Transistors

IR - IRF340 Transistor, N CH Fet.

Voltage: 400V.

Current: 10Amp.

RDS on: 0.55 Ohm.

Dissipation: 125 watt.

Operating temperature: -55 to 150 deg C.

Package: TO-3 steel.

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Transistor, N Channel Mosfet. Max voltage: 20Vdss. Gate source +/-12V. Max current: 4.2A @ 125 Deg, 3.4A @ 70 Deg. Dissipation: 1.3W. Package: SMD SOT-23. P/N: IRLML2502TR. Note: RDS on: 0.045 Ohm. Learn More

Transistor, N Channel Mosfet. Max voltage: 20Vdss. Gate source +/-12V. Max current: 1.2A @ 125 Deg, 0.95A @ 70 Deg. Dissipation: 540mW. Package: SMD SOT-23. P/N: IRLML2402TR. Note: RDS on: 0.25 Ohm. Learn More

Transistor, N Ch FET. Max voltage: 40V. Max current: 50mA. Dissipation: 300mW. Package: TO-72, gold leads. P/N: 2N4117A. Application: General purpose amplifier. Note: Silicon. Learn More

IR - IRF540N Transistor, N Channel MOSFET.

The IRF540 is an N-Channel Mosfet. This mosfet can drive loads upto 23A and can support peak current upto 110A. It also has a threshold voltage of 4V, which means it can easily driven by low voltages like 5V. Hence it is mostly used with Arduino and other microcontrollers for logic switching. Speed control of motors and Light dimmers are also possible with this Mosfet since it has good switching characteristics.

Status: Discontinued

Max voltage: 100V.

Max current: 28Amp.

Dissipation: 85 watt.

Package: TO-220.

Operating temperature: -55 to 175 Deg C.

Note: Low gate charge StripFet.

RDS on: 0.077 Ohm.

Alternates: RFP30N06, IRFZ44, 2N3055, IRF3205

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Transistor, N Channel mosfet. Max voltage: 350V. Max current: 4.5Amp. Dissipation: 75 watt. Package: TO-3 steel (TO-204AA). P/N: IRF333. Note: RDS(on) 1.5 Ohm. Learn More

Transistor, N Channel FET. Max voltage: -25V. Max current: 50mA. Dissipation: One side 367mW. Both sides: 500mW. Package: TO-99-7 leads. P/N: 2N5912. Derate >25 degC: One side 3.0mW/oC. Both sides: 4.0mW/oC. Operating temperature: -55 to 150 Deg C. Note: Dual amplifier. Learn More

Transistors. Cool MOS 560VDS 21A 0.19 Ohm TO-220-3. Learn More

Infineon - BC847C - Transistor, NPN.

Max voltage: 45VCEO, 50VCBO.

Max current: 100mA.

Dissipation: 330mW.

Case: SOT-23 SMD.

Note: Silicon.

Package of 10.

Alternate: BC847CE6327HTSA1

 

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Transistor, NPN. Voltage: 80VCEO, 100VCBO. Currect: 30Amp. Dissipation: 250 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3 metal. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 100V. Max current: 50Amp. Dissipation: 300 watt. Package: TO-3. P/N: RCA9229C. Operating temperature: -65 to 150 Deg C. Note: Silicon darlington. Learn More

Transistor, PNP. Max voltage: 25V. Max current: 1.5Amp. Dissipation: 8 watt. Package: TO-126. P/N: 2SA738. Note: Silicon. Learn More

Transistor, N CH Mosfet. Max voltage: 150V. Max current: 10Amp. Package: TO-220, manufactures trimmed and staggered leads. P/N: RFP10N15. Note: RDS On: 0.3 Ohm. Learn More

Transistor, N Channel Mosfet. Max voltage: 80V. Max current: 8Amp. Dissipation: 60 watt. Package: TO-220. P/N: RFP12N08L. Operating temperature: 150 Deg C. Note: RDS on: 0.2 Ohm. Learn More

Transistor, NPN. Max voltage: 25V. Max current: 0.8Amp. Dissipation: 0.9 watt. Package: TO-92M (TO-92MOD) plastic. P/N: 2SD1922E. Note: Silicon epitaxial. New, bulk packaged. Package of 10. Learn More

Transistor, N CH Mosfet. Max voltage: 50V. Max current: 50Amp. Package: TO-220. P/N: RFP15N05. Note: RDS On: 0.14 Ohm. Learn More

Transistor, P CH Mosfet. Max voltage: 120V. Max current: 10Amp. Package: TO-220. P/N: RFP10P12. Note: RDS On: 0.30 Ohm. Learn More

Harris Corp - RFP15P05 Transistor, P CH Mosfet.

Status:  Discontinued

Drain Current-Max (Abs) (ID): 15.0 A

Drain Current-Max (ID): 15.0 A

Drain-source On Resistance-Max: 0.15 ohm

DS Breakdown Voltage-Min: 50.0 V

FET Technology: METAL-OXIDE SEMICONDUCTOR

Number of Elements: 1.0, Number of Terminals: 3

Operating Mode; ENHANCEMENT MODE

Operating Temperature-Max: 175.0 C

Package Body Material  PLASTIC/EPOXY

Power Dissipation Ambient-Max: 80.0 W

Power Dissipation-Max (Abs): 67.5 W

Pulsed Drain Current-Max (IDM): 40.0 A

Turn-off Time-Max (toff): 100.0 ns

Turn-on Time-Max (ton): 60.0 ns

Additional Feature: AVALANCHE RATED

Alternate (Functional equivalent); Texas Instruments SMP60N06-14

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HOLLAND - 2N2654 Transistor, PNP. Small Signal Transistor.

Max voltage: 25V.

Max current: 10mA.

Dissipation: 100mW.

Package: TO-39 metal.

Germanium 250MHz.

Vintage New Old Stock

Alternates: AE121-178-201-202, GT320B, AF139/239

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Harris Corp - IRFF122 Transistor, N Channel MOSFET.

Max voltage: 100VGS.

Max current: 5Amp.

Dissipation: 20 watt @ 25 Deg C.

Package: TO-205AF (low profileTO-39).

Operating temperature: -55 to 150 Deg C.

Note: Enhancement mode silicon-gate power MOS. RDS on: 0.40 Ohm.

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GM/DELCO - DTS801 - Transistor, NPN. 100W TO-3 Steel Case. Material: Silicon, Steel Enclosure Polarity: NPN Power Dissipation: 100 W Maximum Collector-Base Voltage(VCBO: 1000 V Maximum Collector-Emitter Voltage (VCEO): 800 V Maximum Collector Current: 2 A Maximum Operating Junction Temperature: 140 °C Transition Frequency: 1.5 MHz Forward Current Transfer Ratio (hFE Value):20 Package: TO3 Steel Learn More

Transistor, NPN. Max voltage: 1000V. Max current: 3Amp. Dissipation: 50 Watt. Package: TO-3 steel. P/N: DTS702. Note: Silicon. Military NSN 5961-00-261-7607. High Voltage. Learn More

Transistor, NPN. Max voltage: 275VCEO, 600VCBO. Max current: 10Amp. Dissipation: 125 Watt. Package: TO-3 steel. P/N: DTS518. Note: Silicon. Learn More

Transistor, NPN. Max voltage: 325V. Max current: 2.0Amp. Dissipation: 75 watt. Package: TO-3 steel. P/N: DTS413. Note: Silicon. Learn More