Transistors

Transistor, N CH Mosfet (Hexfet). Max voltage: 100V. Max current: 7.7 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR120. Note: RDS On: 0.27 Ohm. Learn More

Transistor, Hexfet power MOSFET. Max voltage: 600V. Max current: 0.32Amp. Dissipation: 1 watt @ 25 Deg C. Package: HD-1 4 Pin Dip. P/N: IRFDC20. Operating temperature: -55 to 150 Deg C. Note: RDS on: 4.4 Ohm. Learn More

Transistor, N Channel FET. Max voltage: 60V. Max current: 75Amp. Dissipation: 140 watt. Package: TO-220. P/N: IRF1010E. Note: Hexfet. RDS on 8.5 mOhm. Learn More

Transistor, N Channel mosfet. Max voltage: 400V. Max current: 25Amp. Dissipation: 300 watt. Package: TO-3 steel (TO-204AA). P/N: IRF360. Note: RDS(on) 0.20 Ohm. Learn More

Transistor, N Channel Hexfet/Mosfet. Max voltage: 55V. Max current: 47Amp Tc at 25 Deg C, 33Amp Tc at 100 Deg C. Dissipation: 110 watt. Package: TO-220AB. P/N: IRLZ44N. Note: RDS on: 0.022 Ohm. Note: Factory new. Learn More

N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch TO-72/4 LEADS GOLD OBSOLETE Learn More

International Rectifier IR - IRLR024N - IR - IRLR024N - Transistor.

N Channel, 55Vdss

0.065 Ohm

17Amp, 45 watt.

Hexfet power mosfet, logic level gate drive.

Fast switching.

Fully Avalanche Rated.

Package: Dpak SMD.

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Transistor, Hexfet/Mosfet. Max voltage: 100V. Max current: 5.6Amp. Dissipation: 43 watt. Package: TO-220. P/N: IRL510. Note: RDS on 0.54 Ohm. Learn More

IR – International Rectifier - IRFZ48NS - Transistor, N-Channel MOSFET. Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Max voltage: 60Vdss. Max current: 72 Amp. Dissipation: 150 watt. Package: D2-Pak SMD/SMT. RoHS Compliant. Note: 12m Ohm. Learn More

Transistor, P Channel HEXFET. Max voltage: 200V. Max current: 0.4 Amp. Dissipation: 1 watt. Package: 4 Dip. P/N: IRFD9210. Operating temperature: -55 to 150 Deg C. Note: RDS on: 3 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 80V. Max current: 14Amp. Dissipation: 79 watt. Package: TO-220. P/N: IRF531. Operating temperature: -55 to 175 Deg C. Note: Enhancement mode silicon gate. RDS on: 0.16 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 200V. Max current: 16 Amp. Dissipation: 125 watt. Package: TO-204AE (TO-3) steel. P/N: IRF242. Note: RDS on: 0.22 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 500V. Max current: 14 Amp. Dissipation: 190 watt. Package: TO-247, Used, cut 1/2" leads. P/N: IRFP450. Operating temperature: -55 to 150 Deg C. Note: RDS on: 0.40 Ohm. Learn More

IR Infineon - JANTX2N6764 -Transistor, N-Channel Power MOSFET.

Status: Discontnued

Voltage: 100V.

Current: 38 Amp.

Power: 150 watt.

RDS (on): 0.55 Ohm.

Operating temperature: -55 to 150 Deg C.

Package: TO-3.

Note: Military type: JANTX.

Made in USA

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IR - IRFD9010 - Transistor, P Channel HEXFET.

Max voltage: 50V.

Max current: 1.1 Amp.

Dissipation: 1 watt.

Package: 4 Dip.

Operating temperature: -55 to 150 Deg C.

Note: RDS on: 0.5 Ohm.

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Transistor, N Channel Hexfet. Max voltage: 200V. Max current: 5.2Amp. Dissipation: 50 watt. Package: TO-220. New. P/N: IRF620. Note: Enhancement mode. RDS on: 0.8 Ohm. Learn More

Transistor, N Channel FET. Max voltage: 25V. Max current: 10Ma. Dissipation: 300Mw. Package: TO-72 gold leads. P/N: 2N5397. Note: High frequency amplifier. Learn More

Transistor, P Channel MOSFET. Max voltage: 100V. Max current: 19Amp. Dissipation: 180 watt. Package: TO-218. P/N: IRFP9140. Note: RDS on: 0.2 Ohm. Learn More

IR - IRF9540 Transistor, P Channel MOSFET.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Max voltage: 100V.

Max current: 19 Amp.

Dissipation: 125 watt.

Package: TO-220.

Operating temperature: -55 to 150 Deg C.

Note: RDS on: 0.2 Ohm.

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Transistor, military. Possibly a proprietary IRFP450. Specification sheet included has the Pinout as: D, S, G. Package: heavy TO-220 gold, hermetically sealed. Marked 13993-512538-001, BEO. Each with S/N. Learn More

Transistor, N CH Hexfet. Max voltage: 55V. Max current: 26Amp. Dissipation: 56 watt. Package: TO-220. P/N: IRFZ34. Note: RDS on: 0.040 Ohm. Hexfet, power mosfet. Learn More

Transistor, N Channel JFET. Voltage: -40V. Current: 10mAdc. Dissipation: 360mW. Operating temperature: -65 to 175 Deg C. Package: TO-18 gold leads. Learn More

Transistor, N CH Mosfet. Max voltage: 100V, VGS +/- 20V. Max current: 3.5 Amp. Dissipation: 15 watt. Package: TO-39 (TO-205AF). P/N: 2N6782. Operating temperature: -55 to 150 Deg C. Note: RDS on: 0.61 Ohm. Learn More

IR - IRFP250 Transistor, N Channel MOSFET.

Fifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applications.

Max voltage: 200V.

Max current: 30 Amp.

Dissipation: 190 watt.

Package: TO-247.

Operating temperature: -55 to 150 Deg C.

Note: RDS on: 0.085 Ohm.

Additional Data: http://www.irf.com/product-info/datasheets/data/irfp250.pdf

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