Transistors

SYNERTEK - BU406 Transistor, NPN.

Status: Discontinued

Max voltage: 200VCEO, 400VCBO.

Max current: 7 Amp.

Dissipation: 60 watt.

Package: TO-220.

Storage temperature: -65 to 150 Deg C.

Application: Horizontal deflection for monochrome TV.

Note: Silicon epitaxial planar.

Very high speed switching.

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Transistor, PNP. Voltage: 20VCEO, 25VCBO. Current: 100mA. Dissipation: 2 watt. Operating temperature: -65 to 200 Deg C. Package: TO-46 gold leads. Note: Silicon. Learn More

Transistor, PNP. Voltage: 10VCEO, 15VCBO. Current: 100mAdc. Dissipation: 400mW. Operating temperature: -65 to 200 Deg C. Package: TO-46 long gold leads. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 35V. Max current: 200mA. Dissipation: 1.2 watt. Package: TO-18 gold leads. P/N: 2N3829. Application: High speed switching. Note: Silicon. Learn More

Transistor, NPN. Max voltage: 45V. Max current: 0.025Amp. Dissipation: 150mW. Package: TO-39 gold leads. P/N: 2N332. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 100V. Max current: 5Amp. Dissipation: 50 watt. Package: TO-3. P/N: 2N1021. Note: Germanium. Learn More

Transistor, PNP. Voltage: 60V. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3 steel new. Note: Silicon. Learn More

NPN Silicon 15.0V max coll to base emitter open and 6V max coll to emitter base open and 4v max breakdown emitter to base coll open and 11V max .100.00 max collector cutoff dc with base short-circuited to emitter.300.0 max coll power dissipation.TO-18 GOLD OBSOLETE Learn More

Texas Instruments - JAN2N2222A - NSN 5961-00-951-8757 - Transistor, NPN.

Military, MIL-PRF-19500/255

Package: Bulk

Product Status: Active

Transistor Type: NPN

Current - Collector (Ic) (Max): 800 mA

Voltage - Collector Emitter Breakdown (Max): 50 V

Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA

Current - Collector Cutoff (Max): 50nA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V

Power – Max: 500 mW

Operating Temperature: -65°C ~ 200°C (TJ)

Package / Case: TO-206AA, TO-18-3 Metal Can

Application: High Speed Switching.

Note: Military NSN 5961-00-951-8757.

Silicon planar.

Alternate: 4192800-227

Mil Packaged

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Transistor, NPN. Max voltage: 50VCE, 70VCB. Max current: 0.5 Amp. Dissipation: 0.8 watt. Package: TO-39. P/N: Base id: 2N1711. Note: Silicon, 70MHz. Learn More

Transistor, NPN. Max voltage: 60VCEO, 70VCBO. Max current: 50mA. Dissipation: 300mW one section, 600mW both sections. Package: TO-99-6. P/N: 2N2920. Operating temperature: -65 to 200 Deg C. Note: Silicon, dual NPN planar. Learn More

Transistor, PNP. Max voltage: 30VCEO, 40VCBO. Max current: 3Amp. Dissipation: 20 watt. Package: Gold stud, with heatsink. P/N: 2N2552. Note: Germanium. Learn More

Transistor, NPN. 30VCE 55VCB 0.4Amp 5 watt. Package: TO-5 hermetically sealed. Note: Silicon. Operating temperature: 200 Deg C. Military NSN 5961-005481894. May cross 2N3866A. Learn More

Transistor, military. RCA 151-0211. Package: To-39 gold leads. New. Note: From military lot. Learn More

Synertek - 2N3439 - Transistor, NPN.

Max voltage: 350VCEO, 450VCBO.

Max current: 1Amp.

Dissipation: 10 Watt at 25 Deg C.

Package: TO-39. 

Operating temperature: 200 Deg C.

Note: Silicon epitaxial planar.

High Voltage.

New, bulk packaged.

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Transistor, NPN. Max voltage: 40VCEO, 75VCBO. Max current: 800mA. Dissipation: 800mW. Package: TO-39. P/N: 2N2219. Operating temperature: 175 Deg C. Application: High speed switching. Note: Silicon planar epitaxial. Military NSN 5961-00-050-7499. Learn More

TENNA - 2SA355 Transistor, PNP.

Type of Transistor: BJT

Type Designator: 2SA355

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation: 0.08 W

Maximum Collector-Base Voltage: 25 V

Maximum Emitter-Base Voltage: 1 V

Maximum Collector Current: 0.01 A

Maximum Operating Junction Temperature: 75 °C

Transition Frequency: 12 MHz

Forward Current Transfer Ratio (hFE Value): 90

Collector Capacitance: 4 pF

Package: TO1 Metal Can

Note: Germanium.

Equivalents: 2SA0879, 2SA100, 2SA1001, 2SA1002, 2SA1003, 2SA1004, 2SA1005, 2SA1006, 2SA1006A, 2SA1006B

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Transistor, PNP. Max voltage: 20VCEO/25VCBO. Max current: 100mA. Dissipation: 250mW one side/500mW both sides. Package: TO-78. P/N: 2N2807. Note: Amplifier/Switch. Learn More

TO-3 STEEL GE/RCA Learn More

Transistor, NPN. Max voltage: 80VCEO, 175VCBO. Max current: 5 Amp. Dissipation: 3 watt. Package: TO-61 stud. P/N: 2N1724. Operating temperature: -65 to 200 Deg C. Note: Silicon. Used/Removed from equipment. Learn More

Transistor, NPN. Package: TO-66 steel. P/N: 151-0148. Note: RCA for Tektronix. New. Military. Cross NTE175 . Learn More

SILICON NPN TRANSISTORS HERM SEALED 5961-00-752-0647 LG TO-39 GOLD Learn More

Transistor, NPN. Voltage: 50VCEO, 80VCBO. Current: 1 Amp. Dissipation: 0.36 watt. Frequency: 300MHz. Operating temperature: -65 to 200 Deg C. Package: TO-18 gold leads. Note: Silicon epitaxial planar. Learn More

N-CH Junction Type Transistors New Military TO-72/6 leads gold NSN 5961-00-482-0710, Solitron FD1121 or Freescale SFD1007 Learn More