Transistors

Transistor, NPN. Voltage: 80VCEO, 120VCBO. Current: 10Amp. Dissipation: 100 watt. Operating temperature maximum: 175 deg C. Package: stud TO-61, 3 leads. Military NSN 5961-00-018-1926. Note: Silicon. Learn More

Transistor. Unknown specifications. Package: TO-5 gold leads. P/N: 10054042. Note: New. Marked 054042. Learn More

Motorola - 2N2646 - Transistor, NPN.

Status: Discontinued

Max Voltage: 30V.

Max Current: 2Amp.

Dissipation: 300mW.

Original Motorola

Package: TO-18  

Note: New Old Stock.

Silicon Unijunction.

Package: TO-18, cut 1/8" leads. 

Note: Silicon Unijunction.

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Military NPN Transistor TO-39 New.Manuf by Motorola for HP. Learn More

Military Silicon NPN Transistor 20.00 Max collector current DC. Power rating per characteristic 200 Max total device dissipation 5961-00-520-8005 TO-72 gold leads. Freescale MM8006 Learn More

Transistor, PNP. Max voltage: 300V. Max current: 2 Amp. Dissipation: 35 watt. Package: TO-66 hermetically sealed. P/N: 1853-0414. Note: Silicon. Military NSN 5961-01-082-1978. Cross JAN2N6423. Learn More

Silicon PNP Transistor 40.0 max breakdown volt. Coll to Emitter Base open. Milityary NSN 5961-01-064-5736 TO-39 gold New.1853-0313 HP Part Number. Learn More

See also 2N3809 PNP Silicon 60.0 Min breakdown volt coll to emitter base open. New Military Transistors NSN 5961-01-242-5696 TO-99/6 metal. Learn More

2N2369A Transistor, NPN.

Max voltage: 15VCEO, 40VCBO.

Max current: 200mA.

Dissipation: 360mW.

Package: TO-18.

Operating temperature: -65 to 200 Deg C.

Note: Silicon.

Please note National Semiconductor's are TO-92 plastic PN2369.

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Transistor, NPN. Max voltage: 20VCEO, 30VCBO. Max current: 2Amp. Dissipation: 600mW. Package: TO-5. P/N: 2N1253. Note: Silicon. Used/Removed from equipment, cut leads. Learn More

Transistor, NPN. Max voltage: 40VCEO 60VCBO. Max current: 500mA. Dissipation: 400mW. Package: TO-18. New. P/N: 2N718. Note: Silicon. Cross NTE123A. Motorola and Texas Instruments, mixed. Learn More

Transistor? Specifications unknown. Package: TO-39 new. Nice. Learn More

Transistor, PNP. Max voltage: 120V. Max current: 500mA. Dissipation: 1.2 watt. Package: TO-126. P/N: 2SA794A. Note: Silicon epitaxial planar. Learn More

PNP HI SPD LINEAR TRANSISTOR TO-18/6 GOLD LEADS Learn More

MATSUSHITA - 2SB127 - Transistor, PNP. 32V, Germanium, TO-3 Steel Material of Transistor: Germanium, Intended as AF Power Amplifier / Switch Polarity: PNP Maximum Collector Power Dissipation (Pc): 40 W Maximum Collector-Base Voltage |Vcb|: 32 V Maximum Collector-Emitter Voltage |Vce|: 16 V Maximum Emitter-Base Voltage |Veb|: 10 V Maximum Collector Current |Ic max|: 3.5 A Max. Operating Junction Temperature (Tj): 85 °C Transition Frequency (ft): 0.06 MHz Forward Current Transfer Ratio (hFE), MIN: 25 Max current: 3.5Amp. Dissipation: 30 Watt. Package: TO-3 Steel Alternates: 2N1536, AD149, ASZ16 Note: Germanium Rare – New Old Stock. Learn More

Transistor, NPN. Max voltage: 25VCEO, 30VCBO. Max current: 1Amp. Dissipation: 750mW. Package: TO-92 plastic. P/N: 2SD592. Operating temperature: -55 to 150 Deg C. Application: For low-frequency output. Note: Silicon epitaxial. Learn More

Transistor, NPN. Max voltage: 20VCEO, 40VCBO. Max current: 1.2 Amp, 4 Amp peak. Dissipation: 17.7 watt. Package: Package: 92. P/N: 2SC892. Storage temperature: -40 to 175 Deg C. Note: Silicon epitaxial. Learn More

Transistor, NPN. Voltage: 35VCEO, 75VCBO. Current: 1 amp. Dissipation: 4 watt. Package: TO-202, tarnishing. Note: Silicon. Learn More

Microsemi - APTGF75DA120T1G – 1200V, 100A, 500W, Transistor, IGBT, New. The Microsemi APTGF75DA120T1G Transistor is a high-powered IGBT device designed for electrical equipment and industrial applications. With a maximum power dissipation of 500W and a maximum collector-emitter saturation voltage of 15V, this transistor is capable of handling demanding operating conditions. The SP1 packaging style and 12 pin module make it easy to install, while the through-hole mounting style ensures secure attachment. With a maximum operating temperature of 150C and a minimum operating temperature of -25C, this transistor is reliable and efficient for a wide range of industrial uses. Features · Fast Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated · Very low stray inductance - Symmetrical design · Internal thermistor for temperature monitoring · High level of integration. Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile · RoHS Compliant Status: Discontinued Product: IGBT Modules Configuration: Full Bridge Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 3.2 V Continuous Collector Current at 25 C: 100 A Gate-Emitter Leakage Current: 500 nA Pd - Power Dissipation: 500 W Package / Case: SP4 Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 100 C Maximum Gate Emitter Voltage: 20 V Mounting Style: Screw Mount Max voltage: 1200V. Max current: 75Amp. (100Amp 25 Deg C). Dissipation: 500 Watt. Package: 12 Pin Module. Package: SP1 Operating temperature: 80 Deg C. Application: AC and DC motor control. Switched mode power supplies. Power Factor Correction. Marked: APTGF75DA120T1G - 9464 - 1050. Made in Japan No Counterfeit – No China - No Delays – No Disappointments, Learn More

Transistor, NPN. Max voltage: 60V. Max current: 6Amp. Dissipation: 65 watt. Package: TO-220. P/N: TIP41A. Operating temperature: -65 to 150 Deg C. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 60V. Max current: 3Amp. Dissipation: 15 Watt. Package: 3 Leads, no tab. P/N: 2SB1172. Operating temperature: -55 to 150 Deg C. Application: Low frequency power amplification. Note: Silicon epitaxial planar. Learn More

Transistor, NPN. Max voltage: 30V. Max current: 20mA. Dissipation: 200mW. Package: TO-128-1. P/N: 2SC2360A. Note: Silicon RF. Learn More

Transistor, NPN. Max voltage: 50V. Max current: 150mA. Dissipation: 200mW. Package: TO-92 (C3193). P/N: 2SC3199. Note: Silicon epitaxial planar. Learn More

MAJOR - D45C3 - Transistor, PNP.  Package: TO-220. 

Type Designator: D45C3

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Package: TO-220. 

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