Transistors

Military Silicon NPN Transistor TO-3 steel new. 350V max breakdown voltage Colletor to Emitter, Base open. Manuf by IR for HP. Learn More

Transistor, P Channel mosfet. Voltage: 100V. Current: 1 Amp. Rds On: 0.6 Ohm. Package 4 Dip, maybe perfect pulls. Note: Rohs compliant. Learn More

Transistor, N-Channel power mosfet. Voltage: 400V. Current: 5.5 Amp. Dissipation: 75 watt. Rds (on): 1 Ohm. Operating temperature: -55 to 150 Deg C. Package: TO-3 (TO-204AA). Note: Military type JANTX. Learn More

International Rectifier - IR - IRF9521 Transistor, P Channel power FET.

Metal-Oxide Semiconductor

Max voltage: 60V.

Max current: 6Amp.

Operating Temp: 150 C

Package: TO-220AB.

Note: Enhancement mode vertical DMOS.

RDS on: 0.60 Ohm.

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Transistor, N Channel MOSFET. Max voltage: 500V. Max current: 2.5 Amp. Dissipation: 25 watt. Package: TO-205AF (formerly TO-39). P/N: JANTXV2N6802. Operating temperature: -55 to 150 Deg C. Note: Enhancemnet mode. RDS on 1.5 Ohm. Military - Aerospace JANTX type, NSN 5961-01-343-3642. High Voltage. Learn More

Transistor, N Channel mosfet. Max voltage: 200V. Max current: 2.25Amp. Package: TO-39 (TO-205AF). Derate >25 degC: Operating temperature: -55 to 175 Deg C. Military P/N: JANTX2N6784, NSN 5961-01-252-6143. Note: RDS on: 1.500 Ohm. Military packaged. Learn More

Transistor, N Channel FET. Package: TO-99-6. Note: Learn More

Transistor, N-Channel mosfet. Max voltage: 60Vdss. Max current: 72 Amp. Dissipation: 150 watt. Package: TO-220. RoHS compliant. Note: 12M Ohm. Learn More

IC. Transistor array. Voltage: 40VCEO, 50VCBO. 5 Current transistors with independent connections. Operating temperature: -40 to 85 Deg C. Package: 16 Dip. Note: A suffix = premium version.

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Transistors. 125W 1,000V High voltage MOS power N-channel FET. 1,000Vds Rds(on):4.2-ohm, max. Id:3.6A. Pd:125W. Package: Steel TO-3, TO-204AA. Learn More

IR - JANTX2N6796 Transistor, N-Channel MOSFET.

Voltage: 100V.

Current: 8Amp. Rds(On)=0.18 Ohm.

Dissipation: 25 watt.

Package: TO-39.

Note: Military JANTX.

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30A 60V 0.065-Ohm P-Channel Power Mosfet Transistors.Factory new TO-220

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)DPAK TO-252AA Learn More

IR - IRF840 - Transistor, NPN Channel FET.

Continuous Drain Current (ID): 8 A

Current Rating: 8 A

Drain to Source Breakdown Voltage: 500 V

Drain to Source Resistance: 850 mΩ

Gate to Source Voltage (Vgs): 20 V

Operating Temperature: -55 to 150 °C

Power Dissipation: 125 W

Rise Time: 23 ns

Voltage Rating (DC): 500 V

Case/Package: TO-220AB

 

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Transistor, Dual N and P MOSFET. Max voltage: 20V, -20V. Dissipation: 2 watt. Package: SMD SO-8. Note: Ultra low on resistance of 0.050-N and 0.090-P Ohms. Fast dv/dt 5V/nanosec. Learn More

Transistor Type:MOSFET, Transistor Polarity:N Channel,Continuous Drain Current, Id:2A, Package/Case:I-PAK, Power Dissipation, Pd:42W, Drain Source On Resistance @ 10V:4400m-ohm, Drain-Source Breakdown Voltage:600V, RoHS No Min purchase per line item $1.00 = 2/$1.00 Learn More

Transistor, N CH Mosfet (Hexfet). Max voltage: 400V. Max current: 3.1 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR320BTM. Note: RDS On: 1.8 Ohm. Learn More

Transistor, N CH Mosfet (Hexfet). Max voltage: 400V. Max current: 1.7 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR310TR. Note: RDS On: 3.6 Ohm. Learn More

Transistor, N CH Mosfet (Hexfet). Max voltage: 250V. Max current: 3.8 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR224TR. Note: RDS On: 1.1 Ohm. Learn More

Transistor, N CH Mosfet (Hexfet). Max voltage: 250V. Max current: 2.2 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR214TRBPF. Note: RDS On: 2.0 Ohm. Learn More

Transistor, N CH Mosfet (Hexfet). Max voltage: 250V. Max current: 2.2 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR214TF. Note: RDS On: 2.0 Ohm. Learn More

Transistor, N Channel mosfet. Max voltage: 800V. Max current: 4.1 Amp. Package: D2pak. P/N: IRFBE30SPBF. Learn More

Transistor, P CH Mosfet. Max voltage: 250V60V. Max current: 2.7 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR9214. Note: RDS On: 3.0 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 400V. Max current: 15 Amp. Dissipation: 150 watt. Package: TO-204AE (TO-3) steel. P/N: IRF352. Operating temperature: -55 to 150 Deg C. Note: RDS on: 0.4 Ohm. Learn More