Transistors

Transistor, N-Channel mosfet. Voltage: 60V. Current: 115mA. Dissipation: 625mW. Package: SOT-23-3 SMD. From: Package of 100. Learn More

EUPEC - FZ1200R12KF4 - Transistor, IGBT.

VCES: 1200V.

Current: 1200Amp.

Dissipation: 7800 watt.

Item Number: FZ1200R12KF4

Manufacturer:  Infineon

Item Category:  Transistors

Subcategory: IGBTs

Type: Single

Vges +/-: +/- 20

Iges Max: 0.4 MicroAmps

Vge(th) Min/Max: 6.5 Volts

Vce(sat) Max: 3.2 Volts

Dimensions; Height (mm): 38, Width (mm): 130, Depth (mm): 140 H x W x D (in.): 1.5 x 5.12 x 5.51

Net Weight: 3 lb 5 oz

Package: Module.

Operating temperature: -40 to 125 Deg C.

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Transistor, PNP. Voltage: 60V. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3. Note: Silicon. Gently used/removed from equipment. Learn More

Transistor, PNP. Voltage: 60V. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3. Note: Silicon. Learn More

Transistor, N-Channel mosfet. Voltage: 60V. Current: 115mA. Dissipation: 625mW. Package: SOT-23-3 SMD. Package of 100. Learn More

DYNEX - GP1200FSS12S - Transistor, IGBT.

VCES: 1800V.

Current: 1200Amp.

Single Switch.

Package: Module.

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Transistor, NPN. Max voltage: 50VCEO, 60VCBO. Max current: 150mA. Dissipation: 150mW. Package: SOT-523 SMD. P/N: 2DC4617R-7-F. Note: Bipolar. Learn More

Transistor, PNP Germanium. Max voltage: 40VCB emitter open, 20VEB collector open. Max current: 15Amp, Base current 4Amp. Package: TO-36. P/N: 2N441. Note: Operating temperature: 100 Deg C. Learn More

Transistor, NPN. Max voltage: 900VCEO. Max current: 3Amp. Dissipation: 50 Watt. Package: TO-3 steel. P/N: DTS712. Note: Silicon. Learn More

Transistor, NPN. Max voltage: 120V. Max current: 15Amp. Dissipation: 60 watt. Package: TO-3 steel. P/N: DTG2400. Note: Germanium. Learn More

Transistor, PNP. Max voltage: 80VCEO, 100VCBO. Max current: 8Amp. Dissipation: 90 watt. Package: TO-127var. P/N: 2N5982. Note: Silicon. Cross NTE183. Learn More

TRANSISTOR GERMANIUM PNP POWER (2N1518) TO-3 STEELV(BR)CEO (V) = 40 V(BR)CBO (V) = 50 I(C) Abs.(A) Collector Current = 25Absolute Max. Power Diss. (W) = 87 I(CBO) Max. (A) = 100u@V(CBO) (V) (Test Condition) = 2.0 V(CE)sat Max.(V) = .70@I(C) (A) (Test Condition) = 25 @I(B) (A) (Test Condition) = 4.0h(FE) Min. Static Current Gain = 15 h(FE) Max. Current gain. = 60@I(C) (A) (Test Condition) = 15 @V(CE) (V) (Test Condition) = 4.0Manuf: CLEVITE Learn More

Transistor, PNP. Voltage: -40VCEO, 60VCBO. Current: -0.6Amp. Dissipation: 1.8 watt. Operating temperature: -65 to 200 Deg C. Package: TO-18 (TO206AA). Note: Silicon planar epitaxial. Switching. Military JAN. Learn More

Transistor, PNP. Max voltage: 40V. Max current: 200mA. Dissipation: 1.2 watt. Package: SOT-89 SMD. P/N: CXT3906. Note: Silicon. Rohs compliant. Package of 20. Learn More

Transistor, PNP. Voltage: 80V. Current: 5 Amp. Dissipation: 35 Watt. Package: TO-3 steel. P/N: JAN2N1011. Note: Germanium. New older stock, rusty. Learn More

Transistor, NPN. Max voltage: 120V. Max current: 10Amp. Dissipation: 120 watt. Package: TO-3. P/N: 2N4348. Learn More

Transistor, NPN. Max voltage: 400V. Max current: 50Amp. Dissipation: 175 watt. Package: TO-3 steel. P/N: PTC7002. Note: Darlington. Learn More

2SC2314 E Transistor, NPN.

Max Voltage: 45VCEO, 75VCBO.

Max Current: 1 Amp.

Dissipation: 750mW.

DC Current Gain hFE: 200

Package: TO-126.

Storage Temperature: -55 to 150 Deg C.

Application: 27MHz CB Transceiver Driver.

Note: Silicon Epitaxial Planar.

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Transistor, P Channel Vertical DMOS FET. Voltage: -60 VDS. Current: ID (Cont) 280mA. RDS (on): 5 Ohm. Dissipation: 700mW. Operating temperature: -55 to 150 Deg C. Package: TO-39/TO-5. Note: Enhancement mode. Learn More

Transistor, N-CH Vertival DMOS FET. Voltage: 400VDS. Current: 90mA. RDS (on): 50 Ohm. Dissipation: 700mW. Operating temperature: -55 to 150 Deg C. Package: small TO-92, plastic. Note Enhancement mode. Learn More

Westinghouse - 2N3773 Transistor, NPN. Steel TO-3

Max voltage: 140V.

Max current: 16Amp.

Dissipation: 150 watt.

Package: TO-3 steel.

House numbered 7-4.

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Transistor, N Channel FET. Max voltage: 50V. Max current: 200mA. Dissipation: 360mW. Package: SOT-23 SMD T/R. P/N: BSS138TA. Note: Enhancement mode vertical DMOS. Learn More

Transistor, N Channel Fet. Max voltage: 60V. Max current: 270mA. Dissipation: 625mW. Package: TO-92 Compatible. P/N: VN10LP. Note: Enhancement mode vertical DMOS. RDS on: 5 Ohm. Learn More

Transistor, NPN. Max voltage: 100VCE, 125VCBO. Max current: 6Amp. Dissipation: 100 watt. Package: TO-36 hermetically sealed. P/N: 151-10. Note: Silicom. Military NPN 5961-00-934-3234, cage No 05277. Learn More