistor, NPN. 3.4ADC, 82 watts, Case 316-01 Style ! Used.
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Motorola - MRF325 - Transistor, NPN.
Designed primarily for wide-band large-signal output amplifier stages in the 100 to 500MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts Minimum Gain 8.5 dB Efficiency = 54% (Min) BuiltIn Matching Network for Broadband Operation Using Internal Matching Techniques 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization for High Reliability Applications
Max Voltage: 33VCEO, 60VCBO.
Max Current: 3.4Adc.
Dissipation: 82 watt.
Package: Case 316-01, Style 1.
Operating Temperature: -65 to 150 Deg C.
Broadband RF. Silicon. 30W, 225 to 400MHz.
Guaranteed Performance @ 400MHz, 28Vdc /Output Power = 80 watts over225 to 400 MHz Band
Minimum Gain = 7.3 dB@ 400MHz
Note: Used/Removed from equipment and may have be soldered.
| SKU | 156931 |
|---|---|
| Condition | USED |
| Part Number | MRF325 |
Motorola - MRF325 - Transistor, NPN.
Designed primarily for wide-band large-signal output amplifier stages in the 100 to 500MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts Minimum Gain 8.5 dB Efficiency = 54% (Min) BuiltIn Matching Network for Broadband Operation Using Internal Matching Techniques 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization for High Reliability Applications
Max Voltage: 33VCEO, 60VCBO.
Max Current: 3.4Adc.
Dissipation: 82 watt.
Package: Case 316-01, Style 1.
Operating Temperature: -65 to 150 Deg C.
Broadband RF. Silicon. 30W, 225 to 400MHz.
Guaranteed Performance @ 400MHz, 28Vdc /Output Power = 80 watts over225 to 400 MHz Band
Minimum Gain = 7.3 dB@ 400MHz
Note: Used/Removed from equipment and may have be soldered.
