Transistors

Transistor, PNP. Voltage: 60V. Current: 10Amp. Dissipation: 70 watt. Package: TO-126. Learn More

Transistor, NPN. Voltage: 300VCEO. Current: 8Amp. Dissipation: 80 watt. Operating temperature: 065 to 150 Deg C. Package: TO-220. Note: Silicon darlington. Learn More

Transistor, NPN. Voltage: 300VCEO, 600VCEV. Current: 4Amp. Dissipation: 75 watt. Package: TO-220. Note: Silicon. Operating temperature: - 65 to 150 Deg C. Switchmode. Cross NTE51. Learn More

Transistor, NPN/PNP. Max voltage: 30V. Max current: 200mA. Dissipation: 500mW each transistor / 900mW equal power 4 transistors. Package: 14 Dip (TO-116). P/N: MPQ6842. Note: Silicon, quad dual inline complementary pair. Military NSN 5962-01-098-4630. Learn More

Motorola - MTM1N95 Transistor, N Channel MOSFET.

Status: Discontinued

Max voltage: 950V.

Max current: 1 Amp.

Dissipation: 75 watt.

Package: TO-3 Steel.

Operating temperature: -65 to 150 Deg C.

Note: Enhancement mode silicon gate.

TMOS power. RDS on: 10 Ohm @ 0.5 Amp.

Learn More

Motorola - MRF325 - Transistor, NPN.

Max voltage: 33VCEO, 60VCBO.

Max current: 3.4Adc.

Dissipation: 82 watt.

Package: Case 316-01, style 1.

Operating temperature: -65 to 150 Deg C.

Note: Broadband RF.

Silicon. 30W, 225 to 400MHz.

Learn More

Transistor, PNP. Voltage: -60V. Current: 500mAdc. Dissipation: 625mW. Operating temperature: -55 to 150 Deg C. Package: TO-92, plastic. Note: Silicon, darlington. Learn More

Motorola - MPSA43 Transistor, NPN.

Voltage: 200V.

Current: 500mAdc.

Dissipation: 625mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, Plastic.

Note: Silicon darlington.

High Voltage.

Learn More

Transistor, NPN/PNP. Max voltage: 30VCEO, 60VCBO. Max current: 50mA. Dissipation: 650mW each transistor / 1250mW equal power 4 transistors. Package: 14 Dip (TO-116). P/N: MPQ6002. Note: Silicon, quad dual inline complementary pair. Learn More

Transistor, quad. PNP core driver. Voltage: 40V. Current: 500mA. Note: 4 x 2N3467. Package: TO-116, 14 Dip. Learn More

Motorola - MPS2369 / MPS2369ZL1 Transistor, NPN.

Voltage: 15VCEO, 40VCBO.

Current: 200mAdc.

Dissipation: 625mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Note: Silicon.

Alternates (Form/Fit/Function): MMBT2369A, MMBT2369, MPS2369A, MPS2369

Learn More

Transistor, N Channel MOSFET. Max voltage: 450V. Max current: 7 Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: MTM7N45. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. TMOS power. RDS on: 0.8 Ohm @ 3.5 Amp. Learn More

Transistor, NPN. Max voltage: 40V. Max current: 500mA. Dissipation: 300mW. Package: SOT-23 SMD molded plastic. P/N: MMBT6427LT1. Operating temperature: -55 to 150 Deg C. Note: Silicon darlington. Learn More

Motorola - MJE4353 Transistor, PNP.

Voltage:160V.

Current: 16Amp.

Dissipation: 125 watt.

Operating temperature: - 65 to 150 Deg C.

Package: TO-218.

Note: Silicon.

Alternate: NTE4353

Learn More

Motorola - MPS6571 Transistor, NPN.

Status: Discontinued

Max voltage: 20V.

Max current: 50mA.

Dissipation: 625mW.

Package: TO-92 plastic, gold leads.

Operating temperature: -55 to 150 Deg C.

Note: Test dotted/test painted.

Functional Equivalents: 2N4062, 2N4059, 2N717, BC183, 2N2220, BC184B, 2N5220, 2N5449, 2N3707, 2N4061, 2N5450

Learn More

Transistor, NPN. Max voltage: 300V. Max current: 3.5 Amp. Dissipation: 100 watt. Package: TO-3 steel/aluminum. P/N: MJ3028. Application: Class A vertical deflection circuits. Note: Vertical output, high voltage, silicon. Learn More

Transistor, NPN. Max voltage: 80V. Max current: 10Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: MJ3001. Application: GP amplifier. Note: Medium power complementary silicon darlington. Learn More

Transistor, N-Channel FET. Max voltage: 50V. Max current: 15Amp. Gain: 75 watt. Package: TO-220. P/N: MTP15N06E. Note: TMOS Power Field Effect Transistor, 0.1 Ohm. Operating temperature: -65 to 150 Deg C. Learn More

Transistor, NPN/PNP. Max voltage: 150V. Max current: 500mA. Dissipation: 750mW each die/1700mW (4) die equal power. Package: TO-116, 14 Dip. P/N: MPQ7051. Derate >25 degC: 5.98mW each die/13.6mW (4) die equal power. Note: Quad complementary pair transistor. Operating temperature: -55 to 150 Deg C. Learn More

Transistor, NPN. Max voltage: 450VCEO, 850VCEV. Max current: 15Amp. Dissipation: 175 Watt. Package: TO-3 steel. P/N: MJ16010. Note: Silicon. Learn More

Transistor, NPN. Max voltage: 120VCEO, 200VCBO. Max current: 15 Amp. Dissipation: 180 watt. Package: TO-3 steel, Used/removed from equipment. P/N: MJ15015. Note: Operating temperature: -65 to 200 Deg C. Silicon. Learn More

Transistor, NPN. Max voltage: 120VCEO, 200VCBO. Max current: 15 Amp. Dissipation: 180 watt. Package: TO-3 steel. P/N: MJ15015. Note: Operating temperature: -65 to 200 Deg C. Silicon. Learn More

Motorola - MRF325 - Transistor, NPN.

Designed primarily for wide-band large-signal output amplifier stages in the 100 to 500MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts Minimum Gain 8.5 dB Efficiency = 54% (Min) Built­In Matching Network for Broadband Operation Using Internal Matching Techniques 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization for High Reliability Applications

Max Voltage: 33VCEO, 60VCBO.

Max Current: 3.4Adc.

Dissipation: 82 watt.

Package: Case 316-01, Style 1.

Operating Temperature: -65 to 150 Deg C.

Broadband RF. Silicon. 30W, 225 to 400MHz.

Guaranteed Performance @ 400MHz, 28Vdc /Output Power = 80 watts over225 to 400 MHz Band
Minimum Gain = 7.3 dB@ 400MHz

Note: Used/Removed from equipment and may have be soldered.

Learn More

Transistor, N Channel JFET. Max voltage: 30V. Max current: 50mA. Dissipation: 225mW. Package: SMD SOT-23. P/N: MMBF4391LT1. Note: Switching. RDS on: 30 Ohm. Package of 20. Learn More