Transistors

Transistor, NPN. Max voltage: 80V. Max current: 3 Amp. Dissipation: 85 watt @ 25 Deg C. Package: TO-53-3 leads. P/N: Base ID: 2N424. Military P/N: JAN2N424. Note: Silicon. Used/Removed from equipment. Learn More

UPI - 2N1370 - Transistor, PNP.

Type of Transistor: BJT

Type Designator: 2N1370

Material of Transistor: Germanium

Polarity: PNP

Maximum Collector Power Dissipation: 0.25 W

Maximum Collector-Base Voltage: 25 V

Maximum Collector-Emitter Voltage: 25 V

Maximum Emitter-Base Voltage: 10 V

Maximum Collector Current: 0.2 A

Maximum Operating Junction Temperature: 75 °C

Transition Frequency: 0.4 MHz

Forward Current Transfer Ratio (hFE Value): 45

Package: TO 5

Genuine UPI - New Old Stock - Tarnished.

Note: Germanium.

Alternate: NSN 5961-00-964-8656

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U310 Transistor, House Numbered HG879 N CH FET. 

Transistor, N Channel FET.

Max voltage: -25VBR. Max current: 20mA.

Dissipation: 500mW.

Package: TO-52 gold leads.

P/N: U310.

Note: Silicon junction.

Note: House Numbered HG879.

Test dotted.

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Germanium PNP TO-39 NEW ANTIQUE Learn More

Sanyo ? - STK5478 - Package: Thick Film Hybrid Power Amplifier, 12 Pin SIP. Features: High output power: 2 x 40W (8Ω) Low distortion: 0.02% (1kHz, 8Ω) Low noise: -90dB High efficiency: 90% Compact size: 12mm x 12mm Low power consumption Application: The STK5478 is suitable for use in audio systems, such as car audio, home audio, and PA systems. Package: Thick Film Hybrid 12 Pin SIP. Leads maybe misplaced. Appears to be a Sanyo Japan product. Learn More

Unidentified MFG - D45H5 - Transistor, PNP. Max Voltage: 45V. Max Current: 10Amp. Dissipation: 50 watt. Package: TO-220AB. Operating Temperature: -55 to 150 Deg C. Learn More

Transistor, N Channel MOSFET. Max voltage: 600V. Max current: 4 Amp. Dissipation: 75 watt. Package: TO-220. P/N: BUZ90A. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode, avalanche rated. TMOS power. RDS on: 2 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 50V. Max current: 33Amp. Dissipation: 90 watt. Package: TO-220. P/N: BUZ11S2. Operating temperature: -65 to 175 Deg C. Note: StripFet. RDS on: 0.03 Ohm. Learn More

Transistor, N Channel FET. Max voltage: 40V. Max current: 50mA. Dissipation: 350mW. Package: TO-18 hermetically sealed. P/N: BSV78. Note: Unmarked parts. Learn More

BFX29 Transistor, PNP.

Max voltage: 60V.

Max current: 600mA.

Dissipation: 600mW.

Package: TO-39 metal.

Storage temperature: -65 to 200 Deg C.

Application: General purpose industrial.

Note: Silicon epitaxial.

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Transistor, PNP. Voltage: -32V. Current: -100mAdc. Dissipation: 340mW. Operating temperature: -65 to 200 Deg C. Package: TO-18. Note: Silicon. Unmarked devices. Learn More

Transistor, NPN RF. Max voltage: 12VCEO 20VCBO. Max current: 50mA. Dissipation: 300mW. Package: TO-50 plastic case. P/N: BFR91. Note: Silicon planar. RF & Microwave. Manufacture may in fact be Motorola? Learn More

Transistor, NPN. Max voltage: 15VCEO, 25VCBO. Max current: 25mA. Dissipation: 200mW. Package: SOT-23 SMD. P/N: BFS17. Storage temperature: -55 to 150 Deg C. Application: For broadband amplifiers up to 1 GHz. Note: Silicon planar RF. Learn More

BSY45 Transistor, NPN, General Purpose Audio Output Video Driver.

Type Designator: BSY45

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Package: TO39 metal

Weight: 1 oz.

Alternate for the following Vintage Transistors: NTE128, 2N243, 2N342, 2N1340, 2N1342, 2N3444, BFY14B, BFY14C, BFY14D, BFY41, BFX47, BFY45, BFY55, BFY78  - Always confirm your application specification requirement when Substituting.

 

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Transistor. Unknown values. Package: TO-18 gold leads. New. Learn More

Transistor, NPN RF. Max voltage: 15VCEO 20VCBO. Max current: 30mA. Dissipation: 300mW. Package: TO-50 plastic case. P/N: BFR90. Note: Silicon planar. RF & Microwave. Cross NTE65. Manufacture may in fact be Motorola? Learn More

BF961 Transistor, N Channel Dual gate MOSFET.

Status: Discontinued

Max voltage: 20V.

Max current: 30mA.

Dissipation: 200mW.

Package: TO-50 plastic.

Storage temperature: -55 to 150 Deg C.

Application: Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

Note: Tetrode, depletion mode.

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Transistor, PNP. Voltage: 50V. Current: 3 Amp. Dissipation: 20 watt. Package: TO-39. P/N: 2N1040. Note: germanium. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 8 Amp. Dissipation: 75 watt. Package: TO-3 steel. P/N: 2N6301. Note: Silicon. Learn More

Transistor, PNP. Voltage: -100V. Current: -100mA. Dissipation: 300mW. Package: TO-92. Note: Silicon epitaxial. Learn More

Germanium Transistor, PNP. Max voltage: 12VCEO 32VCBO. Max current: 2Amp. Dissipation: 6 watt. Package: TO-66. P/N: 2SB463. Operating temperature: 85 Deg C. Note: Germanium. Note: Cross NTE131, ECG131. New older stock.

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NEW RF SIL NPN HI PWR SOE STUD GOLD 30W 65V Learn More

Transistor, NPN. Max voltage: 20V30V. Max current: 100mA. Dissipation: 200mA. Package: TO-92 large. P/N: 2SC712. Note: Silicon. Marked C712. Learn More

Transistor, NPN. Max voltage: 25VCEO, 30VCBO. Max current: 30mA. Dissipation: 200mW. Package: TO-92. P/N: 2SC710. Operating and storage temperature: 125 Deg C. Note: Silicon. Learn More