Transistors

Transistor, N Channel MOSFET. Max voltage: 450V. Max current: 1.6Amp. Dissipation: 20 watt @ 25 Deg C. Package: TO-205AF (low profileTO-39). P/N: IRFF421. Operating temperature: -55 to 150 Deg C. Note: High Voltage. Enhancement mode polysilicon-gate power MOS. RDS on: 3.0 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 150V. Max current: 5.5Amp. Dissipation: 25 watt @ 25 Deg C. Package: TO-205AF (low profileTO-39). P/N: IRFF231. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode polysilicon-gate power MOS. RDS on: 0.40 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 100V. Max current: 8Amp. Dissipation: 25 watt @ 25 Deg C. Package: TO-205AF (low profileTO-39). P/N: IRFF130. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon-gate power MOS. RDS on: 0.18 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 60VGS. Max current: 6Amp. Dissipation: 20 watt @ 25 Deg C. Package: TO-205AF (low profileTO-39). P/N: IRFF121. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon-gate power MOS. RDS on: 0.30 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 60V. Max current: 0.8 Amp. Dissipation: 1.2 watt. Package: 4 Dip. P/N: IRFD113. Derate >25 degC: 9.6mw/Deg C. Operating temperature: -55 to 150 Deg C. Note: RDS on: 0.8 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 200V. Max current: 16 Amp. Dissipation: 125 watt. Package: TO-204AE (TO-3) steel, Used/Removed from equipment, test dotted. P/N: IRF242. Note: RDS on: 0.22 Ohm. Learn More

Transistor, N Channel FET. Max voltage: -30V. Max current: 10mA. Dissipation: 300mW. Package: TO-72-4 metal. P/N: 2N4223. Operating temperature: -55 to 175 Deg C. Note: High frequency amplifier. Learn More

Transistor, Cool MOS. Max voltage: 650V. Max current: 11Amp. Dissipation: 125 watt. Package: D2PAK TO-263 SMD. P/N: SPB11N60C3. Note: RDS on: 0.38 Ohm.

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Transistor, Cool MOS. Max voltage: 650V. Max current: 4.5Amp. Dissipation: 50 watt. Package: DPAK TO-263 SMD. P/N: SPB04N60C3. Note: RDS on: 0.95 Ohm. Learn More

Interfet - 2N5911 - Transistor, N-Channel JFET.

The 2N5911 is a IC Chips with Dual N-Channel -25 V 40 mA JFET High Frequency Amplifier. Two Separate FETs within one package.

Status: Discontinued

Gate Source Voltage; -25V.

Dissipation: 500mw.

Drain-Source Current @ Vgs=0: 7ma to 40mA

Package: TO-99.

Note: Dual High Frequency Amplifier.

Gate-Source Cutoff Voltage Max; Vgs(off):-5V,

Operating Temperature Range: -55C to +150C.

New Old Stock - Rare

 

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Transistor, PNP. Voltage: 35VCEO, 50VCBO. Current: 150mA. Dissipation: 0.6 watt. Package: TO-5. Note: Silicon. Learn More

ID - 2N457B Transistor, PNP.

Max voltage: 30VCEO, 60VCBO.

Max current: 7 Amp.

Dissipation: 150 watt.

Package: TO-3 steel.

Note: Germanium, Power BJT.

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Transistor, N Channel MOSFET. Max voltage: 200V. Max current: 12 Amp. Dissipation: 75 watt. Package: TO-3 (TO-204AA). P/N: RFM8N20. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon gate. Logic level power field effect. RDS on 0.5 Ohm. Learn More

PNP Silicon 400.0 MAXIMUM BREAKOVER VOLTAGE, DC 5961-00-465-8359 TO-66 steel new military Manuf: HE? Learn More

Transistor, N Channel MOSFET. Max voltage: 60V. Max current: 17 Amp. Dissipation: 49 watt. Package: TO-252, 2 leads. P/N: RFD12N6LE. Operating temperature: -55 to 175 Deg C. Note: UltraFET. RDS on 0.071 Ohm. Learn More

Transistor, NPN. Max voltage: 8V. Max current: 300mA. Package: TO-72 gold leads. P/N: 1855-0022. Note: Silicon. Military 5961-004220500. Learn More

Transistor, PNP. Voltage: 8VCEO, 15VCBO. Current: 200mA. Dissipation: 150mW. Package: TO-18 gold leads. Note: Germanium. Hewlett Packard P/N: 1850-0102. Cross 2N2455. Military NSN 5961-00-764-3164. Learn More

Transistor, N Channel. Max voltage: 60V. Max current: 50 Amp. Dissipation: 131 watt. Package: TO-247. P/N: RFG50N06. Operating temperature: -55 to 175 Deg C. Note: RDS on: 0.022 Ohm. Learn More

8A 50V 0.300-Ohm P-Channel Power MOSFETsNEW 2-PIN SMD Learn More

HITACHI - 2SC535 - Transistor, NPN.

Max voltage: 20VCEO, 30VCBO.

Max current: 20mA.

Dissipation: 100mW.

Package: TO-92.

Operating and storage temperature: -55 to 150 Deg C.

Application: VHF amplifier, mixer, local oscillator.

Note: Silicon.

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Transistor, NPN. Max voltage: 50VCBO. Max current: 200mA. Dissipation: 750mW. Package: TO-92 type. P/N: 2SC114. Note: Silicon. Marked C114. Learn More

10Amp 500V Mosfet Transistor TO-218 New bulk.RFV10N50BE Intersil/Harris Learn More

Transistor, N Channel MOSFET. Max voltage: 50V. Max current: 75 Amp. Dissipation: 200 watt. Package: TO-218, cut and formed leads. P/N: RFH75N05E. Note: RDS on: 0.010 Ohm. Learn More

TO-39 GER PNP LO PWR TRANSI Learn More