Transistors

Transistor, PNP. Max voltage: 80V. Max current: 1Amp. Dissipation: 25 watt. Package: TO-66. P/N: 2N4900. House numbered: 3720743. Learn More

Transistor, PNP. Max voltage: 60V. Max current: 1Amp. Dissipation: 25 watt. Package: TO-66 steel. P/N: 2N4899. Note: Silicon. Learn More

MITSUBISHI - 2SC1013 - Transistor, NPN.

Status: Discontinued

Voltage: 20VCE, 35VCBO.

Current: 1.5 Amp.

Frequency: 70 MHz

Dissipation: 7 watt.

Package: TO-202.

Original Mitsubishi - New Old Stock

Alternates: 2SD612, 2SC1173, 2SC1096, 2SC830, 2SC1226, ECG300

Equivalents: 2SC100, 2SC1000, 2SC1000GTM, 2SC1001, 2SC1002, 2SC1003, 2SC1003A, 2SC1004, 2SC1004A, 2SC1005

Applications: AF, RF, and Switching Applications

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Transistor, N Channel MOSFET. Max voltage: 200V. Max current: 8 Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: MTM8N20. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. TMOS power. RDS on: 0.4 Ohm @ 4 Amp. Used/Removed from equipment. Learn More

Transistor, N Channel FET. Max voltage: 150V. Max current: 20 Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: MTM20N15. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. RDS on: 0.12 Ohm @ 10 Amp. Used/removed from equipment. Learn More

MICRO POWER - MP318 - Transistor, NPN. TO-71 Gold Leads Status: Discontinued Complementary Tightly Matching, Monolithic Dual NPN Device. High current gain (hfe) and Low offset (Vbe) and low temperature drift Transistor, Dual NPN. Max voltage: VBE1-1 1mV max. 25VCEO. Max current: 20mA. Dissipation: 500mW. Package: TO-71-6 Gold Leads. Type: Silicon Monolithic Transistor Pair. Transistion Frequency 100MHz. Alternate: LS318 Rare – Difficult Dual Transistor to find. Complementary Tightly Matching, Monolithic Dual and Single NPN and PNP Devices. Direct replacements for the Analog Devices MAT series High current gain (hfe) and Low offset (Vbe) and low temperature drift Applications: Ideal for Tight Matching, Small Signal, Amplifier and Switching Applications. Learn More

MAXIM - MAX487EPA

ESD-Protected.

Slew-Rate-Limited.

Low-Power.

RS-485/RS-422 Transceivers Socket PULLS - Guaranteed not DOA.

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Transistor, NPN. Voltage: 80V. Current: 10Amp. Dissipation: 125 watt. Operating temperature: -65 to 150 Deg C. Package: TO-218. Note: Silicon darlington. Bulk packaged. New. Learn More

Transistor, PNP. Voltage: 50VEBO, 100VCBO. Current: 10 Amp. Dissipation: 800mW. Package: TO-3 steel. Note: Germanium. Learn More

Transistor, NPN. Voltage: 15VCEO, 30VCBO. Current: 50mAdc. Dissipation: 200mW. Package: TO-72-4 gold leads. Note: RF/IF oscillator. Silicon. Note: Manufacture logo "NP". Learn More

Transistor, NPN. Voltage: 15VCEO, 30VCBO. Current: 50mAdc. Dissipation: 350mW. Operating temperature: -55 to 150 Deg C. Package: TO-92, plastic. Note: Silicon. Amplifier transistor. Learn More

Transistor, NPN. Voltage: 40VCEO, 60VCBO. Current: 2Adc. Dissipation: 1.5 Watt. Operating temperature: -55 to 150 Deg C. Package: TO-92, plastic. Note: Silicon. Amplifier transistor. Learn More

Transistor, NPN. Voltage: 25V. Current: 100mAdc. Dissipation: 350mW. Operating temperature: -55 to 150 Deg C. Package: TO-92, plastic. Note: Silicon. Learn More

Transistor, PNP. Voltage: -30V. Current: -500mAdc. Dissipation: 625mW. Operating temperature: -55 to 150 Deg C. Package: TO-92, plastic. Note: Silicon, darlington. Mixed manufactures. Package of 500 pieces. Learn More

SILICON VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 10.0 MAXIMUM INTERBASE VOLTAGE CURRENT RATING PER CHARACTERISTIC 50.00 MAXIMUM EMITTER CURRENT, DC POWER RATING PER CHARACTERISTIC 600.0 MAXIMUM TOTAL POWER DISSIPATION TO-5 TRANSISTOR Learn More

Transistor, NPN. Max voltage: 100V. Max current: 30Amp. Dissipation: 225 watt. Package: TO-3 steel. P/N: PMD18K100. Operating temperature:-65 to 200 Deg C. Note: Silicon epitaxial darlington. Learn More

Transistor, NPN. Max voltage: 100V. Max current: 20Amp. Dissipation: 200 watt. Package: TO-3 steel. P/N: PMD16K100. Operating temperature:-65 to 200 Deg C. Note: Silicon epitaxial darlington. Learn More

Transistor, NPN. Max voltage: 100V. Max current: 8Amp. Dissipation: 100 watt. Package: TO-3 steel. P/N: PMD10K80. Operating temperature:-65 to 200 Deg C. Note: Silicon epitaxial darlington. Learn More

KS - 2N4403 Transistor, PNP.

Voltage: 40V.

Current: 600mA.

Dissipation: 625mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Note: Silicon.

Package of 12.

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Transistor, MOSIGBT. Max voltage: 500V. Max current: 30Amp. Dissipation: 200 Watt. Package: TO-3 (TO-204). P/N: IXGM30N50A. Note: Time: 800ns. Learn More

Transistor, PNP. Max voltage: 45V. Max current: 200mA. Dissipation: 500mW. Package: TO-92 plastic. P/N: JA101-P. Note: Package of 25. General purpose. From manufactures new T/R. Learn More

Transistor, N Channel MOSFET. Max voltage: 70V. Max current: 12Amp. Dissipation: 79 watt. Package: TO-220. P/N: IRF533. Operating temperature: -55 to 175 Deg C. Note: Enhancement mode silicon gate. RDS on: 0.23 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 80V. Max current: 75Amp. Package: TO-220AB. P/N: HUF75545P3. Operating temperature: -55 to 175 Deg C. Note: RDS on 0.01 Ohm. UltraFET. Learn More

Transistor, P CH Mosfet. Max voltage: 60V. Max current: 5.1 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR9014. Note: RDS On: 0.5 Ohm.

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