Diode Bridge

Siemens - DB104G Diode.

FWB, full wave bridge rectifier.

400V 1Amp. Case: 4 Dip.

New.

Glass Passivated.

Alternate: NTE5332.

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IXYS - VBE55-06 NO7 Diode, Bridge.

Single phase with Fast Recovery Epitaxial Diodes (FRED).

Working Voltage: 600V. Current rating: IdAV 68Amp.

Recovery Time: 35ns.

Case: ECO-PAC.

Dimensions: 47mm x 30.3mm x 8mm high, with 39mm mount centers.

Overall with Gold Plated Leads: 20.3mm tall.

Lead spacing: 10.8mm.

Genuine IXYS- VBE55-06 NO7 Diode Module- New Old Stock - Rare

Applications: Supplies for DC power equipment. Input and output rectifiers for high frequency. Battery DC power supplies. Field supply for DC motors.

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General Instruments - GIB3500 Diodes, bridge.

FWB, full wave bridge rectifier.

Working voltage: 50V.

Current rating: 35Amp.

Mount: through hole for #10 screw.

Contacts: Male quick connect terminals.

Case: Electrically isolated metal case.

Cross Reference: Motorolla MDA3500

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Varo - VK248 - Diodes, Bridge.

FWB, Full Wave Bridge Rectifier.

Working voltage: 200V.

Current rating: 30Amp.

Non-controlled avalanche.

Operating temperature: -55 to 175 Deg C.

Case material: silicone covered epoxy.

Used, removed from equipment.

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Siemens - SB251G Diodes, bridge.

FWB, full wave bridge rectifier.

Working voltage: 100V.

Current rating: 25Amp.

Mount: through hole for #10 screw.

Contacts: Male quick connect terminals.

Case: Electrically isolated metal case.

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UNITRODE - 652-958 - Diode.

Voltage: 100V peak inverse.

Current Rating: 500 Amp peak forward surge.

Material: Silicon.

Contacts: 3 tab, solder terminals.

Case: Module.

Dimensions: 1.5" long x 1.25 wide x 0.75 high.

Note: Military NSN 5961-01-030-9478.

Lockheed Martin 6096952-2.

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MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

MOSFET Type: FREDFET 7

Mount: Chassis Mount, Screw

Number of Contacts: 6

Continuous Drain Current: (ID) 90 A

Drain to Source Voltage: (Vdss) 500 V

Fall Time: 77 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 1.2 nF

Operating Temperature: -40 C to 150 °C

Max Power Dissipation: 694 W

Number of Elements: 4

Power Dissipation: 694 W

Rds On Max: 45 mΩ

Rise Time: 35 ns

Turn-Off Delay Time: 87 ns

Turn-On Delay Time: 18 ns

Approximate Dimensions: See Attached Detailed Diagram

RoHS Compliant

Does not include mounting hardware.

Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

 

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Diode. FWB, full wave bridge rectifier. Working voltage: 600V peak inverse. Current rating: 1.5Amp. Surge rating: to 25Amp. Single phase rectifier assembly, fast recovery. Maximum reverse recovery time: 500ns. Operating temperature: �65 to 150 Deg C. Applications: designed for universal application in power supplies. Case: S-body, 4 radial leads. Dimensions: 11.17mm wide x 11.17mm high x 4.75mm deep. Lead spacing: 2.54mm. New. Learn More

Diode. FWB, full wave bridge rectifier. 2.25Amp 600V. Fast recovery, 500ns. Package: 5 leads. Learn More

Diodes, full wave bridge rectifier. Single phase, 200V 2 Amp. Case: Epoxy, 12.8mm square, 2 axial each leads each side. Learn More

Shindengen Electric - S1ZB80-4101 Diode. FWB, Full Wave Bridge.

Status: Discontinued

Type: Encapsulated Single Phase Bridge            

If - Forward Current: 800 mA      

Peak Reverse Voltage: 800 V      

Vf - Forward Voltage: 1.05 V       

Max Surge Current: 30 A              

Operating Temperature: - 40 C to + 150 C             

Ir - Reverse Current: 10 uA          

Product Type: Bridge Rectifiers

Rectifiers VRM=800 800mA.

Case: 4 Dip, 0.1'' x 0.2'' spacing.

More info: www.shindengen.co.jp/product_e/semi/list_detail.php?code=01&id=84

Made in Japan

Marked Z8 14

GE # LL0893

Note: Highly Discounted when purchasing manufacturers full tube of 100.

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Diode, full wave bridge rectifier. 100V 70Vrms 2Amp. Package: 4-pin inline molded plastic package. Learn More

Vishay - DF10SA-E3/77 - Diode. FWB, Full Wave Bridge Rectifier.

700VRMS, 1000V Peak Reverse and Blocking Voltage.

Current: 1Amp.

Case DFS SMD.

Note: Single Phase.

Miniature Glass Passivated.

Factory new from manufacture 13" T/R of 1500/Per.

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Diode. FWB, full wave bridge rectifier. Working voltage: 400V. Current rating: 10Amp. Single phase. Case: TO-3, hermetically sealed. Used, removed from equipment. Learn More

Diode. FWB, full wave bridge. 25Amp 600V. Single phase. Package: GSIB-5S molded, 4 Pin inline. Learn More

Diode, FWB. Full wave bridge rectifier. Silicon 1P 200V 1.5 Amp. Single phase. Case: Round 4 pin. Learn More

Vishay - 3N254 Diode, FWB, full Wave Bridge Rectifier.

Status: Discontinued

2 Amp 100V.

Single phase.

Package: KBPM style, 4 pin inline.

New Old Stock

Note: Double marked 2KPB01M.

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Diode, avalanche bridge rectifier. 10Amp 200V. Single phase, high speed. Fast recovery. Package: TO-3 outline Flange, hermetically sealed, welded package. Note: Silicon. Learn More

Diode, avalanche bridge rectifier. 10Amp 200V. Fast recovery. Package: TO-3 outline Flange, hermetically sealed, welded package. Note: Silicon. Learn More

Diode, avalanche bridge rectifier. Package: TO-3 Flange. Learn More

Diode. FWB, full wave bridge rectifier. 1.5Amp 1000V Peak repetitive reverse, 700V RMS input, 1000V DC reverse. 1PH. Package: glass passivated silicon round 4 leads. Learn More

Diode. FWB, full wave bridge rectifier. 100V Reverse Voltage Peak, 4 Turret. Note: Military NSN 5961-010981813, Lockheed 6091805-1, Marked Unitrode 655-454. Overall w/mt 2.245" long x 0.747" deep x 0.5" high Learn More

Diode. Controllable bridge rectifier. 26Amp 800V. Package: Module. Contacts: 1/4" male quick connect terminals. Used/Removed from equipment. Learn More

Diode. FWB, fullwave bridge rectifier. Double marked SA3207. Quick connect 1/4". Note: Military NSN 5961-01-058-1933. Learn More