Transistors

Transistor, NPN. Max voltage: 100VCEO/150VCBO. Max current: 5Amp. Package: TO-59 stud. P/N: 2N2151. Application: Fast switching. High frequency switching and amplifying. Note: Planar transistors. Learn More

Military Silicon Transistor - Junction contact - stud - herm sealed - NOMINAL THREAD SIZE 0.164 INCHES , VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN POWER RATING PER CHARACTERISTIC 15.0 MAXIMUM TOTAL POWER DISSIPATION MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN MILITARY CAGE 01281 5961-00-465-8439 CERAMIC GOLD MILITARY BULK Learn More

Transistor, N Channel FET. Max voltage: 20V. Max current: 50mA. Dissipation: 300mW. Package: TO-72. P/N: 1855-0269. Note: Silicon. Insulated gate type. Military NSN 5961-01-142-7897. (Manufactures logo: TZ). Learn More

Transistor, PNP. Max voltage: 65VCEO, 80VCBO. Max current: 300mA. Dissipation: 300mW. Package: TO-39 gold leads. P/N: LT5839. Note: Silicon 1.5GHz. Bipolar UHF Microwave. Military NSN 5961-01-302-5833. Learn More

Toshiba - 2SD717 - Silicon NPN High Freq Epitaxial Planar Transistor

2 DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS.

Low Collector Saturation Voltage: VCE (sat)=0.4V (Max.)

TO-3P

Genuine Toshiba - New Old Stock - Rare

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Toshiba - 2SA1012 Transistor, PNP.

Voltage: -50VCEO, -60 VCBO.

Current: -5Amp.

Dissipation: 25 watt.

Storage temperature: -55 to 125 Deg C.

Package: TO-220.

Note: Silicon epitaxial.

Genuine Vintage Toshiba 2SA1012 - New Old Stock

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Transistor, NPN. Max voltage: 30VCEO, 35VCBO. Max current: 50mA. Dissipation: 200mW. Package: TO-92 plastic. P/N: 2SC2669. Application: High frequency amplifier. Note: Silicon epitaxial. Learn More

Transistor, NPN. Max voltage: 30VCEO, 35VCBO. Max current: 800mA. Dissipation: 600mW. Package: Package: TO-92. P/N: 2SC509. Note: Silicon. Learn More

Toshiba - 2SC2562 - Transistor, NPN.

Max voltage: 50VCEO, 60VCBO.

Max current: 5 Amp.

Dissipation: 25 watt.

Package: TO-220AB.

Operating temperature: -55 to 150 Deg C.

Application: High Current Switching.

Note: Silicon Epitaxial.

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Transistor, NPN. Max voltage: 300V. Max current: 0.1 Amp. Dissipation: 6 watt. Package: TO-66. P/N: 2SC515A. Storage temperature: -55 to 150 Deg C. Application: For use in line-operated color TV chroma output circuits and sound output circuits. Note: Silicon. High breakdown voltage. Learn More

Toshiba - TD62503P IC. Bipolar Digital NPN Transistor Array, 7 Single Driver.

IC 200mA, 35V, 7 Channel, NPN, Si, Small Signal.

IR2C30.

Package: 16 Dip.

Note: Silicon monolithic.

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Transistor, module. Max voltage: 880VCEO, 1000VCBO. Max current: 75Amp. Dissipation: 400 watt. P/N: MG75M2YK1. Learn More

Transistor, NPN. Max voltage: 160V. Max current: 1.5Amp. Dissipation: 1 watt. Package: TO-202. P/N: 2SC3117. Application: Switching. Note: Epitaxial silicon planar. Learn More

Transistor, PNP. Voltage: -160VCEO, -180VCBO. Current: 1.5Amp. Dissipation: 1 watt. Storage temperature: -55 to 150 Deg C. Package: TO-126. Note: Silicon. epitaxial planar. Learn More

Transistor, NPN. Max voltage: 30V. Max current: 20mA. Dissipation: 100mW. Package: TO-92 (C3193). P/N: 2SC381. Note: Silicon epitaxial planar. Learn More

TI/ST - 2N5401 - Transistor, PNP.

Max Voltage: 150V.

Collector current: 600mAdc.

Dissipation: 625mW.

Package: TO-92.

Note; Silicon.

Package of 10.

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Transistor, Si NPN Power BJT�. Max voltage: 700Vceo, 1500Vcex. Max current: 4 AMP. Package: TO-3. Learn More

Texas Instruments - TIP31C Transistor, NPN.

Max voltage: 100VCEO, 100VCBO.

Max current: 3 Amp.

Dissipation: 40 watt.

Gain: 3MHz.

Package: TO-220. P/N: TIP31C.

Application: Medium power linear switching applications.

Note: Epitaxial silicon.

Junction temperature: 150 Deg C.

Storage temperature: -65 to 150 Deg C.

Package of 3.

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PNP 175W DARL 60V 10A TO-3 Steel Learn More

Transistor, NPN. Max voltage: 40V. Max current: 6Amp. Dissipation: 65 watt. Package: TO-220. P/N: TIP41. Operating temperature: -65 to 150 Deg C. Note: Silicon. Learn More

Texas Instruments - TIP31A - Transistor, NPN.

Max voltage: 60VCEO, 60VCBO.

Max current: 3 Amp.

Dissipation: 40 watt.

Gain: 3MHz.

Application: Medium power linear switching applications.

Note: Epitaxial silicon.

Junction temperature: 150 Deg C. Storage temperature: -65 to 150 Deg C.

TO-220

 

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Texas Instruments - TIP125 - Transistor, PNP Darlington.

Max voltage: 60V.

Max current: 5Amp.

Package: TO-220. 

Operating temperature: -65 to 150 Deg C.

Application: general purpose amplifier and low speed switching applications.

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Phototransistor, NPN. Gallium arsenide diode infrared source optically coupled to a high-gain NPN silicon phototransistor. Package: 6 Dip. Learn More

SILICON PNP JUNCTION CONTACT TRANSISTOR 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPENNEW HEAVY TO-3 STEEL DBL MARKED 10031210-102 ?? 5961-00-882-8571 Learn More