Matsushita – 2SB449 - PNP Germanium Tranisistor, 22W 50V TO-3 New
Special Price
$6.98
Regular Price
$8.95
READY TO SHIP - ONLY 248 LEFT IN STOCK!
SKU
8864
Matsushita – 2SB449 - PNP Germanium Tranisistor, 22W 50V TO-3 New
The Matsushita 2SB449 PNP Germanium transistor is a 22W power transistor designed for PCB mounting. With a maximum collector-base voltage of 50V and collector-emitter voltage of 32V, this unit is suitable for various industrial and electronic applications. Made in Japan, this bulk-packaged transistor is capable of handling up to 3.5A of DC collector current and operates at a maximum power dissipation of 22W, making it ideal for use in high-temperature environments up to 100°C (212°F).
Material of Transistor: Germanium
Low collector saturation voltage - Wide area of safe operation
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 22 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
Alternates: ECG121 SK3717
Applications: AF, Power amplifiers, Power Switching, DC-DC Converters and all purpose applications.
New Old Stock – Rare – Difficult Transistor to find. - Vintage
| SKU | 8864 |
|---|---|
| Condition | NS - NEW SURPLUS |
| Part Number | 2SB449 |
| Alternative Part Number | ECG121 SK3717 |
Matsushita – 2SB449 - PNP Germanium Tranisistor, 22W 50V TO-3 New
The Matsushita 2SB449 PNP Germanium transistor is a 22W power transistor designed for PCB mounting. With a maximum collector-base voltage of 50V and collector-emitter voltage of 32V, this unit is suitable for various industrial and electronic applications. Made in Japan, this bulk-packaged transistor is capable of handling up to 3.5A of DC collector current and operates at a maximum power dissipation of 22W, making it ideal for use in high-temperature environments up to 100°C (212°F).
Material of Transistor: Germanium
Low collector saturation voltage - Wide area of safe operation
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 22 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
Alternates: ECG121 SK3717
Applications: AF, Power amplifiers, Power Switching, DC-DC Converters and all purpose applications.
New Old Stock – Rare – Difficult Transistor to find. - Vintage