Transistors
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LAMBDA - PMD10K100 - Transistor, NPN. P/N: PMD10K100.$20.00Transistor, NPN. Max voltage: 100V. Max current: 12Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: PMD10K100. Operating temperature:-65 to 200 Deg C. Note: Silicon epitaxial darlington. Learn More -
KRC - 2N3207 - Transistor, PNP. P/N: 2N3207.$20.00Transistor, NPN. Max voltage: 100V. Max current: 2Amp. Dissipation: 40 watt. Package: TO-210AA (TO-59) stud. New. P/N: 2N3207. Note: Silicon. Military NSN 5961-00-924-9612. Learn More -
KSC SEMI CORP. - 2N1136B - Transistor, PNP. P/N: 2N1136B.$12.99Transistor, PNP. Max voltage: 80VCEO, 100VCBO. Max current: 6Amp. Package: TO-3. P/N: 2N1136B. Note: Germanium. Military NSN 5961-00-751-7632. Learn More - IXYS - IXGQ50N60Y4 - Transistor, IGBT. 50Amp 600V.$99.00Transistor, IGBT. Max voltage: 600V. Max current: 50Amp. Package: Module. MOSBLOC. P/N: IXGQ50N60Y4. Note: Double marked GN77060Q1Y4. Learn More
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ITT - 2N4403 - Transistor, PNP. 40V, 600mA, TO-92IN STOCK - MORE THAN 500 READY TO SHIP!ITT - 2N4403 Transistor, PNP.
Voltage: 40V.
Current: 600mA.
Dissipation: 625mW.
Operating temperature: -55 to 150 Deg C.
Package: TO-92, plastic.
Note: Silicon.
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IR - IRFZ34 - Transistor, N CH hexfet. P/N: IRFZ34.$1.00Transistor, N CH Hexfet. Max voltage: 55V. Max current: 26Amp. Dissipation: 56 watt. Package: TO-220. P/N: IRFZ34. Note: RDS on: 0.040 Ohm. Hexfet, power mosfet. Learn More -
IR - IRFZ30 - Transistor, IM-Channel Hexfet. 50V 30Amp 75W. New.$2.00READY TO SHIP - ONLY 25 LEFT IN STOCK!Transistor, IM-Channel Hexfet. Max voltage: 50V. Max current: 30Amp. Dissipation: 75 watt. Package: TO-220 metal tab. New. P/N: IRFZ30. Note: RDS On: 0.05 Ohm. Learn More -
International Rectifier - IR - IRFD110 - Transistor, N Channel MOSFET. 100V 1Amp 1W. New.READY TO SHIP - ONLY 63 LEFT IN STOCK!International Rectifier - IR - IRFD110 Transistor, N Channel MOSFET.
Max voltage: 100V.
Max current: 1 Amp.
Dissipation: 1 watt.
Package: 4 Dip, tarnishing - New Old Stock.
Operating temperature: -55 to 150 Deg C.
Note: Enhancement mode silicon gate.
RDS on: 0.6 Ohm.
Hexdip
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IR - IRF840 - Transistor, NPN Channel FET. 500V, 8A, TO-220, High VoltageIN STOCK - MORE THAN 100 READY TO SHIP!IR - IRF840 - Transistor, NPN Channel FET. 500V, 8A, TO-220, High Voltage
Continuous Drain Current (ID): 8 A
Current Rating: 8 A
Drain to Source Breakdown Voltage: 500 V
Drain to Source Resistance: 850 mΩ
Gate to Source Voltage (Vgs): 20 V
Operating Temperature: -55 to 150 °C
Power Dissipation: 125 W
Rise Time: 23 ns
Voltage Rating (DC): 500 V
Case/Package: TO-220AB
Transistor, NPN Channel FET. Max voltage: 500V. Max current: 8Amp. Dissipation: 125 watt. Package: TO-220. P/N: IRF840. Note: Enhancement mode silicon gate. RDS on 0.85 Ohm. High Voltage.
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IR - IR2101 - IC. Mosfet and IGBT driver.$3.00IC. High voltage and high speed Mosfet and IGBT driver. Package: 8 Dip. New. Learn More -
IR - IRF640 - Transistor, N Ch TrenchMOS. 200V 16Amp. New.$2.00READY TO SHIP - ONLY 10 LEFT IN STOCK!Transistor, N Channel TrenchMOS. Max voltage: 200V. Max current: 16Amp. Dissipation: 136 watt. Package: TO-220 metal tab. P/N: IRF640. Note: RDS ON: 0.18 Ohm. Bulk packaged. Learn More -
IR - IRF7301 - Transistor, N Channel Mosfet. Dual 20V 5.2A 2W. New.Special Price $0.98 Regular Price $1.20READY TO SHIP - ONLY 3 LEFT IN STOCK!Transistor, N Channel Mosfet. Max voltage: 20V (Gate 12V). Max current: 5.2Amp. Dissipation: 2 watt. Package: 8 SOIC SMD. New. P/N: IRF7301. Note: Dual. RDS on: 0.05 Ohm. More info http://pdf1.alldatasheet.com/datasheet-pdf/view/68229/IRF/IRF7301.html Learn More -
INTERSIL - 3N170 - Transistor, N Channel MOSFET. P/N: 3N170.Out of stockINTERSIL - 3N170 - Transistor, N Channel MOSFET.
Drain source: 25V.
Drain gate: 35V.
Current: 30mA.
Dissipation: 300mW.
Package: TO-7-4.
Operating temperature: -55 to 150 Deg C.
Note: Enhancement mode.
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IR - 2N6849 - Transistor, P Channel MOSFET. P/N: 2N6849.$10.00Transistor, P Channel MOSFET. Max voltage: 100V. Max current: 6.5 Amp @ 25 Deg C, 4.1 Amp @ 100 Deg C. Dissipation: 25 watt. Package: TO-205AF (formerly TO-39). P/N: 2N6849. Operating temperature: -55 to 150 Deg C. Note: RDS on 0.3 Ohm. Learn More - IR - IRFD9014 - Transistor, P Channel Hexfet.
IR - IRFD9014 - Transistor, P Channel Hexfet.
Max voltage: 60V.
Max current: 1.1Amp.
Dissipation: 1.3 watt.
Package: HD-1, 4 Pin dip.
Note: RDS on: 0.5 Ohm.
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IR - IRF9Z34S - Transistor, P-Channel Hexfet. P/N: IRF9Z34S.$1.00Transistor, P-Channel Hexfet. Max voltage: 60V. Max current: 18A. Dissipation: 3.7W TA, 88W TC. Gain: 72 Amp. Package: TO-220/D-Pak SMD. P/N: IRF9Z34S. Note: RDS On: 0.14 Ohm. Learn More -
IR - IRFZ44E - Transistor, N Ch Mosfet.Special Price $2.98 Regular Price $4.95Transistor, N Ch Mosfet. Max voltage: 55V. Max current: 49 Amp. Dissipation: 94 watt. Case: TO-220. P/N: IRFZ44. Note: RDS ON: 17.5mOhm. Learn More -
IR - IRFU320 - Transistor, Hexfet/Mosfet. 400V 3.1A 42W. New.$3.00READY TO SHIP - ONLY 20 LEFT IN STOCK!Transistor, Hexfet/Mosfet. Max voltage: 400V. Max current: 3.1Amp. Dissipation: 42 watt. Case: Ipak, 3 pin, TO-251AA. P/N: IRFU320. Note: RDS on: 1.8 Ohm. Learn More -
IR - IRFP140 - Transistor, N Ch MOSFET. P/N: IRFP140.$5.00Transistor, N Ch MOSFET. Max voltage: 100V. Max current: 31Amp. Dissipation: 180 watt. Package: TO-3P (TO-247). P/N: IRFP140. Note: RDs On: 0.077 Ohm. Learn More -
INTERSIL - 2N2608 - Transistor, P-Channel JFET. P/N: 2N2608.$5.00READY TO SHIP - ONLY 5 LEFT IN STOCK!Transistor, P-Channel JFET. Voltage: 30V(BR). Current: 50mA. Dissipation: 300mW. Operating temperature: -55 to 150 Deg C. Package: TO-18. Learn More - ID - 2SD900B - Transistor, NPN. P/N: 2SD900B. Used.$5.00Transistor, NPN. Max voltage: 1500V. Max current: 16Amp. Dissipation: 50 watt. Package: TO-3 heavy steel. P/N: 2SD900B. Note: Silicon. High Voltage. Used/Removed from equipment. Learn More
- Harris Corp - RFP45N06 - Transistor, N Channel MOSFET. P/N: RFP45N06.$5.99Transistor, N Channel MOSFET. Max voltage: 60V. Max current: 45Amp. Package: TO-220. New. P/N: RFP45N06. Learn More
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Hitachi - 2SB337 - Transistor, PNP Germanium TO-3 Steel. Used.READY TO SHIP - ONLY 58 LEFT IN STOCK!Hitachi - 2SB337 Transistor, PNP Germanium.
Status: Discontinued
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 90 °C
Transition Frequency (ft): 0.125 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO-3 Steel
New Old Stock.
Alternates: ECG 104, ECG 121, NTE 104, NTE 121
Note: Cut Leads. Used/Removed from equipment.
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Hitachi - 2SB368 - Transistor, PNP. 12V 1Amp 6.6W.$5.00Transistor, PNP. Max voltage: 12VCEO 45VCBO. Max current: 1Amp. Dissipation: 6.6 watt. Case: TO-66 steel. New. P/N: 2SB368. Note: Germanium. Cross ECG131. Learn More